2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC (max) 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 * Hermetic packages UB Pin 4 in UB is connected to the metallic lid. Figure 1. Internal schematic diagram * ESCC and JANS qualified * European preferred part list EPPL Description The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N2907AUBx JANSR MIL-PRF19500/291 UB 100 krad - high and low dose rate - JANS2N2907AUBx JANS MIL-PRF19500/291 UB - - 2N2907ARUBx ESCC Flight 5202/001 UB 100 krad - low dose rate Target 2N2907AUBx ESCC Flight 5202/001 UB - Target SOC2907ARHRx ESCC Flight 5202/001 LCC-3 100 krad - low dose rate Yes SOC2907AHRx ESCC Flight 5202/001 LCC-3 - Yes 2N2907ARHRx ESCC Flight 5202/001 TO-18 100 krad - low dose rate - 2N2907AHRx ESCC Flight 5202/001 TO-18 - - December 2015 This is information on a product in full production. DocID15382 Rev 10 1/22 www.st.com Contents 2N2907AHR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 TO-18 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7 2/22 6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 DocID15382 Rev 10 2N2907AHR 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -60 V VEBO Emitter-base voltage (IC = 0) -5 V Collector current for TO-18 for LCC-3 and UB -0.6 -0.5 A A Total dissipation at Tamb 25 C ESCC: TO-18 LCC-3 and UB LCC-3 and UB (1) JANS: UB 0.4 0.4 0.73 0.5 W Total dissipation at Tcase 25 C ESCC: TO-18 1.8 IC PTOT Total dissipation at Tsp(IS) = 25 C JANS: UB Tstg Storage temperature TJ Max. operating junction temperature 1 -65 to 200 C 200 C 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 3. Thermal data Symbol RthJC RthJSP(IS) RthJA Parameter LCC-3 UB TO-18 Thermal resistance junction-case (max) for JANS - - Thermal resistance junction-case (max) for ESCC - 97 Thermal resistance junction-solder pad (infinite sink) (max) for JANS 90 - Thermal resistance junction-solder pad (infinite sink) (max) for ESCC - - Thermal resistance junction-ambient (max) for JANS 325 - Thermal resistance junction-ambient (max) for ESCC 437 240(1) 437 Unit C/W 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. DocID15382 Rev 10 3/22 22 Electrical characteristics 2 2N2907AHR Electrical characteristics(a) JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables. Tcase = 25 C unless otherwise specified. 2.1 JANS electrical characteristics Table 4. JANS electrical characteristics Symbol ICBO Parameter Test conditions Collector cut-off current (IE = 0) ICES Collector cut-off current (IE = 0) IEBO Emitter cut-off current (IC = 0) Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage VBE(sat) (1) Base-emitter saturation voltage hFE (1) hfe Typ. Max. Unit VCB = 60 V - 10 A VCB = 50 V - 10 nA VCB= 50 V, Tamb = 150 C - 10 A VCE = 50 V - 50 nA VEB = 5 V - 10 A VEB = 4 V - 50 nA IC = 10 mA 60 0.4 V IC = 500 mA, IB = 50 mA - 1.6 V - 1.3 V - 2.6 V 0.6 IC= 500 mA, IB= 50 mA Small signal current gain V - IC = 150 mA, IB = 15 mA DC current gain - IC = 150 mA, IB = 15 mA IC = 0.1 mA, VCE = 10 V 75 - IC = 1 mA, VCE = 10 V 100 - IC = 10 mA, VCE = 10 V 100 - IC = 150 mA, VCE = 10 V 100 - IC = 500 mA, VCE = 10 V 50 - IC = 10 mA, VCE = 10 V Tamb = -55 C 50 - VCE = 20 V f = 100 MHz 2 - 100 - IC = 20 mA VCE = 10 V, IC =1 mA f = 1 kHz a. For PNP type, voltage and current values are negative. 