Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these requiremetns. Common goals are to reduce power supply size, weight and improve their efficiency. The following describes Hitachi's design concept with related recommended devices. Power MOSFET for Switching Power Supply (1) ae Inout Commendation products Classtication | vohage | ~=fow | 10-30 | S0-S0W [50-100W [100-200W] OW 2SK579 | 2SK1153 }2SK1155 } 2SK1159 | 2SK1163 | 2SK1169 2SK580 | 2SK1154 |2SK1156 | 2SK1160 | 2SK1164 | 2SK1170 2SK1151 |2SK1862 ]2SK1157 ]2SK1181 | 2SK1165 ] 2SK1526 Ps 2SK1152 2SK1158 | 2SK1162 | 28K1166 | 25K1527 shack! 100 - 2SK1313 | 2SK1163 | 2SKt167 | 2SK1629 Fly-be eV 2SK1314 | 25K1206 | 2SK1168 | 2SK1836 2SK1540 | 25K1225 | 2SK1268 | 2SK1837 SKI561 | 2SK1315 28K1626 | 2SK1316 28K1328 2SK513 |2SK513 | 2SK534 | 2sKeaa |2SK6B4 2SK1199 |2SK41S | 2SK695 | esKeas JosKess AC 28K1338 |2SK1199 } 2SK696 | 2SKE9S |2SK1204 Forward. | 999 - 9SK1200 | 2SK1202 | 2sKe96 |2SK1205 264 V 28K1201 | 2SK1203 | 29k1203 |25K1342 28K1340 | 25K1204 |2SK1573 28K1341 | 28K1205 | 2SK1770 2SK1528 | 29K1342 |2SK1773 Power MOSFET for Switching Power Supply (II) gigs ut Commendation products Classitcation | p __.| volage|-1ow _T 10~s0w T 30-s0w_T 50~100W [100-200w] ~_200W_| 2sitaz |2sui7s fosvets |esizzo |2si2i7 | 2sK1297 28244 | 2SJo46 | asi2ig Jesiese lesveta feskizca DC jaska74 | 2sKe7o | 2sK971 |2sK972 |2ski296 | 2sk1665 5~12V | oexo75 | asK1093 | 2SK1094 | 2SK1095 2SK1648 | 2SK1622 pend 28J278 | 28245 | 2SJo21 {2SJeso |28K622 | osK1304 Conver 2sk430 | 28279 | 28222 |2siz97 |2SK1303 nyener 2sk1299 | 25/296 | 2SKe22 De2dv 28k1254 |28K740 | 2SK1302 2SKi949 | 2SK1301 | 2SK1307 28K1306 |28K1623 28K1620 25K1918 2sKs4o | 2SK741 |2sK623 [2sKe23 | 2ski670 2sk74 | 2SK1621 |2SK1135 29Ki671 pe4av 28K1335 | 2SK1635 |2SK1919 2SK1948 2SK1668 2SK1762 IGBTs for Switching Power Supply r Absolute Maximum Ratings | Electrical Characteristics (typ) Package! 784, |vces | Vaes| lo | Pc |Vce(sal) [Ces] off WM] MY AE OW |) fic fvce (pF) | (ns TO-220AB | GNG015A 600} 120] 15 60 | 3 | 15] 15 |t500] 07 GN4530C 450} 420| 30 150 13 | 30} 12 |22501 06 TOP. |GN6030C | goo! 420! 36 | 150 13 | 301 15 |2250| 07 GN12015C | 1200} 220} 15 | 150} 35] 15 | 15 |1800] 07 GN60S0E 600 | #20] 50 200 | 3 | 50] 15 [3700] 08 GN6075E 60} 120; 75 | 260 13 | 75 | 15 {5450 08 TO-aPL. GN12030E | 1200] +201 30 200 | 35 { 30] 15 13600] 0.7 GN12050E | 1200] 420} so | 200 | 35] 50| 15 |6000] 08 1.5.2 DII-Series Dil-Series MOSFETs are the second generation products for Hitachi switching devices. These devices incorporate built-in gate to source back to back zener diode protection to increased ESD ruggedness. Table 5: DII-Series Typical Characteristics Package Type Number N-Ch P-Ch vpss (V) +20 15 * 3 Value at Tc = 25C Dfl-Series presents : higher lyfsl between 2 & 3 times. e lower RDS(ON) between 30-50% based on the same chip size then DI-Series. ton toff (as) (ns) ** : Test conditions : Vpg>I pR pion I p= /21 pmax (DC) (__]: Built in high speed diode version