© 2000 IXYS All rights reserved 1 - 2
Features
●International standard package
with DCB ceramic base plate
●Planar passivated chips
●Short recovery time
●Low switching losses
●Soft recovery behaviour
●Isolation voltage 3600 V~
●UL registered E 72873
Applications
●Antiparallel diode for high frequency
switching devices
●Free wheeling diode in converters
and motor control circuits
●Inductive heating and melting
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●High reliability circuit operation
●Low voltage peaks for reduced
protection circuits
●Low noise switching
●Low losses
Dimensions in mm (1 mm = 0.0394")
3000
3600
-40...+150
-40...+125
110
28800
29300
23300
23800
2400
2640
2160
2380
150
12.7
9.6
50
2.25-2.75/20-25
4.50-5.50/40-48
150 1.05
1.27
260 1.19
1.36
0.228
0.143
12
3
80
300 250 300
300 44
400 66
Preliminary data
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
75 430 A
75 304
1640
0.85
1.34 mW
MEA 300-06DA MEK 300-06DA MEE 300-06DA
749
875
123 123 123
VRSM VRRM Type
V V
600 600
Symbol Test Conditions Maximum Ratings
IFRMS TC = °C
IFAVM
ÿÿ
①TC = °C; rectangular, d = 0.5 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
TVJ = 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms(60 Hz), sine A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine A2s
t = 8.3 ms(60 Hz), sine A2s
TVJ °C
Tstg °C
TSmax °C
Ptot TC = 25°CW
VISOL 50/60 Hz, RMS t = 1 min V~
IISOL £ 1 mA t = 1 s V~
MdMounting torque (M6) Nm/lb.in.
Terminal connection torque (M6) Nm/lb.in.
dSCreeping distance on surface mm
dAStrike distance through air mm
aMaximum allowable acceleration m/s2
Weight g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
IRTVJ = 25°CV
R= VRRM mA
TVJ = 25°CV
R= 0.8 • VRRM mA
TVJ = 125°CV
R= 0.8 • VRRM mA
VFIF = A; TVJ =125°CV
TVJ =25°CV
IF = A; TVJ =125°CV
TVJ =25°CV
VT0 For power-loss calculations only V
rT
RthJH DC current K/W
RthJC DC current K/W
trr IF = A TVJ = 100°Cns
IRM VR= V TVJ = 25°CA
-di/dt = A/msT
VJ = 100°CA
Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 300-06 DA
MEK 300-06 DA
MEE 300-06 DA
VRRM = 600 V
IFAVM = 304 A
trr = 250 ns
123
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© 2000 IXYS All rights reserved 2 - 2
200 600 10000 400 800
200
250
300
350
400
0.001 0.01 0.1 1 10
0.00
0.05
0.10
0.15
0.20
0.25
0 40 80 120 160
0.4
0.6
0.8
1.0
1.2
1.4
Kf
TVJ
°C-diF/dt
t
s
K/W
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VFR
diF/dt
V
200 600 10000 400 800
0
50
100
150
200
100 1000
0
5
10
15
20
0.0 0.4 0.8 1.2 1.6
0
100
200
300
400
500
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
µC
A/
m
sA/
m
s
trr
ns
tfr
ZthJS
A/
m
s
µs
MEA 300-06 DA MEE 300-06 DA
MEK 300-06 DA
814
Fig. 7 Transient thermal impedance junction to heatsink
TVJ= 100°C
VR = 300V TVJ= 100°C
IF = 300A
Constants for ZthJS calculation:
iR
thi (K/W) ti (s)
1 0.002 0.08
2 0.008 0.024
3 0.054 0.112
4 0.164 0.464
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
Qr
IRM
TVJ=125°C
TVJ=25°C
IF= 600A
IF= 300A
IF= 150A
IF= 600A
IF= 300A
IF= 150A
IF= 600A
IF= 300A
IF= 150A
VFR
tfr
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
Fig. 2 Typ. reverse recovery
charge Qr versus -diF/dt
Fig. 1 Forward current IF versus
max. voltage drop VF per leg
Fig. 4 Dynamic parameters Qr, IRM
versus junction temperature TVJ
Fig. 5 Typ. recovery time trr
versus -diF/dt Fig. 6 Typ. peak forward voltage VFR
and tfr versus diF/dt
ZthJH
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