Original Creation Date: 06/30/95
Last Update Date: 03/23/00
Last Major Revision Date: 02/29/00
MNLM118-X REV 0A0 MICROCIRCUIT DATA SHEET
OPERATIONAL AMPLIFIER
General Description
The LM118 is a precision high speed operational amplifier designed for applications
requiring wide bandwith and high slew rate. It features a factor of ten increase in speed
over general purpose devices without sacrificing DC performance.
The LM118 has internal unity gain frequency compensation. This considerably simplifies
its application since no external components are necessary for operation. However, unlike
most internally compensated amplifiers, external frequency compensation may be added for
optimum performance. For inverting applications, feedforward compensation will boost the
slew rate to over 150V/uS and almost double the bandwidth. Overcompensation can be used
with the amplifier for greater stability when maximum bandwidth is not needed. Further, a
single capacitor can be added to reduce the 0.1% settling time to under 1uS.
The high speed and fast settling time of these op amps make them useful in A/D converters,
oscillators, active filters, sample and hold circuits, or general purpose amplifiers.
This devices is easy to apply and offers an order of magnitude better AC performance than
industry standards such as the LM709.
NS Part Numbers
LM118H/883
LM118J-8/883
LM118J/883
LM118WG/883
Industry Part Number
LM118
Prime Die
LM118
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLM118-X REV 0A0
Features
- 15 MHz small signal bandwidth
- Guaranteed 50V/uS slew rate
- Maximum bias current of 250nA
- Operates from supplies of +5V to +20V
- Internal frequency compensation
- Input and output overload protected
- Pin compatible with general purpose op amps
2
MICROCIRCUIT DATA SHEET
MNLM118-X REV 0A0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage +20V
Power Dissipation
(Note 2) 750mWMetal Can Pkg 1000mWJ-8 Pkg 1250mWJ-14 Pkg 600mWCERAMIC SOIC
Differential Input Current
(Note 3) +10mA
Input Voltage
(Note 4) +15V
Output Short-Circuit Duration Continuous
Operating Temperature Range -55 C to +125 C
Thermal Resistance
ThetaJA 160 C/W Metal Can Pkg (Still Air @ 0.5W) 86 C/W (500LF/Min Air flow @ 0.5W) 120 C/W J-8 Pkg (Still Air @ 0.5W) 66 C/W (500LF/Min Air flow @ 0.5W) 87 C/w J-14 Pkg (Still Air @ 0.5W) 51 C/W (500LF/Min Air flow @ 0.5W) 198 C/W CERAMIC SOIC (Still Air @ 0.5W) 124 C/W (500LF/Min Air flow @ 0.5W)
ThetaJC 48 C/W Metal Can Pkg 17 C/W J-8 Pkg 17 C/W J-14 Pkg 22 C/WCERAMIC SOIC
Storage Temperature Range -65 C to +150 C
Lead Temperature 300 C(Soldering, 10 seconds)
ESD Tolerance
(Note 5) 2000V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guaranteed specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: The inputs are shunted with back-to-back diodes for overvoltage protection.
Therefore, excessive current will flow if a differential input voltage in excess of
1V is applied between the inputs unless some limiting resistance is used.
Note 4: For supply voltages less than +15V, the absolute maximum input voltage is equal to
the supply voltage.
Note 5: Human body model, 1.5K Ohms in series with 100pF.
