2SJ549(S) - Renesas Electronics - Datasheet.Directory

2SJ549(L), 2SJ549(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-644A (Z)

2nd. Edition

Jul. 1998

Features

• Low on-resistance

RDS(on) = 0.11 Ω typ.

• Low drive current

• 4 V gete drive devices

• High speed switching

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

LDPAK

2SJ549(L),2SJ549(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS –60 V

Gate to source voltage VGSS ±20 V

Drain current ID–12 A

Drain peak current ID(pulse)Note1 –48 A

Body-drain diode reverse drain current IDR –12 A

Avalenche current IAP Note3 –12 A

Avalenche energy EAR Note3 12 mJ

Channel dissipation PchNote2 50 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

2SJ549(L),2SJ549(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0

Zero gate voltege drain current IDSS — — –10 µAV

DS = –60 V, VGS = 0

Gate to source leak current IGSS — — ±10 µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state RDS(on) — 0.11 0.15 ΩID = –6A, VGS = –10V Note4

resistance RDS(on) — 0.16 0.23 ΩID = –6A, VGS = –4V Note4

Forward transfer admittance |yfs|58—SI

= –6A, VDS = –10V Note4

Input capacitance Ciss — 580 — pF VDS = –10V

Output capacitance Coss — 300 — pF VGS = 0

Reverse transfer capacitance Crss — 85 — pF f = 1MHz

Turn-on delay time td(on) — 10 — ns VGS = –10V, ID = –6A

Rise time tr— 55 — ns RL = 6Ω

Turn-off delay time td(off) —85—ns

Fall time tf—60—ns

Body–drain diode forward voltage VDF — –1.2 — V ID = –12A, VGS = 0

Body–drain diode reverse

recovery time trr — 60 — ns IF = –12A, VGS = 0

diF/ dt = 50A/µs

Note: 4. Pulse test

2SJ549(L),2SJ549(S)

Main Characteristics

050 100 150 200

–10

–8

–6

–4

–2

0–2 –4 –6 –8 –10

–5 V

–4 V

0 –1–2–3–4–5

–10 V –3.5 V

–3 V

Pulse Test

–10

–8

–6

–4

–2

–2.5 V –25 °C

25 °CTc = 75 °C

V = –10 V

Pulse Test

V = –2 V

–0.1 –0.3 –1 –3 –10 –30 –100

–100

–20

–10

–2

–1

–0.2

–0.1

1 ms

Ta = 25 °C

100 µs

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Operation in

this area is

limited by R

DS(on)

10 µs

–0.5

–5

–50

PW = 10 ms (1 shot)

DC Operation (Tc=25 )

2SJ549(L),2SJ549(S)

–1.0

–0.8

–0.6

–0.4

–0.2

0–4 –8 –12 –16 –20

0.5

0.4

0.3

0.2

0.1

–40 0 40 80 120 160

0–10 V

I = –5 A

V = –4 V

–0.1 –1 –10

0.1

0.5

–0.2 –0.5 –2 –5

0.5

0.05

0.02

0.01

–0.1 –0.3 –1 –3 –10 –30 –100

–1, –2 A

I = –5 A

–2 A

–1 A

0.2

0.1 –10 V

V = –4 V

–1 A

–2 A

–5 A

275 °C

25 °C

Ta = –25 °C

V = –10 V

Pulse Test

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

Drain to Source On State Resistance

R ( )W

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

Forward Transfer Admittance |y | (S)

Forward Transfer Admittance vs.

Drain Current

Pulse Test

2SJ549(L),2SJ549(S)

–20

–40

–60

–80

–4

–8

–12

–16

–20–100 81624

32 40

1000

100

300

–0.1 –0.2 –0.5 –1 –2 –5 –10

V = –50 V

–25 V

–10 V

I = –10 A

V = –10 V

–25 V

–50 V

d(off)

d(on)

V = –10 V, V = –30 V

Pw = 5 µs, duty < 1 %

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Dynamic Input Characteristics

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

500

200

100

–0.1 –0.2 –1 –5 –10 0 –10 –20 –30 –40 –50

2000

1000

500

200

100

–0.5 –2

di / dt = 50 A / µs

V = 0, Ta = 25 °C

V = 0

f = 1 MHz

Ciss

Coss

Crss

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.

Drain to Source Voltage

2SJ549(L),2SJ549(S)

–10

–8

–6

–4

–2

0–0.4 –0.8 –1.2 –1.6 –2.0

D. U. T

Monitor

50W

Vin

–15 V

(BR)DSS

E = • L • I •

V – V

AR AP DSS

DSS DD

V = 0, 5 V

–10 V

–5 V

25 50 75 100 125 150

Channel Temperature Tch (°C)

Repetitive Avalanche Energy E (mJ)

Maximum Avalanche Energy vs.

Channel Temperature Derating

Avalanche Test Circuit Avalanche Waveform

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

I = –12 A

V = –25 V

duty < 0.1 %

Rg > 50

2SJ549(L),2SJ549(S)

0.3

0.1

0.03

0.01

10 µ 100 µ 1 m 10 m 100 m 1 10

D = PW

ch – c(t) = s (t) • ch – c

ch – c = 2.5 °C/W, Tc = 25 °C

q g q

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Vin Monitor

D.U.T.

Vin

-10 V

= –30 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50W

90%

10%

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermao Impedance s (t)

Switching Time Test Circuit Waveform

2SJ549(L),2SJ549(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SJ549(L),2SJ549(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SJ549(L),2SJ549(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SJ549(L),2SJ549(S)

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5. This product is not designed to be radiation resistant.

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