4/22 Min. DocID15382 Rev 10 450 300 2N2907AHR Electrical characteristics Table 4. JANS electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz f 1 MHz - 8 pF Cibo Output capacitance (IE = 0) VEB = 2 V 100 kHz f 1 MHz - 30 pF ton Turn-on time VCC = 30 V, IC = 150 mA IB1 = 15 mA - 45 ns toff Turn-off time VCC = 30 V, IC = 150 mA IB1 = -IB2 = 15 mA - 300 ns Typ. Max. Unit 10 10 nA A 1. Pulsed duration = 300 s, duty cycle 2% 2.2 ESCC electrical characteristics Table 5. ESCC electrical characteristics Symbol Parameter Test conditions Min. Collector cut-off current (IE = 0) VCB = 50 V, VCB = 50 V, Tamb = 150 C Collector-base breakdown voltage (IE = 0) IC = 10 A 60 V Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) IC = 10 mA 60 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 A 5 V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA, IB = 15 mA VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA, IB = 15 mA ICBO V(BR)CBO hFE (1) DC current gain 0.87 IC = 0.1 mA, VCE = 10 V 75 IC = 10 mA, VCE = 10 V 100 IC = 150 mA, VCE = 10 V 100 IC = 500 mA, VCE = 10 V 50 2 hfe Small signal current gain VCE = 20 V, IC = 20 mA f = 100 MHz Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz f 1 MHz DocID15382 Rev 10 0.4 V 1.3 V 300 8 pF 5/22 22 Electrical characteristics 2N2907AHR Table 5. ESCC electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit ton Turn-on time VCC = 30 V, IC = 150 mA IB1 = 15 mA 45 ns toff Turn-off time VCC = 30 V, IC = 150 mA IB1 = -IB2 = 15 mA 300 ns 1. Pulsed duration = 300 s, duty cycle 2 % 2.3 Electrical characteristics (curves) Figure 2. Safe operating area for TO-18 ,& $ Figure 3. Safe operating area for LCC-3 ,& $ ,*%7)62$ ,*%7)62$ V V PV PV V '& '& V 9&( 9 Figure 4. DC current gain (VCE = 1 V) 9&( 9 Figure 5. DC current gain (VCE = 10 V) $0Y 6/22 DocID15382 Rev 10 $0Y 2N2907AHR Electrical characteristics Figure 6. Collector emitter saturation voltage Figure 7. Base emitter saturation voltage (hFE = 10) $0Y 2.4 $0Y Test circuits Figure 8. JANS saturated turn-on switching time test circuit NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin 100 K ohms, Cin 12 pF, rise time 5 ns. DocID15382 Rev 10 7/22 22 Electrical characteristics 2N2907AHR Figure 9. JANS saturated turn-off switching time test circuit NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin 100 K ohms, Cin 12 pF, rise time 5 ns. Figure 10. ESCC resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 8/22 DocID15382 Rev 10 2N2907AHR 3 Radiation hardness assurance Radiation hardness assurance The products guaranteed in radiation within the JANS system fully comply with the MILPRF-19500/291 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5202/001 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N2907AHR series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s, identical to the ESCC 100 krad guarantee. It is supported with the same Radiation Verification Test report provided with each shipment. A brief summary of the standard High Dose Rate by wafer lot JANSR guarantee is provided below: - All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-STD-750 for total Ionizing dose. The table below provides for each monitored parameters of the test conditions and the acceptance criteria Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Value Symbol Parameter Test conditions Unit Min. Max. ICBO Collector to base cutoff current VCB = 60 20 A VCB = 50 V 20 nA IEBO Emitter to base cutoff current VEB = 5 V 20 A VEB = 4 V 100 nA V(BR)CEO Breakdown voltage, collector to emitter IC = 10 mA ICES Collector to emitter cutoff current VCE = 50 V hFE Forward-current transfer ratio 60 V 100 VCE = 10 V; IC = 0.1 mA [37.5](1) VCE = 10 V; IC = 1.0 mA [50](1) VCE = 10 V; IC = 10 mA [50](1) VCE = 10 V; IC = 150 mA [50](1) VCE = 10 V; IC = 500 mA (1) 400 300 [25] VCE(sat) Collector-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.46 IC = 500 mA; IB = 50 mA 1.84 VBE(sat) Base-emitter saturation voltage IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA DocID15382 Rev 10 nA 0.6 1.5 3 V V 9/22 22 Radiation hardness assurance 2N2907AHR 1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: - Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept for reference - Irradiation at 0.1 rad (Si)/s - Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 8. Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100C. Table 7. Radiation summary Radiation test 100 krad ESCC Wafer test each Part tested 5 biased + 5 unbiased Dose rate 0.1 rad/s Acceptance MIL-STD-750 method 1019 Displacement damage Optional Agency part number (ex) 5202/001/04R (1) ST part number (ex) SOC2N2907ARHRG Documents CoC + RVT 1. Example of the 2N2907A in LCC-3 Gold finish. 10/22 DocID15382 Rev 10 2N2907AHR Radiation hardness assurance Table 8. ESCC 5202/001R post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 50 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 3 V - 10 nA Collector-base breakdown voltage (IE = 0) IC = 10 A 60 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 10 mA 60 - V V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 A 5 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA - 0.4 V VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA - 1.3 V Post irradiation gain calculation (2) IC = 0.1 mA IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) [37.5] [50] [100] [25] - 300 1. Pulsed duration = 300 s, duty cycle 2% 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DocID15382 Rev 10 11/22 22 Package mechanical data 4 2N2907AHR Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 9. Product mass summary 4.1 Package Mass (g) UB 0.06 LCC-3 0.06 TO-18 0.40 UB package information Figure 11. UB package outline 12/22 DocID15382 Rev 10 2N2907AHR Package mechanical data Table 10. UB mechanical data mm. Dim. Min. Typ. Max. A 1.16 1.42 C 0.46 0.51 0.56 D 0.56 0.76 0.96 E 0.92 1.02 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.18 I 2.41 2.54 2.67 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.41 0.51 0.61 M 2.46 2.54 2.62 N 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56 DocID15382 Rev 10 13/22 22 Package mechanical data 4.2 2N2907AHR LCC-3 package information Figure 12. LCC-3 package outline 1 2 3 14/22 DocID15382 Rev 10 2N2907AHR Package mechanical data Table 11. LCC-3 mechanical data mm. Dim. Min. Typ. Max. A 1.16 C 0.45 0.50 0.56 D 0.60 0.76 0.91 E 0.91 1.01 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.17 I 2.41 2.54 2.66 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.40 0.50 0.60 M 2.46 2.54 2.62 N 1.80 1.90 2.00 R 1.42 0.30 DocID15382 Rev 10 15/22 22 Package mechanical data 4.3 2N2907AHR TO-18 package information Figure 13. TO-18 package outline ) ( ' & $ % / * , + B5(9 16/22 DocID15382 Rev 10 2N2907AHR Package mechanical data Table 12. TO-18 mechanical data mm. Dim. Min. Typ. Max. A 12.70 13.20 14.20 B 0.41 0.45 0.48 C 0.36 0.47 D 4.88 5.33 E 4.63 4.70 F 5.31 5.45 G 2.49 2.54 2.59 H 0.80 0.90 1.00 I 0.95 1.00 1.05 L 42 45 48 DocID15382 Rev 10 17/22 22 Order codes 18/22 5 Order codes Table 13. Ordering information DocID15382 Rev 10 Agency specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing J2N2907AUB1 - - Engineering Model JANS - UB Gold J2907AUB1 Waffle Pack 2N2907AUB1 - - Engineering Model ESCC - UB Gold 2N2907AUB1 Waffle Pack SOC2907A1 - - Engineering Model ESCC - LCC-3 Gold SOC2907A1 Waffle Pack 2N2907A1 - - Engineering Model ESCC - TO-18 Solder Dip 2N2907A1 Strip Pack JANSR2N2907AUBG MIL-PRF19500/291 - JANSR 100krad - high and low dose rate UB Gold JSR2907 Waffle Pack JANSR2N2907AUBT MIL-PRF19500/291 - JANSR 100krad - high and low dose rate UB Solder Dip JSR2907 Waffle Pack JANS2N2907AUBG MIL-PRF19500/291 - JANS - UB Gold JS2907 Waffle Pack JANS2N2907AUBT MIL-PRF19500/291 - JANS - UB Solder Dip JS2907 Waffle Pack 2N2907ARUBG 5202/001/06R