This is information on a product in full production.
December 2015 DocID15382 Rev 10 1/22
2N2907AHR
Hi-Rel 60 V, 0.6 A PNP transistor
Datasheet - production data
Figure 1. Internal schematic diagram
Features
•Hermetic packages
•ESCC and JANS qualified
•European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
TO-18
LCC-3
3
1
2
3
1
2
3
1
2
4
Pin 4 in UB is connected to the metallic lid.
UB
Parameter Value
BVCEO 60 V
IC (max) 0.6 A
HFE at 10 V - 150 mA > 100
Table 1. Device summary
Device Qualification
system
Agency
specification Package Radiation level EPPL
JANSR2N2907AUBx JANSR MIL-PRF-
19500/291 UB 100 krad - high and low
dose rate -
JANS2N2907AUBx JANS MIL-PRF-
19500/291 UB - -
2N2907ARUBx ESCC Flight 5202/001 UB 100 krad - low dose rate Target
2N2907AUBx ESCC Flight 5202/001 UB - Target
SOC2907ARHRx ESCC Flight 5202/001 LCC-3 100 krad - low dose rate Yes
SOC2907AHRx ESCC Flight 5202/001 LCC-3 - Yes
2N2907ARHRx ESCC Flight 5202/001 TO-18 100 krad - low dose rate -
2N2907AHRx ESCC Flight 5202/001 TO-18 - -
www.st.com
Contents 2N2907AHR
2/22 DocID15382 Rev 10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 UB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 LCC-3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-18 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DocID15382 Rev 10 3/22
2N2907AHR Electrical ratings
22
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -60 V
VCEO Collector-emitter voltage (IB = 0) -60 V
VEBO Emitter-base voltage (IC = 0) -5 V
IC
Collector current
for TO-18
for LCC-3 and UB
-0.6
-0.5
A
A
PTOT
Total dissipation at Tamb ≤ 25 °C
ESCC: TO-18
LCC-3 and UB
LCC-3 and UB (1)
JANS: UB
Total dissipation at Tcase ≤ 25 °C
ESCC: TO-18
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
0.4
0.4
0.73
0.5
1.8
W
Total dissipation at Tsp(IS) = 25 °C
JANS: UB 1
Tstg Storage temperature -65 to 200 °C
TJMax. operating junction temperature 200 °C
Table 3. Thermal data
Symbol Parameter LCC-3
UB TO-18 Unit
RthJC
Thermal resistance junction-case (max) for JANS - -
°C/W
Thermal resistance junction-case (max) for
ESCC -97
RthJSP(IS)
Thermal resistance junction-solder pad (infinite
sink) (max) for JANS 90 -
Thermal resistance junction-solder pad (infinite
sink) (max) for ESCC --
RthJA
Thermal resistance junction-ambient (max) for
JANS 325 -
Thermal resistance junction-ambient (max) for
ESCC
437
240(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
437
Electrical characteristics 2N2907AHR
4/22 DocID15382 Rev 10
2 Electrical characteristics(a)
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provided in dedicated tables.
Tcase = 25 °C unless otherwise specified.
2.1 JANS electrical characteristics
a. For PNP type, voltage and current values are negative.
Table 4. JANS electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 60 V - 10 µA
VCB = 50 V - 10 nA
VCB= 50 V, Tamb = 150 °C - 10 µA
ICES
Collector cut-off
current
(IE = 0)
VCE = 50 V - 50 nA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V - 10 µA
VEB = 4 V - 50 nA
V(BR)CEO (1)
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA 60 - V
VCE(sat) (1) Collector-emitter
saturation voltage
IC = 150 mA, IB = 15 mA - 0.4 V
IC = 500 mA, IB = 50 mA - 1.6 V
VBE(sat) (1) Base-emitter
saturation voltage
IC = 150 mA, IB = 15 mA 0.6 - 1.3 V
IC= 500 mA, IB= 50 mA - 2.6 V
hFE (1) DC current gain
IC = 0.1 mA, VCE = 10 V 75 -
IC = 1 mA, VCE = 10 V 100 - 450
IC = 10 mA, VCE = 10 V 100 -
IC = 150 mA, VCE = 10 V 100 - 300
IC = 500 mA, VCE = 10 V 50 -
IC = 10 mA, VCE = 10 V
Tamb = -55 °C 50 -
hfe
Small signal current
gain
VCE = 20 V IC = 20 mA
f = 100 MHz 2-
VCE = 10 V, IC =1 mA f = 1 kHz 100 -
DocID15382 Rev 10 5/22
2N2907AHR Electrical characteristics
22
2.2 ESCC electrical characteristics
Cobo
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz ≤ f ≤ 1 MHz -8pF
Cibo
Output capacitance
(IE = 0)
VEB = 2 V
100 kHz ≤ f ≤ 1 MHz -30pF
ton Turn-on time VCC = 30 V, IC = 150 mA
IB1 = 15 mA -45ns
toff Turn-off time VCC = 30 V, IC = 150 mA
IB1 = -IB2 = 15 mA - 300 ns
1. Pulsed duration = 300 µs, duty cycle ≤ 2%
