ADVANCED LINEAR DEVICES, INC. ALD1123E/ALD1121E QUAD/DUAL EPAD(R) PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY FEATURES BENEFITS * Electrically Programmable Analog Device * Precision matched electrically after packaging * Simple, elegant single-chip user option * * * * * * * * * * * * * * * * * * * * * * CMOS Technology Operates from 2V, 3V, 5V to 10V Flexible basic circuit building block and design element Very high resolution -- average e-trim voltage resolution of 0.1mV Wide dynamic range -- current levels from 0.1A to 3000A Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps Proven, non-volatile CMOS technology Typical 10 years drift of less than 2mV Usable in voltage mode or current mode High input impedance -- 1012 Very high DC current gain -- greater than 109 Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68A Tight matching and tracking of on-resistance between different devices with e-trim Wide dynamic resistance matching range Very low input currents and leakage currents Low cost, monolithic technology Application-specific or in-system programming modes Optional user software-controlled automation Optional e-trim of any standard/custom configuration Micropower operation Available in standard PDIP, SOIC and hermetic CDIP packages Suitable for matched-pair balanced circuit configuration Suitable for both coarse and fine trimming as well as matched MOSFET array applications * * * * * * * to trimming voltage/current values Excellent device matching characteristics with or without additional electrical trim Remotely and electrically trim parameters on circuits that are physically inaccessible Usable in environmentally sealed circuits No mechanical moving parts -- high G-shock tolerance Improved reliability, dependability, dust and moisture resistance Cost and labor savings Small footprint for high board density applications PIN CONFIGURATION ALD1123E PN1 1 GN1 2 DN1 M1 M2 16 SN2 15 DN2 3 14 GN2 V-1, SN1 4 13 PN2 PN4 5 12 SN3 GN4 6 11 DN3 DN4 7 10 GN3 V-2, SN4 8 9 PN3 M4 M3 ORDERING INFORMATION Operating Temperature Range* 0C to +70C 0C to +70C 16-Pin Plastic Dip Package 16-Pin SOIC Package ALD1123E PC ALD1123E SC DC, PC, SC PACKAGE PIN CONFIGURATION ALD1121E PN1 1 8 SN2 7 DN2 6 GN2 5 PN2 M1 Operating Temperature Range* 0C to +70C 0C to +70C 8-Pin Plastic Dip Package 8-Pin SOIC Package ALD1121E PA ALD1121E SA GN1 2 DN1 3 SN1,V- M2 4 DA, PA, SA PACKAGE * Contact factory for industrial temperature range (c) 2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com APPLICATIONS GENERAL DESCRIPTION * Precision PC-based electronic calibration * Automated voltage trimming or setting * Remote voltage or current adjustment of ALD1123E/ALD1121E are monolithic quad/dual EPAD(R) (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1123E/ALD1121E are precision matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in electrical characteristics. The ALD1123E has four (4) separate source pins. SN1, SN2 share a common substrate pin V-1 which has to be connected to the most negative voltage potential. Likewise, SN3, SN4 share a common substrate pin V-2 which has to be connected to the negative voltage potential for SN3, SN4. The ALD1121E has two (2) separate source pins (SN1, SN2). Both SN1, SN2 share a common substrate pin 4 which has to be connected to the most negative voltage potential. inaccessible nodes * PCMCIA based instrumentation trimming * Electrically adjusted resistive load * Temperature compensated current sources and current mirrors * Electrically trimmed/calibrated current sources * Permanent precision preset voltage level shifter * Low temperature coefficient voltage and/or current bias circuits * Multiple preset voltage bias circuits * Multiple channel resistor pull-up or pull-down * * * * * * * * circuits Microprocessor based process control systems Portable data acquisition systems Battery operated terminals and instruments Remote telemetry systems E-trim gain amplifiers Low level signal conditioning Sensor and transducer bias currents Neural networks Using an ALD1123E/ALD1121E MOSFET array is simple and straight forward. The MOSFETs function in electrical characteristics as n-channel MOSFETs except that all the devices have exceptional matching to each other. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an on-resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. Since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. These MOSFET devices have very low input currents, and as a result a very high input impedance (>10 12 Ohm). The gate voltage from a control source can drive many MOSFET inputs with practically no loading effects. Used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100 nA to 3 mA range, and with either a positive, negative or zero tempco. Optional EPAD Threshold Voltage Trimming By User BLOCK DIAGRAM ALD1121E PN1 (1) DN2 (7) DN1 (3) PN2 (5) GN2 (6) GN1(2) ~ M1 M2 V- (4) SN1(4) SN2 (8) BLOCK DIAGRAM The basic EPAD MOSFET device is a monotonically adjustable device which means the device can normally be e-trimmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Used as an in-circuit element for trimming or setting a combination of voltage and/or current characteristics, it can be e-trimmed remotely and automatically. Once e-trimmed, the set voltage and current levels are stored indefinitely inside the device as a nonvolatile stored charge, which is not affected during normal operation of the device, even when power is turned off. A given EPAD device can be adjusted many times to continually increase its threshold voltage. A pair of EPAD devices can also be connected differentially such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. The ALD1123E/ALD1121E can be e-trimmed with the ALD EPAD programmer to obtain the desired voltage and current levels. Or they can be e-trimmed as an active in-system element in a user system, via user designed interface circuitry. PN1, PN2, etc., are pins required for optional e-trim of respective MOSFET devices. If unused, these pins are to be connected to V- or ground. For more information, see Application Note AN1108. ALD1123E PN1 (1) DN1 (3) DN2 (15) GN1(2) ALD1123E/ALD1121E DN3 (11) PN3 (9) DN4 (7) ~ V-1 (4) M2 M3 SN2 (16) PN4 (5) GN4 (6) GN2 (14) GN3(10) M1 SN1 (4) PN2 (13) SN3 (12) Advanced Linear Devices ~ V-2 (8) M4 SN4 (8) 2 ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range Power dissipation Operating temperature range PA, SA, PC, SC package DA, DC package Storage temperature range Lead temperature, 10 seconds -0.3V to +13.2V 6.6V 0.3V to V+ +0.3V 600 mW 0C to +70C -55C to +125C -65C to +150C +260C OPERATING ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified ALD1123E Min Typ Parameter Symbol Drain to Source Voltage 1 VDS Initial Threshold Voltage 2 Vt i 0.990 E-trim Vt Range Vt 1.000 