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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7002L N-Channel Enhancement Mode Field Effect Transistor Features * * * * * * Description High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Very Low Capacitance Fast Switching Speed This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply, and switching applications. D D S G SOT-23 G S Ordering Information Part Number Marking Package Packing Method 2N7002L 70L SOT-23 3L Tape and Reel (c) 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1 www.fairchildsemi.com 1 2N7002L -- N-Channel Enhancement Mode Field Effect Transistor October 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1 M) 60 V VGSS Gate-Source Voltage ID TJ, TSTG TL Maximum Drain Current Continuous 20 Non Repetitive (tp < 50 s) 40 Continuous 115 Pulsed 800 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16 inch from Case for 10 Seconds V mA -55 to +150 C 300 C Thermal Characteristics(1) Values are at TA = 25C unless otherwise noted. Symbol PD RJA Value Unit Maximum Power Dissipation Parameter 200 mW Derate Above 25C 1.6 mW/C Thermal Resistance, Junction-to-Ambient 380 C/W Note: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 380C/W when mounted on a minimum pad. Scale 1: 1 on letter size paper ESD Rating(2) Symbol Parameter HBM Human Body Model per ANSI/ESDA/JEDEC JS-001-2012 CDM Charged Device Model per JEDEC C101C Value Unit 50 V >2000 V Note: 2. ESD values are in typical, no over-voltage rating is implied, ESD CDM zap voltage is 2000 V maximum. (c) 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1 www.fairchildsemi.com 2 2N7002L -- N-Channel Enhancement Mode Field Effect Transistor Absolute Maximum Ratings Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. VGS = 0 V, ID = 10 A 60.0 65.2 Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage V VDS = 60 V, VGS = 0 V 0.024 1 IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V, TJ = 125C 0.080 500 IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 0.107 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -0.037 -100 nA V A On Characteristics(3) VGS(th) RDS(ON) VDS(ON) ID(ON) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage On-State Drain Current Forward Trans-conductance VDS = VGS, ID = 250 A 1.81 2.50 VGS = 10 V, ID = 500 mA 0.80 3.35 7.50 VGS = 10 V, ID = 500 mA, TJ = 100C 5.62 13.50 VGS = 5 V, ID = 50 mA 2.68 7.50 VGS = 5 V, ID = 50 mA, TJ = 100C 3.97 13.50 VGS = 10 V, ID = 500 mA 1.68 3.75 VGS = 5 V, ID = 50 mA 0.13 1.50 VGS = 10 V, VDS 2 VDS(ON) 500 557 VGS = 4.5 V, VDS = 10 V 75 571 VDS 2 VDS(ON), ID = 200 mA 80 214 V mA mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 12.8 50 pF 3.25 25 pF 1.52 5 pF VGS = 0 V, f = 1.0 MHz 22.2 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25 4.35 20 ns 15.6 20 ns Maximum Continuous Drain-Source Diode Forward Current 115 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 0.8 A VSD Drain-Source Diode Forward Voltage 1.5 V Switching Characteristics ton Turn-On Time toff Turn-Off Time (3) Drain-Source Diode Characteristics and Maximum Ratings IS VGS = 0 V, IS = 115 mA(3) 0.818 Note: 3. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1 www.fairchildsemi.com 3 2N7002L -- N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics 1.8 0.6 ID, DRAIN CURRENT (A) 6.0 VGS=10V 0.4 7.0 8.0 0.3 9.0 3.0 0.2 0.1 0.0 0.0 1.0 2.0 3.0 VGS=4.0V 1.7 RDS(ON), NORMALIZED DRAIN-SOUCE ON-RESISTANCE 5.0 0.5 4.0 4.5 4.5 5.0 1.6 6.0 1.5 6.5 1.4 7.0 1.3 8.0 9.0 1.2 10 1.1 1 0.9 0.8 4.0 0 0.2 0.4 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.75 1.5 1.25 1 0.75 0.5 -75 -50 -25 0 25 50 75 100 125 2.5 2 125oC 1.5 25oC 1 -55oC 0.5 0 150 0 0.2 0.4 0.6 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature 0.8 1 Figure 4. On-Resistance Variation with Drain Current and Temperature 1.00 Vth, NORMALIZED GATE-OURCE THRESHOLD VOLTAGE 1.15 VDS = 10V ID, DRAIN CURRENT (A) 1 3 ID = 0.5A VGS = 10V 2.25 0.8 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current Figure 1. On-Region Characteristics 2.5 0.6 ID, DRAIN CURRENT (A) -55oC 25oC 0.75 125oC TJ = 150oC 0.50 0.25 1.1 ID = 1mA VGS = Vds 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 0.00 0 1 2 3 4 5 6 -75 7 VGS, GATE TO SOURCE VOLTAGE (V) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 6. Gate Threshold Variation with Temperature Figure 5. Transfer Characteristics (c) 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1 -50 www.fairchildsemi.com 4 2N7002L -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics 1 ID = 250uA VGS = 0V 1.1 IS, REVERSE DRAIN CURRENT (A) BVDSS, NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.125 1.075 1.05 1.025 1 0.975 0.95 0.925 0.9 0.1 TJ= 125oC -55oC 25oC 0.01 0.001 -75 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE 100 125 150 0.2 0.4 (oC) 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 7. Breakdown Voltage Variation with Temperature VGS, GATE-SOURCE VOLTAGE (V) CAPACITANCE (pF) 10 Ciss 10 Coss f = 1MHz VGS = 0V Crss 8 6 4 Id=500mA 115mA 2 280mA 0 1 0.1 1 0 10 0.1 0.2 0.3 0.4 0.5 0.6 Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics Figure 11. Figure 12. Switching Waveforms (c) 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1 0.7 Qg, Gate Charge (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) www.fairchildsemi.com 5 2N7002L -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) 2N7002L -- N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continued) ID, DRAIN CURRENT (A) 1 100 s 0.1 R DS(ON) LIMIT 0.01 1ms 10ms 100ms 1s 10s DC SINGLE PULSE R JA = 380 o C/W T A = 25o C 0.001 0.01 0.1 1 10 100 200 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Maximum Safe Operating Area TRANSIENT THERMAL IMPEDANCE Normalized Thermal Impedance ZoJA 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t, Rectangular Pulse Duration Figure 14. Transient Thermal Response Curve (c) 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1 www.fairchildsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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