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April 1, 2003
To all our customers
Cautions
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2SD1133, 2SD1134
Silicon NPN Triple Diffused
ADE-208-905 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1133 2SD1134 Unit
Collector to base voltage VCBO 70 70 V
Collector to emitter voltage VCEO 50 60 V
Emitter to base voltage VEBO 55V
Collector current IC44A
Collector peak current IC(peak) 88A
Collector power dissipation PC*140 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
Note: 1. Value at TC = 25°C.
2SD1133, 2SD1134
2
Electrical Characteristics (Ta = 25°C)
2SD1133 2SD1134
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 70——70——V I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 50——60——V I
C = 50 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5 ——5 ——V I
E = 10 µA, IC = 0
Collector cutoff current ICBO ——1 ——1 µAV
CB = 50 V, IE = 0
DC current transfer ratio hFE1*160 — 320 60 — 320 VCE = 4V IC = 1 A*2
hFE2 35——35—— I
C = 0.1 A*2
Collector to emitter
saturation voltage VCE(sat) ——1——1VI
C = 2 A, IB = 0.2 A*2
Base to emitter voltage VBE ——1——1VV
CE = 4 V, IC = 1 A*2
Gain bandwidth product fT— 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A*2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by hFE1 as follows.
2. Pulse test.
BCD
60 to 120 100 to 200 160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
2
5
1.0
0.5
Collector current IC (A)
0.2
0.1
0.05 215 5010 20 100
Collector to emitter voltage VCE (V)
ICmax(Continuous)
Area of Safe Operation
(TC = 25°C)
(20 V, 2 A)
(50 V, 0.24 A) (60 V, 0.15 A)
(10 V, 4 A)
DC Operation
2SD1133 2SD1134
2SD1133, 2SD1134
3
TC = 25°C
IB = 0
10 mA
20
30
40
50
60
70
80
90
5
4
3
2
1
02
Collector current IC (A)
4
Collector to emitter voltage VCE (V)
8610
Typical Output Characteristics
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.010 0.6 1.00.2 0.8 1.41.2
Collector current IC (A)
Base to emitter voltage VBE (V)
0.4
T
C
= 75°C
–25°C
25°C
VCE = 4 V
Typical Transfer Characteristics
1,000
500
200
100
50
20
5
10
0.01 0.02
DC current transfer ratio hFE
0.05 2
Collector current IC (A)
0.1 0.5 50.2 1.0
VCE = 4 V
DC Current Transfer Ratio
vs. Collector Current
TC = 75°C
25
–25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00.20.01 0.02 1.00.05 0.1 0.5 2 5
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (A)
Collector to emitter saturation voltage VCE(sat) (V)
IC = 10 IB
TC = 75°C
25
–25
2SD1133, 2SD1134
4
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