BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99 1 (4)
Document Number 85025
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D
Low noise figure
D
High power gain
13 581
23
1
94 9280
BFR182T Marking: RG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
313 652 13 570
BFR182TW Marking: WRG
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 2 V
Collector current IC35 mA
Base current IB5 mA
Total power dissipation Tamb ≤ 60
°
C Ptot 200 mW
Junction temperature Tj150
°
C
Storage temperature range Tstg –65 to +150
°
C
Maximum Thermal Resistance
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35
m
m Cu RthJA 450 K/W
BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 20-Jan-99
2 (4) Document Number 85025
Electrical DC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 15 V, VBE = 0 ICES 100
m
A
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1
m
A
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 10 V
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 6 V, IC = 5 mA hFE 50 90
VCE = 8 V, IC = 20 mA hFE 100
Electrical AC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 6 V, IC = 5 mA, f = 500 MHz fT5.5 GHz
qy
VCE = 8 V, IC = 20 mA, f = 500 MHz fT7.5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.3 pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.2 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.65 pF
Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 900 MHz F 1.5 dB
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 1.75 GHz F 2.0 dB
Power gain VCE = 8 V, IC = 20 mA, ZS = 50
W
,
ZL = ZLopt, f = 900 MHz Gpe 15 dB
VCE = 8 V, IC = 20 mA, ZS = 50
W
,
ZL = ZLopt, f = 1.75 GHz Gpe 11 dB
Transducer gain VCE = 8 V, IC = 20 mA, f = 900 MHz,
Z0 = 50
W
S21e214 dB
BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99 3 (4)
Document Number 85025
Dimensions of BFR182T in mm
95 11346
Dimensions of BFR182TW in mm
96 12236
BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 20-Jan-99
4 (4) Document Number 85025
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
