AUIRF3205Z AUIRF3205ZS AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET 55V VDSS RDS(on) max. 6.5m ID (Silicon Limited) 110A ID (Package Limited) 75A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRF3205Z TO-220 G TO-220AB AUIRF3205Z D2Pak AUIRF3205ZS G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 D2-Pak AUIRF3205ZS S S D G Orderable Part Number AUIRF3205Z AUIRF3205ZS AUIRF3205ZSTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 78 75 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 440 170 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient ( PCB Mount, steady state) Units A W 1.1 20 180 250 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 175 C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.50 --- 0.90 --- 62 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-13 AUIRF3205Z/S Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 55 --- --- 2.0 71 --- --- --- --- Typ. --- 0.051 4.9 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 6.5 m VGS = 10V, ID = 66A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 66A 20 VDS = 55V, VGS = 0V A 250 VDS = 55V,VGS = 0V,TJ =125C 200 VGS = 20V nA -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 76 21 30 18 95 45 67 110 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Input Capacitance Output Capacitance --- 3450 --- --- 550 --- Crss Coss Coss Coss eff. Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- 310 --- --- 1940 --- --- 430 --- --- 640 --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 66A nC VDS = 44V VGS = 10V VDD = 28V ID = 66A ns RG= 6.8 VGS = 10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 44V = 1.0MHz VGS = 0V, VDS = 0V to 44V Min. Typ. Max. Units --- --- 75 --- --- 440 --- --- --- --- 28 25 1.3 42 38 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 66A,VGS = 0V ns TJ = 25C ,IF = 66A , VDD = 25V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 66A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 66A, VGS =10V. This is only applied to TO-220AB package. This is applied to D2 Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ of approximately 90C 2 2015-11-13 AUIRF3205Z/S 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 4.5V 20s PULSE WIDTH Tj = 25C 1 10 100 10 100 0.1 VDS , Drain-to-Source Voltage (V) 20s PULSE WIDTH Tj = 175C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 120 T J = 175C T J = 25C T J = 175C 100 10 VDS = 25V 20s PULSE WIDTH 1 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 Gfs, Forward Transconductance (S) ID , Drain-to-Source Current A) 1000 100 80 T J = 25C 60 40 20 VDS = 10V 20s PULSE WIDTH 0 0 11.0 20 40 60 80 100 ID, Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance vs. Drain Current 2015-11-13 AUIRF3205Z/S 6000 20 5000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd C, Capacitance (pF) Coss = Cds + Cgd 4000 Ciss 3000 2000 1000 Coss Crss 10 VDS = 44V VDS= 28V VDS= 11V 16 12 8 4 0 1 ID= 66A 0 100 0 20 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 80 100 120 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 T J = 175C 100.0 60 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 1000.0 100 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-toDrain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 40 QG Total Gate Charge (nC) 100sec 10 1 0.1 2.2 1msec Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-13 AUIRF3205Z/S 120 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.5 LIMITED BY PACKAGE ID , Drain Current (A) 100 80 60 40 20 0 ID = 66A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-13 AUIRF3205Z/S 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 350 ID TOP 300 BOTTOM 27A 47A 66A 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) VGS(th) Gate threshold Voltage (V) 4.0 ID = 250A 3.0 2.0 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Qgs1 Qgs2 Qgd Qgodr Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Waveform 6 2015-11-13 AUIRF3205Z/S 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 66A 160 120 80 40 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2015-11-13 AUIRF3205Z/S Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-11-13 AUIRF3205Z/S TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRF3205Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-13 AUIRF3205Z/S D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF3205ZS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-11-13 AUIRF3205Z/S D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2015-11-13 AUIRF3205Z/S Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220 Pak N/A D2-Pak MSL1 Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Class M4 (+/- 425V) AEC-Q101-002 Class H1C (+/- 2000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 11/13/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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