Table 4. JANS electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Table 5. ESCC electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 50 V,
VCB = 50 V, Tamb = 150 °C
10
10
nA
µA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 10 µA 60 V
V(BR)CEO (1)
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA 60 V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 µA 5 V
VCE(sat) (1) Collector-emitter
saturation voltage IC = 150 mA, IB = 15 mA 0.4 V
VBE(sat) (1) Base-emitter
saturation voltage IC = 150 mA, IB = 15 mA 0.87 1.3 V
hFE (1) DC current gain
IC = 0.1 mA, VCE = 10 V 75
IC = 10 mA, VCE = 10 V 100
IC = 150 mA, VCE = 10 V 100 300
IC = 500 mA, VCE = 10 V 50
hfe
Small signal current
gain
VCE = 20 V, IC = 20 mA
f = 100 MHz 2
Cobo
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz ≤ f ≤ 1 MHz 8pF
Electrical characteristics 2N2907AHR
6/22 DocID15382 Rev 10
2.3 Electrical characteristics (curves)
ton Turn-on time VCC = 30 V, IC = 150 mA
IB1 = 15 mA 45 ns
toff Turn-off time VCC = 30 V, IC = 150 mA
IB1 = -IB2 = 15 mA 300 ns
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
Table 5. ESCC electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Figure 2. Safe operating area for TO-18 Figure 3. Safe operating area for LCC-3
Figure 4. DC current gain (VCE = 1 V) Figure 5. DC current gain (VCE = 10 V)
,*%7)62$
,&
$
9&(9
'&
PV
ȝV
ȝV
,*%7)62$
,&
$
9&(9
'&
ȝV
PV
ȝV
$0Y
$0Y
DocID15382 Rev 10 7/22
2N2907AHR Electrical characteristics
22
2.4 Test circuits
Figure 8. JANS saturated turn-on switching time test circuit
Figure 6. Collector emitter saturation
voltage
Figure 7. Base emitter saturation voltage
(hFE = 10)
$0Y
$0Y
NOTES:
1. The rise time (t
r
) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Z
in
≥ 100 K ohms, C
in
≤ 12 pF, rise time ≤ 5 ns.
Electrical characteristics 2N2907AHR
8/22 DocID15382 Rev 10
Figure 9. JANS saturated turn-off switching time test circuit
Figure 10. ESCC resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the generator
source impedance shall be 50 ohms.
2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ 5 ns.
DocID15382 Rev 10 9/22
2N2907AHR Radiation hardness assurance
22
3 Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/291 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5202/001 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. On top of the standard JANSR high dose rate by wafer lot guarantee, ST 2N2907AHR
series include an additional wafer by wafer 100 krad Low dose rate guarantee at 0.1 rad/s,
identical to the ESCC 100 krad guarantee. It is supported with the same Radiation
Verification Test report provided with each shipment. A brief summary of the standard High
Dose Rate by wafer lot JANSR guarantee is provided below:
– All test are performed in accordance to MIL-PRF-19500 and test method 1019 of
MIL-STD-750 for total Ionizing dose.
The table below provides for each monitored parameters of the test conditions and the
acceptance criteria
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics
Symbol Parameter Test conditions
Value
Unit
Min. Max.
ICBO
Collector to base
cutoff current
VCB = 60 20 µA
VCB = 50 V 20 nA
IEBO
Emitter to base
cutoff current
VEB = 5 V 20 µA
VEB = 4 V 100 nA
V(BR)CEO
Breakdown voltage,
collector to emitter IC = 10 mA 60 V
ICES
Collector to emitter
cutoff current VCE = 50 V 100 nA
hFE Forward-current
transfer ratio
VCE = 10 V; IC = 0.1 mA [37.5](1)
VCE = 10 V; IC = 1.0 mA [50](1) 400
VCE = 10 V; IC = 10 mA [50](1)
VCE = 10 V; IC = 150 mA [50](1) 300
VCE = 10 V; IC = 500 mA [25](1)
VCE(sat)
Collector-emitter
saturation voltage
IC = 150 mA; IB = 15 mA 0.46
V
IC = 500 mA; IB = 50 mA 1.84
VBE(sat)
Base-emitter
saturation voltage
IC = 150 mA; IB = 15 mA 0.6 1.5
V
IC = 500 mA; IB = 50 mA 3
Radiation hardness assurance 2N2907AHR
10/22 DocID15382 Rev 10
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
ST goes beyond the ESCC specification by performing the following procedure:
– Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1
kept for reference
– Irradiation at 0.1 rad (Si)/s
– Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10
samples comply with the post radiation electrical characteristics provided in
Table 8.
