BC857CTRL13 - NXP - Datasheet.Directory

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 Apr 12 2002 Feb 04

DISCRETE SEMICONDUCTORS

BC856; BC857; BC858

PNP general purpose transistors

ook, halfpage

M3D088

2002 Feb 04 2

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complements: BC846, BC847 and BC848.

MARKING

Note

1. * = -: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

BC856 3D*

BC856A 3A*

BC856B 3B*

BC857 3H*

BC857A 3E*

BC857B 3F*

BC857C 3G*

BC858B 3K*

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM256

Top view

Fig.1 Simplified outline (SOT23) and symbol.

2002 Feb 04 3

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC856 −−80 V

BC857 −−50 V

BC858 −−30 V

VCEO collector-emitter voltage open base

BC856 −−65 V

BC857 −−45 V

BC858 −−30 V

VEBO emitter-base voltage open collector −−5V

Ccollector current (DC) −−100 mA

ICM peak collector current −−200 mA

IBM peak base current −−200 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note 1 500 K/W

2002 Feb 04 4

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

CHARACTERISTICS

Tamb =25°C; unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =−30 V; IE=0 −−1−15 nA

VCB =−30 V; IE=0;

j= 150 °C−−−4µA

EBO emitter-base cut-off current VEB =−5 V; IC=0 −−−100 nA

hFE DC current gain IC=−2 mA; VCE =−5V

BC856 125 −475

BC857 125 −800

BC856A; BC857A 125 −250

BC856B; BC857B; BC858B 220 −475

BC857C 420 −800

VCEsat collector-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−75 −300 mV

IC=−100 mA; IB=−5 mA;

note 1 −−250 −650 mV

VBEsat base-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−700 −mV

IC=−100 mA; IB=−5 mA;

note 1 −−850 −mV

VBE base-emitter voltage IC=−2 mA; VCE =−5V −600 −650 −750 mV

IC=−10 mA; VCE =−5V −−−820 mV

Cccollector capacitance VCB =−10 V; IE=I

e=0;

f = 1 MHz −4.5 −pF

fTtransition frequency VCE =−5 V; IC=−10 mA;

f = 100 MHz 100 −−MHz

F noise ﬁgure IC=−200 µA; VCE =−5V;

S=2kΩ; f = 1 kHz;

B = 200 Hz

−210dB

2002 Feb 04 5

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

handbook, halfpage

200

300

400

500

hFE

100

MGT711

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

BC857A; VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT712

−10−2−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

BC857A; VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT713

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857A; IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT714

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

BC857A; IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Feb 04 6

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

handbook, halfpage

400

600

800

1000

hFE

200

MGT715

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.6 DC current gain as a function of collector

current; typical values.

BC857B; VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT716

−10−2−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

BC857B; VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT717

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857B; IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT718

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

BC857B; IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Feb 04 7

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

handbook, halfpage

400

600

800

1000

hFE

200

MGT719

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.10 DC current gain as a function of collector

current; typical values.

BC857C; VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT720

−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

BC857C; VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT721

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857C; IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT722

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

BC857C; IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2002 Feb 04 8

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

2002 Feb 04 9

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2002 Feb 04 10

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

NOTES

2002 Feb 04 11

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC856; BC857; BC858

NOTES

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Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09167