Drain - Gate Connected TCVDS Voltage Tempco 1.000 ALD1121E Typ 1.010 0.990 3.000 1.000 1.000 Max Unit 10.0 V 1.010 V 3.000 V Test Conditions IDS = 1A T A = 21C -1.6 -1.6 mV/C ID = 5A -0.3 0.0 -0.3 0.0 mV/C mV/C ID = 50A ID = 68A +2.7 +2.7 mV/C ID = 500A VOS i 1 Tempco of VOS TCVOS 5 4 Min 10.0 Initial Offset Voltage 3 Differential Threshold Voltage Max DV t 5 1 5 V/C 5 2.000 mV 2.000 VDS1 = VDS2 V Tempco of Differential Threshold Voltage 4 TCDV t 0.033 Long Term Drift V t /t -0.02 Long Term Drift Match V t /t -5 Drain Source On Current IDS(ON) 3.0 0.033 -0.05 -0.02 mV/C -0.05 mV 1000 Hours -5 V 1000 Hours 3.0 mA VG =VD = 5V VS = 0V Vt = 1.0 Drain Source On Current 4 IDS(ON) Initial Zero Tempco Voltage 3 VZTCi Zero Tempco Current 0.8 0.8 mA VG =VD = 5V V S = 0V Vt = 3.0 1.52 1.52 V V t = 1.000V IZTC 68 68 A Initial On-Resistance 3 RON i 500 500 On-Resistance Match RON 0.5 0.5 % VGS = 5V VDS = 0.1V NOTES: 1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at any voltage between V- and V+. 2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage value. 3. Initial and Final values are the same unless deliberately changed by user. 4. These parameters apply only when Vt of one or more of the devices are to be changed by user. ALD1123E/ALD1121E Advanced Linear Devices 3 OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25C V+ = +5.0V unless otherwise specified ALD1123E Min Typ Transconductance gm 1.4 1.4 mA/V VD = 10V,VG =Vt + 4.0 Transconductance Match gm 25 25 A/V VD = 10V,VG =Vt + 4.0 Low Level Output Conductance gOL 6 6 A/V VG = Vt +0.5V High Level Output Conductance gOH 68 68 A/V VG = Vt +4.0V Drain Off Leakage Current ID(OFF) 400 4 pA nA TA = 125C 100 1 pA nA TA = 125C 5 10 IGSS Input Capacitance CISS Cross Talk Relaxation Time Constant Relaxation Voltage 4 4 tRLX VRLX Min 400 4 5 100 1 10 Max Unit Test Conditions Symbol Gate Leakage Current Max ALD1121E Typ Parameter 25 25 pF 60 60 dB 2 2 -0.3 -0.3 f = 100KHz Hours % 1.0V Vt 3.0V E-TRIM CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified Parameter E-trim Vt Range Symbol 4 Vt Min ALD1123E Typ 1.000 ALD1121E Typ Max Min 3.000 1.000 Max 3.000 Unit Test Conditions V Resolution of V t E-trim Pulse Step 4 RV t Change in Vt Per E-trim Pulse 4 V t / N E-trim Pulse Voltage 4 Vp E-trim Pulse Current 4 Ip Pulse Frequency 4 pulse ALD1123E/ALD1121E 0.1 1 0.1 0.5 0.05 11.75 12.00 1 0.5 0.05 12.25 11.75 12.00 2 2 50 50 Advanced Linear Devices mV mV/ pulse 12.25 Vt = 1.0V V t = 2.5V V mA KHZ 4 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS +1.0 TA = +25C DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT (mA) 20 VGS = +12V 15 VGS = +10V VGS = + 8V 10 VGS = + 6V 5 VGS = + 4V VGS = + 2V 0 TA = +25C VGS = +10V 0 VGS = +6V VGS = +8V -1.0 0 2 4 6 8 10 12 -200 -160 -120 -80 -40 DRAIN SOURCE ON VOLTAGE (V) 40 80 120 160 +200 DRAIN SOURCE ON CURRENT vs. THRESHOLD VOLTAGE 3.0 DRAIN SOURCE ON CURRENT (mA) 6 DRAIN SOURCE ON CURRENT (mA) 0 DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE VG = 5V 5 4 Vt = 1.0V 3 Vt = 1.5V Vt = 2.0V 2 Vt = 2.5V 1 Vt = 3.0V -50 -25 0 25 50 75 100 TA = +25C VDS = +5.0V VGS = +5V VGS = +4V 2.0 VGS = +3V 1.0 VGS = +2V VGS = +1V 0 0 0 125 0.5 1.0 1.5 2.0 2.5 3.0 AMBIENT TEMPERATURE (C) THRESHOLD VOLTAGE (V) TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE 3.5 75 2.0 HIGH LEVEL OUTPUT CONDUCTANCE (A/V) TA = +25C TRANSCONDUCTANCE ( mA/V) VGS = +12V 1.5 1.0 5.0 VGS = Vt + 4.0V VDS = 10V TA = +25C 70 60 VGS = Vt + 4.0V VDS = 5.0V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ALD1123E/ALD1121E 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOLTAGE (V) THRESHOLD VOLTAGE (V) Advanced Linear Devices 5 TYPICAL PERFORMANCE CHARACTERISTICS LOW LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE 12 4.0 ID = 1.0A 3.0 Vt = 3.0V 2.0 Vt = 2.0V LOW LEVEL OUTPUT CONDUCTANCE(A/V) THRESHOLD VOTAGE (V) VDS = VGS Vt = 2.5V Vt = 1.5V 1.0 Vt = 1.0V VGS = Vt + 0.5V VDS = 5.0V 10 8 6 4 2 0 -50 -25 0 25 50 75 100 -50 125 -25 AMBIENT TEMPERATURE (C) DRAIN OFF LEAKAGE CURRENT (pA) TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE TRANSCONDUCTANCE (mA/V) 2.5 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 400 300 IDS 200 100 0 -50 -25 70 60 50 40 50 75 100 25 50 75 100 125 10 TA = +25C 5 VGS = Vt + 0.5V VDS = 5.0V 0 125 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOTAGE (V) AMBIENT TEMPERATURE (C) ALD1123E/ALD1121E 0 LOW LEVEL OUTPUT CONDUCTANCE vs. THRESHOLD VOLTAGE LOW LEVEL CURRENT OUTPUT CONDUCTANCE (A/V) HIGH LEVEL OUTPUT CONDUCTANCE (mA/V) 80 25 125 100 AMBIENT TEMPERATURE (C) VGS = Vt + 4.0V VDS = 5.0V 0 75 500 125 100 -25 50 600 HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE -50 25 DRAIN OFF LEAKAGE CURRENT IDS vs. AMBIENT TEMPERATURE AMBIENT TEMPERATURE (C) 90 0 AMBIENT TEMPERATURE (C) Advanced Linear Devices 6 TYPICAL PERFORMANCE CHARACTERISTICS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 -55C 4 -25C 3 0C 2 1 70C 0 0 CHANGE IN DIFFERENTIAL THRESHOLDVOLTAGE (mV) DRAIN SOURCE ON CURRENT ( A) 5 1 2 3 125C 4 Zero Temperature Coefficient (ZTC) ZTC 125C 125C 125C 50 { { Vt = 1.0V { Vt = 1.2V - 25C Vt = 1.4V - 25C - 25C 1.0 5 1.4 1.2 1.8 1.6 2.0 GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. ON - RESISTANCE 10000 +10 +8 REPRESENTATIVE UNITS +6 +4 +2 0 -2 -4 -6 -8 VDS = RON * IDS(ON) VGS = +0.9V to +5.0V 1000 VDS = 5.0V 100 D VDS 10 IDS(ON) VGS 1.0 S VDS = 0.5V 0.1 -10 -50 -25 0 25 50 75 100 0.1 125 1.0 GATE SOURCE VOLTAGE vs. DRAIN SOURCE ON CURRENT 4 IDS(ON) VGS VDS = 0.5V TA = +125C S 3 VDS = 0.5V TA = +25C 2 VDS = 5V TA = +25C 1 VDS = 5V VDS = RON * IDS(ON) TA = +125C 0 0.1 1 10000 10 100 1000 Vt = 1.000V VDS = VGS 4 TA = -55C 3 TA = 0C 2 TA = +50C 1 TA = +125C 0 10000 DRAIN SOURCE ON CURRENT (A) ALD1123E/ALD1121E 1000 5 VDS D 100 DRAIN SOURCE ON CURRENT vs. OUTPUT VOLTAGE DRAIN SOURCE ON CURRENT (mA) 5 10 ON - RESISTANCE (K) AMBIENT TEMPERATURE (C) GATE SOURCE VOLTAGE (V) ZTC 0 DRAIN SOURCE ON CURRENT, BIAS CURRENT (A) DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 0 1 2 3 4 5 OUTPUT VOLTAGE (V) Advanced Linear Devices 7 TYPICAL PERFORMANCE CHARACTERISTICS OFFSET VOLTAGE vs. AMBIENT TEMPERATURE GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE OFFSET VOLTAGE (mV) 3 GATE LEAKAGE CURRENT (pA) 4 REPRESENTATIVE UNITS 2 1 0 -1 -2 -3 600 500 400 300 200 IGSS 100 0 -4 -50 -25 0 25 50 75 100 -50 125 GATE SOURCE VOLTAGE vs. ON - RESISTANCE +125C VGS DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/ C ) GATE SOURCE VOLTAGE (V) 4.0 VDS IDS(ON) S 0.0V VDS 5.0V 3.0 +25C 2.0 1.0 0.1 1 10 100 25 50 75 100 125 1000 5 -55C TA +125C 2.5 0 -2.5 -5 10000 ON - RESISTANCE (K) ALD1123E/ALD1121E 0 DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT 5.0 D -25 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) 1 10 100 1000 DRAIN SOURCE ON CURRENT (A) Advanced Linear Devices 8