Target ESCC Flight 100krad - low dose rate UB Gold 520200106R Waffle Pack 2N2907ARUBT 5202/001/07R Target ESCC Flight 100krad - low dose rate UB Solder Dip 520200107R Waffle Pack 2N2907AUBG 5202/001/06 Target ESCC Flight - UB Gold 520200106 Waffle Pack 2N2907AUBT 5202/001/07 Target ESCC Flight - UB Solder Dip 520200107 Waffle Pack SOC2907ARHRG 5202/001/04R Yes ESCC Flight 100krad - low dose rate LCC-3 Gold 520200104R Waffle Pack SOC2907ARHRT 5202/001/05R Yes ESCC Flight 100krad - low dose rate LCC-3 Solder Dip 520200105R Waffle Pack SOC2907AHRG 5202/001/04 Yes ESCC Flight - LCC-3 Gold 520200104 Waffle Pack 2N2907AHR CPN CPN Agency specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing SOC2907AHRT 5202/001/05 Yes ESCC Flight - LCC-3 Solder Dip 520200105 Waffle Pack 2N2907ARHRG 5202/001/01R - ESCC Flight 100krad - low dose rate TO-18 Gold 520200101R Strip Pack 2N2907ARHRT 5202/001/02R - ESCC Flight 100krad - low dose rate TO-18 Solder Dip 520200102R Strip Pack 2N2907AHRG 5202/001/01 - ESCC Flight - TO-18 Gold 520200101 Strip Pack 2N2907AHRT 5202/001/02 - ESCC Flight - TO-18 Solder Dip 520200102 Strip Pack 2N2907AHR Table 13. Ordering information 1. High dose rate as per MIL-PRF-19500 specification group D, subgroup 2 inspection. Low dose rate as per ESCC specification 22900. 2. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts: ST logo, date code, country of origin (FR), manufacturer code (CSTM), serail number of the part within the assembly lot. DocID15382 Rev 10 Contact ST sales office for information about the specific conditions for: - Products in die form - Other JANS quality levels - Tape and reel packing Order codes 19/22 Shipping details 2N2907AHR 6 Shipping details 6.1 Date code Date code xyywwz is structured as below table: Table 14. Date code x 6.2 EM (ESCC & JANS) 3 ESCC FLIGHT - JANS FLIGHT (diffused in Singapore) W yy ww z last two digits of the year week digits lot index in the week Documentation Table 15. Documentation provided for each type of product 20/22 Quality level Radiation level Documentation Engineering model - - JANS Flight - Certificate of conformance JANS Flight 100 krad ESCC Flight - ESCC Flight 100 krad Certificate of conformance 50 rad/s radiation verification test report Certificate of conformance Certificate of conformance 0.1 rad/s radiation verification test report DocID15382 Rev 10 2N2907AHR 7 Revision history Revision history Table 16. Document revision history Date Revision Changes 09-Feb-2009 1 Initial release 05-Jan-2010 2 Modified Table 1: Device summary 30-Nov-2011 3 Minor text changes in the document title and description on the coverpage New package inserted (UB). Updated: 14-May-2012 4 - Table 1: Device summary, Table 2: Absolute maximum ratings and Table 3: Thermal data. - Section 2: Electrical characteristics and Section 4: Package mechanical data. Added: - Section : and Section 6: Shipping details. Added: 03-Jun-2013 5 18-Sep-2013 6 05-May-2014 7 - New section Radiation hardness assurance - Corrected the revision number and dates of revision 3 Updated Table 1: Device summary and Table 13: Ordering information Updated Table 1: Device summary, Table 13: Ordering information and Section 3: Radiation hardness assurance. Added Figure 2: Safe operating area for TO-18 and Figure 3: Safe operating area for LCC-3 29-May-2014 8 21-Aug-2015 9 02-Dec-2015 10 Added note 1 in Table 13: Ordering information. Modified: Section 4.3: TO-18 package information Minor text changes Updated Figure 2.: Safe operating area for TO-18 and Figure 3.: Safe operating area for LCC-3. Minor text chages. DocID15382 Rev 10 21/22 22 2N2907AHR IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved 22/22 DocID15382 Rev 10