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MNLM118-X REV 0A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +15V, Vcm = 0
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vio Input Offset
Voltage Vcm = +11.5V, Rs=50 Ohms -4 +4 mV 1
-6 +6 mV 2, 3
Vcc = +20V, Rs=50 Ohms -4 +4 mV 1
-6 +6 mV 2, 3
Vcc = +20V, Vcm = +15V, Rs=50 Ohms -4 +4 mV 1
-6 +6 mV 2, 3
Vcc = +5V, Rs=50 Ohms -4 +4 mV 1
-6 +6 mV 2, 3
Iio Input Offset
Current Vcm = +11.5V, Rs=10K Ohms -50 +50 nA 1
-100 +100 nA 2, 3
Vcc = +20V, Rs=10K Ohms -50 +50 nA 1
-100 +100 nA 2, 3
Vcc = +5V, Rs=10K Ohms -50 +50 nA 1
-100 +100 nA 2, 3
Iib Input Bias
Current Vcm = +11.5V, Rs=10K Ohms 1 250 nA 1
1 500 nA 2, 3
Vcc = +20V, Rs=10K Ohms 1 250 nA 1
1 500 nA 2, 3
Vcc = +5V, Rs=10K Ohms 1 250 nA 1
1 500 nA 2, 3
PSRR Power Supply
Rejection Ratio +Vcc = 20V to 5V, Rs=50 Ohms 70 dB 1, 2,
3
-Vcc = -20V to -5V, Rs=50 Ohms 70 dB 1, 2,
3
CMRR Common Mode
Rejection Ratio Vcc = +15V, Vcm = +11.5V, Rs=50 Ohms 80 dB 1, 2,
3
Ios+ Short Circuit
Current t<25mS -65 -5 mA 1, 2,
3
Ios- Short Circuit
Current t<25mS 5 65 mA 1, 2
580mA3
4
MNLM118-X REV 0A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vcc = +15V, Vcm = 0
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Icc Power Supply
Current Vcc = +20V 8mA1
7mA2
11 mA 3
VioAdj Input Offset
Voltage Adjust Vcc = +20V 4-4mV1
Rin Input Resistance 2 1 MOhms 1
Vin Input Voltage
Range Vcc = +15V 1 -11.5 +11.5 V 1, 2,
3
Avs Large Signal
Voltage Gain Rl=2K Ohms, Vo=0 to -10V 3 50 V/mV 4
3 25 V/mV 5, 6
Rl=2K Ohms, Vo=0 to +10V 3 50 V/mV 4
3 25 V/mV 5, 6
Vout Output Voltage
Swing Rl=2K Ohms +12 -12 V 4, 5,
6
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vcc = +15V, Vcm = 0, Rs = 0, Rl = 2K Ohms, Cl = 33pF
Sr Slew Rate Vcc = +20V, Vin = -5V to +5V, Av=1 4 50 V/uS 7
Vcc = +20V, Vin = +5V to -5V, Av=1 4 50 V/uS 7
Note 1: Guaranteed by CMRR.
Note 2: Guaranteed parameter not tested.
Note 3: Datalog in K = V/mV
Note 4: Bench tested use TDN 25256223
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MICROCIRCUIT DATA SHEET
MNLM118-X REV 0A0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
05482HRA1 10LD CERPACK, 10LD CERAMIC SOIC (B/I CKT)
09556HR02 CERDIP (J14), CERDIP (J8) (B/I CKT)
09557HRA4 METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (B/I CKT)
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
J14ARH CERDIP (J), 14 LEAD (P/P DWG)
P000268A METAL CAN (H), 8 LEAD (PINOUT)
P000315A CERDIP (J), 8 LEAD (PINOUT)
P000316A CERDIP (J), 14 LEAD (PINOUT)
P000459A CERPACK, 10 LEAD (PINOUT)
WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
6
N
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 14
2 13
3 12
4 11
5 10
6 9
7 8
N/C
N/C
IN-
IN+
V-
N/C N/C
BAL/COMP 3
OUTPUT
V+
COMP 2
N/C
N/C
14 - LEAD DIP
LM118J
TOP VIEW
CONNECTION DIAGRAM
P000316A
BAL/COMP 1
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 10
2 9
3 8
4 7
5 6
N/C
Bal/Comp1
- IN
+IN
Bal/Comp3
OUT
Comp2
V+
N/C
LM118WG
10 - LEAD CERAMIC SOIC
TOP VIEW
CONNECTION DIAGRAM
P000459A
V-
MICROCIRCUIT DATA SHEET
MNLM118-X REV 0A0
Revision History
Rev ECN # Rel Date Originator Changes
0A0 M0003641 03/23/00 Rose Malone Update MDS - MNLM118-X, Rev. 0AL to MNLM118-X, Rev.
0A0 Fully Released MDS. Archive/Obsolete RETS118X,
Rev. AA
7
