MPS6540 (siuicon NPN SILICON AMPLIFIER/MIXER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER/ MIXER TRANSISTOR ... designed for use in high frequency amplifier and mixer applications, @ High Collector Emitter Breakdown Voltage BVCEO = 30 Vdc (Min) @ Ic = 1.0 mAdc @ High Current-GainBandwidth Product fT = 800 MHz (Typ) @ Ic = 2.0 mAdc @ Low Feedback Capacitance Ceb = 0.5 pF (Typ) @ Veg = 10 Vde qT SEATING Si 4 | t FE PLANE t_ K MAXIMUM RATINGS oi. | Rating Symbot Value Unit be t Collector-Emitter Voltage VcEO 30 Vde a Collector-Base Voltage Vv 30 Vde STYLE 2: [ 7 cb PIN 1, BASE ~~ _t Emitter-Base Voltage Vep 4.0 Vde 2. EMITTER C79 B Ss Collector Current Continuous ' 50 rnAdc 3. COLLECTOR Lt Total Power Dissipation @ Ta = 25C Po 350 mw | s Derate above 25C 5.0 mw/oc Total Power Dissipation @ Tc = 25C Po 15 Watt Derate above 25C 12 mw/ec Operating and Storage Junction TST stg ~55 to +150 % Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermat Resistance, Junction to Ambient Rayalt) 357 cw Thermal Resistance, Junction to Case Reuc 125 cw {1) Rg ja is measured with the device soidered into a typical printed circuit board. CASE 29-02 TO-92 922 MPS6540 (continued) ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) | Characteristic = Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) BVeEO 30 - ~ Vdc (Ig = 1.0 mAdc, Ig = 0) Collector-Base Breakdown Voltage BVcB0 30 - - Vde (Ic = 100 wAde, Ie = 0} Emitter-Base Breakdown Voltage BVEBO 40 - - Vdc (ig = 10 uAde, Ic = 0) Collector Cutoff Current IcBpo - - 100 nAdc (Veg = 25 Vde; Ie = 0} ON CHARACTERISTICS DC Current Gain (1} hee 25 100 - _ (Ic = 2.0 mAdc, VcE = 10 Vdc) Collector-Emitter Saturation Voltage VCE(sat} - 0.3 0.5 Vde {Ig = 10 mAde, Ig = 1.0 mAdc) Base-Emitter On Voltage (1) VBE{on) - 0.1 0.95 Vde (Ig = 10 mAde, VcE = 5.0 Vde) DYNAMIC CHARACTERISTICS Current-GainBandwidth Product (1) fr 350 800 - MHz (Ic = 2.0 mAdc, VceE = 10 Vde, f = 100 MHz) Collector-Base Capacitance Cob _ 0.5 0.65 pF (Veg = 10 Vde, 1g = 0, f = 100 kHz) Real Part of Output Impedance Roep 80 - - k Ohms (Ig =2.0 mAdc, VcE = 10 Vde, f = 10.7 MHz) (1) Pulse Test: Pulse Width 300 us, Duty Cycie <2.0%. 923