PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
FS10KMA-4A OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FS10KMA-4A
HIGH-SPEED SWITCHING USE
APPLICATION
CS Switch for CRT Display monitor, Switch mode
power supply, etc.
200
±20
10
30
10
32
–55 ~ +150
–55 ~ +150
2000
2.0
VGS = 0V
VDS = 0V
L = 200µH
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
V
A
A
A
W
°C
°C
V
g
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
●10V DRIVE
●VDSS ............................................................................... 200V
●rDS (ON) (MAX) ............................................................. 0.52Ω
●ID.........................................................................................10A
➁
➀
➂
➀
GATE
➁
DRAIN
➂
SOURCE
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
MITSUBISHI Nch POWER MOSFET
FS10KMA-4A
HIGH-SPEED SWITCHING USE
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
200
±20
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
0.40
2.00
7.0
650
80
25
15
20
80
25
0.95
—
—
±10
1
4.0
0.52
2.60
—
—
—
—
—
—
—
—
—
3.91
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
IGS = ±10µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 200V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 100V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
PERFORMANCE CURVES
0
8
16
24
32
40
0 20050 100 150
10–1
100
2
3
5
7
101
2
3
5
7
2
3
5
1013357 2 102
357 2 103
357
5
7
2
100µs
tw = 10µs
1ms
10ms
DC
TC = 25°C
Single Pulse
0
2
4
6
8
10
0246810
VGS = 20V
PD = 32W
TC = 25°C
Pulse Test
10V
4.5V
4V
5V
6V
0
1.0
2.0
3.0
4.0
5.0
0 1.0 2.0 3.0 4.0 5.0
VGS = 20V
TC = 25°C
Pulse Test
10V
3.5V
5V
6V
4V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FS10KMA-4A
HIGH-SPEED SWITCHING USE
10
0
10
1
23457 23457
10
2
10
2
2
3
4
5
7
10
3
10
1
2
3
4
5
7Ciss
Coss
Crss
T
C
h = 25°C
f = 1MH
Z
V
GS
= 0V
10
0
10
2
10
1
23457 23457
10
0
10
1
2
3
4
5
7
2
3
4
5
5
7
T
C
= 25°C
125°C
75°C
V
DS
= 10V
Pulse Test
0
4
8
12
16
20
0 4 8 12 16 20
T
C
= 25°C
V
DS
= 10V
Pulse Test
0
2
4
6
8
10
0 4 8 12 16 20
10A
5A
I
D
= 15A
T
C
= 25°C
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
10
0
10
2
10
1
23457 23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
h = 25°C
V
DD
= 100V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
d(on)
t
f
t
r
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FS10KMA-4A
HIGH-SPEED SWITCHING USE
0
4
8
12
16
20
0 8 16 24 32 40
V
DS
= 50V
150V
100V
T
C
h = 25°C
I
D
= 10A
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0
4
8
12
16
20
0 0.8 1.6 2.4 3.2 4.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50 0 50 100 150
V
GS
= 10V
I
D
= 5A
Pulse Test
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
tw
D
=
T
tw
T
