TLP523,TLP523-2,TLP523-4
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TO SHIBA Phot ocou pler GaAs Ired & Photo-Transistor
TLP523, TLP523-2, TLP523-4
Programmable Controllers
DC-Output Module
Solid State Relay
The TOSHIBA TLP523, -2 and -4 consist of a gallium arsenide infrared
emitting diode coupled with a silicon, Darlingt on con nected, phototransistor
which has an integral base-emitter resistor to optimize switching speed and
elevated temper a ture characteristics.
The T LP523-2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523-4 provides four isolated cha nnel s per packa ge.
• Current transfer ratio: 500% (min) (IF = 1 mA)
• Isolation voltage: 2500 Vrms (min)
• Collector-emitter voltage: 55 V (min)
• Leakage curre nt: 10μA (max) (Ta = 85°C)
• UL recognized: UL1577, file no. E67349
• c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Pin Configurations (top vi ew)
1
4
3
2
TLP523
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
1
2
7
6
3
8
TLP523-2
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitte r
6, 8 : Collector
4
5
5
6
7
12
8
9
1
2
15
3
TLP523-4
4
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
TOSHIBA
11-5B2
Weight : 0.26 g (typ.)
TOSHIBA
11-10C4
Weight : 0.54 g (typ.)
TOSHIBA
11-20A3
Weight: 1.1 g (typ.)
Unit: mm
Start of commercial production
1984-08
TLP523,TLP523-2,TLP523-4
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Absolute Maximum Ra ti ngs (Ta = 25°C)
Characteristic Symbol
Rating
Unit
TLP523
TLP523-2
TLP523-4
LED
Forward current IF 60 50 mA
Forward current derati ng ΔIF/°C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA/°C
Pulse forward current
(100 μs pulse, 100 pps) IFP 1 A
Diode power dissipat i on
PD 70 60 mW
Diode power dissipat i on derating ΔPD/°C -0.8 (Ta ≥ 39°C) -0.6 (Ta ≥ 25°C) mW/°C
Reverse voltage VR 5 V
Detector
Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 0.3 V
Collector current IC 150 mA
Collect or power dissipat i on
(1 circuit) PC 150 100 mW
Collect or power dissipat i on derating
(1 circuit) (Ta ≥ 25°C)) ΔPC/°C -1.5 -1.0 mW/°C
Operating tem perature range Topr -55 to 100 °C
Storage temperature range Tstg -55 to 125 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total power dissipat i on (1 circ uit) PT 250 150 mW
Total power dissipat i on derating
(Ta ≥ 25°C) (1 circuit) ΔPT/°C -2.5 -1.5 mW/°C
Isolation voltage
(AC, 60 s, R.H.≤ 60%) (Note 1) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause thi s product to decrease in the reliability significantly even if
the operating con diti on s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Tos hiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data ( i. e. r elia bil it y test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 20 mA
Collector current Ic ― ― 40 mA
Operating tem perature range Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP523,TLP523-2,TLP523-4
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Detector
Collector-emitter breakdown voltage V(BR) CEO IC = 1 mA 55 — — V
Collector dark current ICEO IF = 0 mA, VCE = 24 V — 10 200 nA
IF = 0 mA, VCE = 24 V, Ta = 85°C — 0.5 10 μA
Capacitance collector to emitter CCE V = 0 V, f = 1 MHz — 10 — pF
Coupled
Current transf er ratio IC/IF IF = 1 mA, VCE = 1 V 500 2000 — %