Delivery together with the parts of the radiation verification test (RVT) report of the particular
wafer used to manufacture the products. This RVT includes the value of each parameter at
30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an
additional 168 hour annealing at 100°C.
1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the
pre- and Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The
[hFE] value can never exceed the pre-radiation minimum hFE that it is based upon.
Table 7. Radiation summary
Radiation test 100 krad ESCC
Wafer test each
Part tested 5 biased + 5 unbiased
Dose rate 0.1 rad/s
Acceptance MIL-STD-750 method 1019
Displacement damage Optional
Agency part number (ex) 5202/001/04R (1)
1. Example of the 2N2907A in LCC-3 Gold finish.
ST part number (ex) SOC2N2907ARHRG
Documents CoC + RVT
DocID15382 Rev 10 11/22
2N2907AHR Radiation hardness assurance
22
Table 8. ESCC 5202/001R post radiation electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICBO
Collector cut-off
current (IE = 0) VCB = 50 V - 10 nA
IEBO
Emitter cut-off current
(IC = 0) VEB = 3 V - 10 nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 10 µA 60 - V
V(BR)CEO(1)
1. Pulsed duration = 300 µs, duty cycle ≤ 2%
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA 60 - V
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 10 µA 5 - V
VCE(sat) (1) Collector-emitter
saturation voltage IC = 150 mA IB = 15 mA - 0.4 V
VBE(sat) (1) Base-emitter
saturation voltage IC = 150 mA IB = 15 mA - 1.3 V
[hFE] (1) Post irradiation gain
calculation (2)
2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
IC = 0.1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
IC = 150 mA VCE = 10 V
IC = 500 mA VCE = 10 V
[37.5]
[50]
[100]
[25]
-300
Package mechanical data 2N2907AHR
12/22 DocID15382 Rev 10
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 UB package information
Figure 11. UB package outline
Table 9. Product mass summary
Package Mass (g)
UB 0.06
LCC-3 0.06
TO-18 0.40
DocID15382 Rev 10 13/22
2N2907AHR Package mechanical data
22
Table 10. UB mechanical data
Dim.
mm.
Min. Typ. Max.
A 1.16 1.42
C 0.46 0.51 0.56
D 0.56 0.76 0.96
E 0.92 1.02 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.18
I 2.41 2.54 2.67
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.41 0.51 0.61
M 2.46 2.54 2.62
N 1.81 1.91 2.01
r 0.20
r1 0.30
r2 0.56
Package mechanical data 2N2907AHR
14/22 DocID15382 Rev 10
4.2 LCC-3 package information
Figure 12. LCC-3 package outline
21
3
DocID15382 Rev 10 15/22
2N2907AHR Package mechanical data
22
Table 11. LCC-3 mechanical data
Dim.
mm.
Min. Typ. Max.
A 1.16 1.42
C 0.45 0.50 0.56
D 0.60 0.76 0.91
E 0.91 1.01 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.17
I 2.41 2.54 2.66
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.40 0.50 0.60
M 2.46 2.54 2.62
N 1.80 1.90 2.00
R 0.30
Package mechanical data 2N2907AHR
16/22 DocID15382 Rev 10
4.3 TO-18 package information
Figure 13. TO-18 package outline
B5(9
*
+
,
/
&
'
$
)
(
%
DocID15382 Rev 10 17/22
2N2907AHR Package mechanical data
22
Table 12. TO-18 mechanical data
Dim.
mm.
Min. Typ. Max.
