KST-9020-000 1
SBC327
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driv er stage and low power output stages
• Complementary Pair with SBC337
Ordering Information
Type NO. Marking Package Code0
SBC327 SBC327 TO-92
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
2.54 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Collector
2. Bas e
3. Emitter
14.0±0.40
KST-9020-000 2
SBC327
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO -50 V
Collector-Emitter voltage VCEO -35 V
Emitter-base voltage VEBO -5 V
Collector current IC-800 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -35 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V
Collec tor -Emitter s a turation voltage VCE(sat) IC=-500mA, IB=-50mA - - -700 mV
Collector cut-off current ICBO VCB=-25V, IE=0 - - -100 nA
DC current gain hFE*VCE=-1V, IC=-100mA 100 - 630 -
Transition frequency fTVCB=-5V, IE=10mA
f=100MHz - 100 - MHz
Collec tor output capac itance Cob VCB=-10V, IE=0, f=1MH z - 16 - pF
* : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
KST-9020-000 3
SBC327
Electrical Characteristic Curves
Fig. 5 VCE(sat) - IC
Fig. 3 IC - VCE
Fig. 2 IC -VBE
Fig. 4 hFE - IC
Fig. 1 PC-Ta
