ON Semiconductor BFR30LT1 BFR31LT1 JFET Amplifiers N-Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318-08, STYLE 10 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Dissipation(1) Total Device TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit IGSS -- 0.2 nAdc OFF CHARACTERISTICS Gate Reverse Current (VGS = 10 Vdc, VDS = 0) Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) -- -- 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS -0.7 -- -- -- -3.0 -1.3 -4.0 -2.0 Vdc (ID = 50 Adc, VDS = 10 Vdc) 1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 1 361 Publication Order Number: BFR30LT1/D BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit IDSS 4.0 1.0 10 5.0 mAdc 1.0 1.5 0.5 0.75 4.0 4.5 -- -- 40 20 25 15 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 SMALL-SIGNAL CHARACTERISTICS yfs Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30 BFR31 BFR30 BFR31 (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz) mAdc yos Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 Adc, VDS = 10 Vdc) BFR30 BFR31 Adc Input Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Ciss -- -- 5.0 4.0 pF Reverse Transfer Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Crss -- -- 1.5 1.5 pF TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 M 4 3 2 1 0 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 10 8 6 4 2 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency VGS(off) -1.2 V 1.2 VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 0 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS(off) -1.2 V 1.0 0.8 VDS = 15 V 0.6 0.4 0.2 -0.8 V -1.0 V 0.2 10 Figure 2. Noise Figure versus Source Resistance I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 0 -1.2 Figure 3. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 4. Common Source Transfer Characteristics http://onsemi.com 362 0 BFR30LT1 BFR31LT1 TYPICAL CHARACTERISTICS 5 VGS = 0 V VGS(off) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 5 VGS(off) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 5. Typical Drain Characteristics 10 VGS(off) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 -4 V -5 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 Figure 6. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 25 VGS(off) -5.8 V 8 6 VDS = 15 V 4 2 0 -7 Figure 7. Typical Drain Characteristics -6 -5 -4 -3 -2 VGS, GATE-SOURCE VOLTAGE (VOLTS) -1 Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 363 0