MITSUBISHI Nch POWER MOSFET ARY FS10KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS10KMA-4A OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 2.6 0.2 10V DRIVE VDSS ............................................................................... 200V rDS (ON) (MAX) ............................................................. 0.52 ID ......................................................................................... 10A 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 GATE DRAIN SOURCE TO-220FN APPLICATION CS Switch for CRT Display monitor, Switch mode power supply, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage VGS = 0V 200 V VGSS ID IDM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V 20 10 30 V A A IDA PD Tch Tstg Viso Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage L = 200H 10 32 -55 ~ +150 -55 ~ +150 2000 A W C C V Weight Typical value 2.0 g -- Parameter Conditions AC for 1minute, Terminal to case Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS10KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) (Tch = 25C) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage ID = 1mA, VGS = 0V IGS = 10A, VDS = 0V VGS = 20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 100V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case Thermal resistance Unit Min. 200 20 -- Typ. -- Max. -- -- 10 V V A -- 2.0 -- -- -- 3.0 0.40 2.00 1 4.0 0.52 2.60 mA V V -- -- -- -- 7.0 650 80 25 -- -- -- -- S pF pF pF -- -- -- -- 15 20 80 25 -- -- -- -- ns ns ns ns -- 0.95 -- V -- -- 3.91 C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 3 2 32 24 16 8 101 tw = 10s 7 5 100s 3 2 100 1ms 7 5 10ms 3 2 DC 10-1 TC = 25C 0 0 50 100 150 200 Single Pulse 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 5.0 TC = 25C Pulse Test VGS = 20V 10V 6V 5V 8 7 5 CASE TEMPERATURE TC (C) 10 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 4.5V 6 PD = 32W 4 4V 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 40 TC = 25C Pulse Test VGS = 20V 10V 6V 5V 4.0 3.0 4V 2.0 1.0 3.5V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS10KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 15A 6 4 10A 2 5A DRAIN CURRENT ID (A) 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 8 0 1.0 TC = 25C Pulse Test 0.6 0.4 VGS = 10V 20V 0.2 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 5 4 3 16 2 12 8 4 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 VDS = 10V Pulse Test TC = 25C 75C 125C 101 7 5 4 3 2 100 7 5 100 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 102 7 5 4 3 Ciss 2 102 7 5 4 3 Coss 2 TCh = 25C f = 1MHZ VGS = 0V Crss 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 0.8 20 0 TC = 25C Pulse Test 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 10 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 7 5 4 3 2 td(off) tf tr 101 td(on) 7 5 4 3 2 100 0 10 TCh = 25C VDD = 100V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET ARY FS10KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) 12 8 VDS = 50V 100V 150V 4 0 8 16 24 32 8 4 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (C) 0.4 0 GATE CHARGE Qg (nC) VGS = 10V 7 ID = 5A 5 Pulse Test 1.4 TC = 125C 75C 25C 12 0 101 10-1 VGS = 0V Pulse Test 16 40 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) 20 TCh = 25C ID = 10A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 5 3 2 10-1 7 5 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 3 2 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998