SBC327 Semiconductor PNP Silicon Transistor Descriptions * High current application * Switching application Features * Suitable for AF-Driver stage and low power output stages * Complementary Pair with SBC337 Ordering Information Type NO. Marking SBC327 SBC327 Package Code0 TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Collector 2. Base 3. Emitter 0.38 1.200.1 1 2 3 KST-9020-000 1 SBC327 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 Base-Emitter turn on voltage VBE(ON) Collector-Emitter saturation voltage VCE(sat) - - V VCE=-1V, IC=-300mA - - -1.2 V IC=-500mA, IB=-50mA - - -700 mV - - -100 nA ICBO VCB=-25V, IE=0 DC current gain hFE* VCE=-1V, IC=-100mA Collector output capacitance fT Cob Unit -35 Collector cut-off current Transition frequency Min. Typ. Max. 100 - 630 - VCB=-5V, IE=10mA f=100MHz - 100 - MHz VCB=-10V, IE=0, f=1MHz - 16 - pF * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 KST-9020-000 2 SBC327 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 IC - VCE Fig. 2 IC -VBE Fig. 4 hFE - IC Fig. 5 VCE(sat) - IC KST-9020-000 3