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Page <1> V1.007/09/12
Bipolar Transistor
Description:
A Silicon NPN transistor in a TO-39 case
intended for high speed switching applications.
Absolute Maximum Ratings:
Collector-Base Voltage, V
cbo
: 75V
Collector-Emitter Voltage, V
ceo
: 40V
Emitter-Base Voltage, V
ebo
: 6V
Continuous Collector Current, I
c
: 800mA
Total Device Dissipation (T
c
= +25ºC), PD : 1.2W
Derate above 25ºC : 6.85mW/ºC
Total Device Dissipation (T
a
= + 25ºC), P
d
: 400mW
Derate above 25ºC : 2.28mW/ºC
Operating Junction Temperature Range, T
j
: -65ºC to +200 ºC
Storage Temperature Range, Tstg : -65ºC to 200ºC
OFF Characteristics
Collector-Emitter Breakdown Voltage V
(br)ceo
I
c
= 10mA, I
b
= 0 40 - V
Collector-Base Breakdown Voltage V
(br)cbo
I
c
= 10µA, I
e
= 0 75 - V
Emitter-Base Breakdown Voltage V
(br)ebo
I
e
= 10µA, I
c
= 0 6 - V
Collector Cut-Off Current I
cbo
V
ce
= 60V, I
e
= 0 - 0.01 µA
V
ce
= 60V, I
e
= 0, T
a
= +150ºC - 10 µA
I
cex
V
ce
= 60V, V
eb
(off) = 3V - 10 µA
Emitter Cut-Off Current I
ebo
V
eb
= 3V, I
c
= 0 - 10 µA
Base Cut-Off Current I
bl
V
ce
= 60V, V
eb
(off) = 0 - 20 µA
Electrical Characteristics: (T
a
= +25ºC Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
On Characteristics
DC Curent Gain h
fe
I
c
= 0.1mA, V
ce
= 10V 20 - -
I
c
= 1mA, V
ce
= 10V 25 - -
I
c
= 10mA, V
ce
= 10V 35 - -
I
c
= 10mA, V
ce
= 10V, T
a
= -55ºC 15 - -
I
c
= 150mA, V
ce
= 10V (Note 1) 40 120 -
I
c
= 150mA, V
ce
= 1V (Note 1) 20 - -
I
c
= 500mA, V
ce
= 10V (Note 1) 25 - -
Collector-Emitter Saturation Voltage
( Note 1)
V
ce
(sat) I
c
= 150mA, I
b
= 5mA - 0.3 V
I
c
= 500mA, I
b
= 50mA - 1 V
Base-Emitter Saturation Voltage
(Note 1)
V
be
(sat) I
c
= 150mA, I
b
= 15mA 0.6 1.2 V
I
c
= 500mA, I
b
= 50mA - 2 V
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Page <2> V1.007/09/12
Bipolar Transistor
Switching Characteristics
Delay Time tqV
cc
= 30V, I
c
= 150mA, V
ce(off)
= 0.5V, I
b
1 =
15mA
- 10 ns
Rise Time tr- 25 ns
Storage Time tsV
cc
= 30V, I
c
= 150mA, I
b
1 = I
b
2 = 15mA - 225 ns
Fall Time tf- 60 ns
Active Region Time Constant T
a
I
c
= 150mA, V
ce
= 30V - 2.5 ns
Small-Signal Characteristics
Current Gain-Bandwidth Product
(Note 2) f
t
I
c
= 20mA, V
ce
= 20V, f = 100MH
z
, (Note 2) 250 - MH
z
Output Capacitance Cobo V
cb
= 10V, I
e
= 0, f = 100kH
z
- 8 pF
Input Capacitance Cibo V
eb
= 0.5V, I
c
= 0, f = 10kH
z
- 25 pF
Input Impedance hie
I
c
= 1mA, V
ce
= 10V, f = 1kH
z
1 3.5 kΩ
I
c
= 10mA, V
ce
= 10V, f = 1kH
z
0.2 1 kΩ
Voltage Feedback Ratio Hre
I
c
= 1mA, V
ce
= 10V, f = 1kH
z
5 ×10¯4
I
c
= 10mA, V
ce
= 10V, f = 1kH
z
- 2.5 ×10¯4
Output Admittance hoe
I
c
= 1mA, V
ce
= 10V, f = 1kH
z
3 15 µmhos
I
c
= 10mA, V
ce
= 10V, f = 1kH
z
10 100 µmhos
Collector-Base Time Constant rb′C
c
I
c
= 20mA, V
cb
= 20V, f = 31.8MH
z
5 150 ps
Noise Figure NF I
c
= 100µA, V
ce
= 10V, R
s = 1k
Ω, f = 1kMH
z
- 4 dB
Real Part of Common-Emitter High
Frequency input Impedance Re(hie) I
c
= 20mA, V
ce
= 20V, f = 300MH
z
- 60 Ω
Notes
1. Pulse Test: Pulse Width <
=
300s, Duty Cycle <
=
2%.
2. f
t
is dened as the frequency at which IhfeI extrapolates to unity.
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Page <3> V1.007/09/12
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Bipolar Transistor 2N2218A
Dim Min Max
A 8.5 9.39
B 7.74 8.5
C 6.09 6.6
D 0.4 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.83
J 0.73 0.86
K 12.7 -
L 42º 48º
Dimensions : Millimetres