BSS138W-TP - MICRO COMMERCIAL COMPONENTS

BSS138W

N-Channel

Enhancement Mode

Field Effect Transistor

Features

•High dense cell design for extremely low RDS(ON)

•Rugged and reliable

•Lead free product is acquired

•SOT-323 Package

•Marking Code: SS

VDS Drain-source Voltage 50 V

IDDrain Current-Continuous 0.22 A

VGS Gate-source Voltage 

f20 V

PDTotal Power Dissipation 0.3 W

R©JA Thermal Resistance Junction to Ambient 417 к/W

TJ Operating Junction Temperature -55 to +150 к

TSTG Storage Temperature -55 to +150 к

Internal Block Diagram

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20736 Marilla Street Chatsworth

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SOT-323

•Epoxy meets UL 94 V-0 flammability rating

•Moisture Sensitivity Level 1

Maximum Ratings @ 25OC Unless Otherwise Specified

Symbol Parameter Rating Unit

Halogen free available upon request by adding suffix "-HF"

•

Micro Commercial Components

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Suggested Solder

Pad Layout

1.90

0.70

0.90

0.65

GHJ

INCHES MM

DIM MIN MAX MIN MAX NOTE

A .071 .087 1.80 2.20

B .045 .053 1.15 1.35

D .026 Nominal 0.65Nominal

E .047 .055 1.20 1.40

F .012 .016 .30 .40

G .000 .004 .000 .100

H .035 .039 .90 1.00

J .004 .010 .100 .250

DIMENSIONS

C .083 .096 2.10 2.45

K .006 .016 .15 .40

1.GATE

SOURCE

DRAIN

BSS138W

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2016/12/01

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Electrical characteristics (Ta=25Я unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Units

Off characteristics

Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50 V

Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA

VDS =50V, VGS =0V 0.5 µA

Zero gate voltage drain current IDSS VDS =30V, VGS =0V 100 nA

On characteristics

Gate-threshold voltage (note 1) VGS(th) VDS =VGS, ID =1mA 0.80 1.50 V

VGS =10V, ID =0.22A 3.50

Static drain-source on-resistance (note 1) RDS(on)

VGS =4.5V, ID =0.22A 6



Forward transconductance (note 1) gFS VDS =10V, ID =0.22A 0.12 S

Dynamic characteristics (note 2)

Input capacitance Ciss 27

Output capacitance Coss 13

Reverse transfer capacitance Crss

VDS =25V,VGS =0V, f=1MHz

Switching characteristics

Turn-on delay time (note 1,2) td(on) 5

Rise time (note 1,2) tr 18

Turn-off delay time (note 1,2) td(off) 36

Fall time (note 1,2) tf

VDD=30V, VDS=10V,

ID =0.29A,RGEN=6ȍ

Drain-source body diode characteristics

Body diode forward voltage (note 1) VSD I

S=0.44A, VGS = 0V 1.4 V

Notes:

1. Pulse Test ; Pulse Width 300µs, Duty Cycle 2%.

2. These parameters have no way to verify.

Micro Commercial Components

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2016/12/01

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BSS138W

Micro Commercial Components

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0.2 0.4 0.6 0.8 1.0 1.2 1.4

1E-3

0.01

0.1

012345

0.0

0.5

1.0

1.5

2.0

0.2 0.4 0.6 0.8 1.0

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

002 6810

012345

0.0

0.2

0.4

0.6

0.8

1.0

1.2

25 50 75 100 125

0.0

0.5

1.0

1.5

2.0

Pulsed

Ta=100℃

VSD

IS —

—

Ta=25℃

SOURCE CURRENT IS (A)

SOURCE TO DRAIN VOLTAGE VSD (V)

VGS=10V

VGS=5V

VGS=4V

VGS=3V

VGS=3V,4V,5V,6V

Outpu t C h aract

eristics

VGS=2V

DRAIN CURRENT ID (A)

DRAIN TO SOURCE VOLTAGE VDS (V)

VGS=4.5V

Ta=25℃

Pulsed

VGS=10V

Ta=25℃

Pulsed

ON-RESISTANCE RDS(ON) ()

DRAIN CURRENT ID (A)

——

RDS(ON)

Ta=100℃

Ta=25℃

——

ON-RESISTANCE RDS(ON) ()

GATE TO SOURCE VOLTAGEGATE GS (V)

VGS

RDS(ON)

ID=500mA

VDS=3V

Pulsed

DRAIN CURRENT ID (A)

GATE TO SOURCE VOLTAGE VGS (V)

Transfer C

aracteristics

Ta=100℃

Ta=25℃

ID=250uA

Threshold Voltage

THRESHOLD VOLTAGE VTH (V)

JUNCTION TEMPERATURE Tj (℃)

Revision: A

2016/12/01

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Device Packing

Part Number-TPTape&Reel: 3Kpcs/Reel

Ordering Information :

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approval of Micro Commercial Components Corporation.

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Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF

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