©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX54/A/B/C
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage : BDX54
: BDX54A
: BDX54B
: BDX54C
- 45
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 8 A
ICP *Collector Current (Pulse) - 12 A
IB Base Current - 0.2 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining V oltage
: BDX54
: BDX54A
: BDX54B
: BDX54C
IC = - 100mA, IB = 0 - 45
- 60
- 80
- 100
V
V
V
V
ICBO Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BDX54
: BDX54A
: BDX54B
: BDX54C
VCE = - 22V, IB = 0
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 mA
hFE * DC Current Gain VCE = - 3V, IC = - 3A 750
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 12mA - 2 V
VBE(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 12mA - 2.5 V
VF* Parallel Diode Forward V oltage IF = - 3A
IF = - 8A - 1.8
- 2.5 - 2.5 V
V
BDX54/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
Power Darlington TR
Complement to BDX53, BDX53A, BDX53B and BDX 53C respect ively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BDX54/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -10
100
1000
10000
100000
VCE = -3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
-3.2
-3.4
-3.6
IC = 250IB
VBE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0 -1 -10
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
-3.2
IC = 250IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.4
-2.6
-2.8
-3.0
VF(sat )[V], F ORWARD VOLTAGE
IF[A], FORWARD CURRENT
-1 -10 -100 -1000
-0.1
-1
-10
-100
BDX54C
BDX54B
BDX54A
IC Max. (Continuous)
IC Max. (Pulsed)
BDX54
DC
100us
10us
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PD[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDX54/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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changes at any time without notice in order to improve
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