A 12.70 13.20 14.20
B 0.41 0.45 0.48
C 0.36 0.47
D 4.88 5.33
E 4.63 4.70
F 5.31 5.45
G 2.49 2.54 2.59
H 0.80 0.90 1.00
I 0.95 1.00 1.05
L 42° 45° 48°
Order codes 2N2907AHR
18/22 DocID15382 Rev 10
5 Order codes
Table 13. Ordering information
CPN Agency
specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing
J2N2907AUB1 - - Engineering
Model JANS - UB Gold J2907AUB1 Waffle Pack
2N2907AUB1 - - Engineering
Model ESCC - UB Gold 2N2907AUB1 Waffle Pack
SOC2907A1 - - Engineering
Model ESCC - LCC-3 Gold SOC2907A1 Waffle Pack
2N2907A1 - - Engineering
Model ESCC - TO-18 Solder Dip 2N2907A1 Strip Pack
JANSR2N2907AUBG MIL-PRF-
19500/291 - JANSR 100krad - high and low
dose rate UB Gold JSR2907 Waffle Pack
JANSR2N2907AUBT MIL-PRF-
19500/291 - JANSR 100krad - high and low
dose rate UB Solder Dip JSR2907 Waffle Pack
JANS2N2907AUBG MIL-PRF-
19500/291 - JANS - UB Gold JS2907 Waffle Pack
JANS2N2907AUBT MIL-PRF-
19500/291 - JANS - UB Solder Dip JS2907 Waffle Pack
2N2907ARUBG 5202/001/06R Target ESCC Flight 100krad - low dose rate UB Gold 520200106R Waffle Pack
2N2907ARUBT 5202/001/07R Target ESCC Flight 100krad - low dose rate UB Solder Dip 520200107R Waffle Pack
2N2907AUBG 5202/001/06 Target ESCC Flight - UB Gold 520200106 Waffle Pack
2N2907AUBT 5202/001/07 Target ESCC Flight - UB Solder Dip 520200107 Waffle Pack
SOC2907ARHRG 5202/001/04R Yes ESCC Flight 100krad - low dose rate LCC-3 Gold 520200104R Waffle Pack
SOC2907ARHRT 5202/001/05R Yes ESCC Flight 100krad - low dose rate LCC-3 Solder Dip 520200105R Waffle Pack
SOC2907AHRG 5202/001/04 Yes ESCC Flight - LCC-3 Gold 520200104 Waffle Pack
2N2907AHR Order codes
DocID15382 Rev 10 19/22
Contact ST sales office for information about the specific conditions for:
– Products in die form
– Other JANS quality levels
– Tape and reel packing
SOC2907AHRT 5202/001/05 Yes ESCC Flight - LCC-3 Solder Dip 520200105 Waffle Pack
2N2907ARHRG 5202/001/01R - ESCC Flight 100krad - low dose rate TO-18 Gold 520200101R Strip Pack
2N2907ARHRT 5202/001/02R - ESCC Flight 100krad - low dose rate TO-18 Solder Dip 520200102R Strip Pack
2N2907AHRG 5202/001/01 - ESCC Flight - TO-18 Gold 520200101 Strip Pack
2N2907AHRT 5202/001/02 - ESCC Flight - TO-18 Solder Dip 520200102 Strip Pack
1. High dose rate as per MIL-PRF-19500 specification group D, subgroup 2 inspection. Low dose rate as per ESCC specification 22900.
2. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date
code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts: ST logo, date code, country of origin (FR), manufacturer
code (CSTM), serail number of the part within the assembly lot.
Table 13. Ordering information
CPN Agency
specification EPPL Quality level Radiation level(1) Package Lead finish Marking(2) Packing
Shipping details 2N2907AHR
20/22 DocID15382 Rev 10
6 Shipping details
6.1 Date code
Date code xyywwz is structured as below table:
6.2 Documentation
Table 14. Date code
xyywwz
E M
(ESCC & JANS) 3
last two digits of
the year week digits lot index in the
week
E SC C
FLIGHT -
J A N S
F L I G H T
(diffused in
Singapore)
W
Table 15. Documentation provided for each type of product
Quality level Radiation level Documentation
Engineering model - -
JANS Flight - Certificate of conformance
JANS Flight 100 krad Certificate of conformance
50 rad/s radiation verification test report
ESCC Flight - Certificate of conformance
ESCC Flight 100 krad Certificate of conformance
0.1 rad/s radiation verification test report
DocID15382 Rev 10 21/22
2N2907AHR Revision history
22
7 Revision history
Table 16. Document revision history
Date Revision Changes
09-Feb-2009 1 Initial release
05-Jan-2010 2 Modified Table 1: Device summary
30-Nov-2011 3 Minor text changes in the document title and description on the
coverpage
14-May-2012 4
New package inserted (UB).
Updated:
–Table 1: Device summary, Table 2: Absolute maximum ratings and
Table 3: Thermal data.
–Section 2: Electrical characteristics and Section 4: Package
mechanical data.
Added:
–Section : and Section 6: Shipping details.
03-Jun-2013 5
Added:
– New section Radiation hardness assurance
– Corrected the revision number and dates of revision 3
18-Sep-2013 6 Updated Table 1: Device summary and Table 13: Ordering
information
05-May-2014 7
Updated Table 1: Device summary, Table 13: Ordering information
and Section 3: Radiation hardness assurance.
Added Figure 2: Safe operating area for TO-18 and Figure 3: Safe
operating area for LCC-3
29-May-2014 8 Added note 1 in Table 13: Ordering information.
21-Aug-2015 9
Modified: Section 4.3: TO-18 package information
Minor text changes
02-Dec-2015 10
Updated Figure 2.: Safe operating area for TO-18 and Figure
3.: Safe operating area for LCC-3.
Minor text chages.
2N2907AHR
22/22 DocID15382 Rev 10
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