Collector-emitter saturation volt age VCE(sat) IC = 50 mA , IF = 10 mA — — 1 V
Capacitanc e input to output CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation resist ance RS VS = 500 V, R.H.≤ 60% 5×1010
1014 — Ω
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
Turn-on time tON VCC = 10 V, RL = 180 Ω (Fig. 1)
IF = 16 mA — 3 — μs
Turn-off time tOFF — 80 — μs
Fig. 1: Switching Time Test Circuit
VCC
VCE
IF RL
IF IF
VCE
tON
9V
1V
tOFF
TLP523,TLP523-2,TLP523-4
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IF – Ta
Allowable forward current
IF (mA)
Ambient temperature Ta (°C)
100
80
-20
0
60
40
20
120 100
80 60
20 40 0
TLP523
TLP523 -2, -4
Forward voltage VF (V)
IF – VF
Forward current IF (mA)
100
50
0.6
0.3
5
0.5
30
3
1
10
0.1 0.8 1.0 1.2 1.4 1.6 1.8
Ta = 25°C
ΔVF / ΔTa – IF
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
-3.2
-2.0
-2.4
-2.8
-0.4
-1.6
-1.2
-0.8
Forward current IF (mA)
0.1 0.3 1 3 10 30
IFP – VFP
Pulse forward current IFP (mA)
Pulse forward voltage VFP (V)
1000
500
0.6
50
300
30
10
100
1 1.0 1.4 1.8 2.2 2.6
3
5
3
Pulse width ≤ 10μs
Repetitive frequency = 100Hz
Ta = 25°C
IFP – DR
Pulse forward current IFP (mA)
Duty cycle patio DR
5000
3000
10-3
10
1000
500
30
100
50
300
10-1 10-2 100
Pulse width ≤ 100μs
Ta = 25°C
PC – Ta
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
160
-20
0
120
80
40
120 100
80 60
20 40 0
200
TLP523
TLP523 -2, -4
TLP523,TLP523-2,TLP523-4
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IC – IF
Collect or cur re nt IC (mA)
Forward current IF (mA)
300
100
50
30
10
5
3
1 0.3 1 3 10 30
VCE = 1V
Ta = 25°C
Sample 1
2
3
IC – IF
Collect or cur re nt IC (mA)
Forward current IF (mA)
300
100
50
30
10
5
3
1 0.3 1 3 10 30
VCE = 1.2V
Ta = 25°C
Sample 1
2
3
100 80 60 40 0 20 -20 -40
1.0
0.8
0
0.6
0.4
0.2
1.2
1.6
1.4
Ambient temperature Ta (°C)
VCE(sat) – Ta
Collector-emitter saturation voltage VCE (sat) (V)
Test condition
A : IC=100mA, IF=10mA
B : IC=50mA, IF=10mA
C : IC=10mA, IF=1mA
D : IC=1mA, IF=0.5mA
Test condition A
B
C
D
120
140
Ambient temperature Ta (°C)
IC – Ta
Collect or cur re nt IC (mA)
100 80 60 40 0 20 -20 -40
100
80
0
60
40
20
Test condition
A : IF =10mA, VCE=1.2V
B : IF =10mA, VCE=1.0V
C : IF =2mA, VCE=1.2V
D : IF =2mA, VCE=1.0V
E : IF = 1 mA, V CE=1.2V
F : IF =1mA, VCE=1.0V
Test condition
B
C
D
A
E
F
TLP523,TLP523-2,TLP523-4
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Collector-emitter voltage VCE (V)
IC – VCE
Collect or cur re nt IC (mA)
2.0 0.4 0 1.2 2.4 3.2
0.5
0.3
0.1 1.6
0.8 2.8
Ta = 25°C
300
1
100
50
3
10
5
30
PC Max.
0.5mA
1mA
2mA
IF = 10mA
Safe Operating Area
Collect or cur re nt IC (mA)
Collector-emitter voltage VCE (V)
500
1
100
50
3
10
5
30
300
3 0.5 1 10 30
* Single
nonrepetitive
pulse
Ta=25°C
Ta=60°C
DC operating Ta=25°C
100ms*
100ms*
1s*
1s*
10ms*
10ms*
IC – VCE
Collect or cur re nt IC (mA)
Collector-emitter voltage VCE (V)
500
300
3 0.3 0.1
1
100
50
3
10
5
30
1 10 30
0.5
0.3
0.1
IF = 1mA
Ta = 25°C
Sample 1
2
3
PC Max.
Switching Time
Switching time (μs)
Load resistance RL (Ω)
500
1
100
50
3
10
5
30
300
30 100 1k 3k 10k 300
tOFF
tON
90%
10%
IF
VOUT
VOUT
RL
Ta = 25°C VCC = 10V
IF
tOFF(IF=10mA)
tOFF(IF=1mA)
tON(IF=1mA)
tON(IF=10mA)
TLP523,TLP523-2,TLP523-4
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