© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1 1Publication Order Number:
BUV27/D
BUV27
NPN Silicon Power
Transistor
This device is designed for use in switching regulators and motor
control.
Features
•Low Collection Emitter Saturation Voltage
•Fast Switching Speed
•Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage VCEO 120 Vdc
Collector−Emitter Breakdown Voltage VCBO 240 Vdc
Emitter−Base Voltage VEBO 7.0 Vdc
Collector Current − Continuous
− Peak (Note 1) IC
ICM 12
20 Adc
Base Current IB4.0 Adc
Total Device Dissipation (TC = 25°C)
Derate above 25°CPD70
0.56 W
W/°C
Operating and Storage Temperature TJ, Tstg − 65 to 150 °C
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient RqJC
RqJA 1.78
62.5 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
TO−220AB
CASE 221A
STYLE 1
POWER TRANSISTOR
12 AMPERES
120 VOLTS
70 WATTS
MARKING
DIAGRAM
BUV27 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
123
4
Device Package Shipping
ORDERING INFORMATION
BUV27 TO−220AB 50 per Rail
BUV27G TO−220AB
(Pb−Free) 50 per Rail
BUV27G
AYWW
BUV27
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
ICER Collector Cut−off
Current (RBE = 50 W)VCE = 240 V, TC = 125°C 3.0 mA
ICEX Collector Cut−off Current VCE = 240 V, VBE = −1.5 V, TC = 125°C 1.0 mA
IEBO Emitter Cut−off Current (IC = 0) VBE = 5 V 1.0 mA
VCEO(sus) Collector−Emitter Sustaining Voltage IC = 0.2 A, L = 25 mH 120 V
VEBO Emitter−Base Voltage (IC = 0) IE = 50 mA 7.0 30 V
VCE(sat)
(Note 2) Collector−Emitter Saturation Voltage IC = 4 A, IB = 0.4 A
IC = 8 A, IB = 0.8 A 0.7
1.5 V
VBE(sat)
(Note 2) Base−Emitter Saturation Voltage IC = 8 A, IB = 0.8 A 2.0 V
Resistive Load
ton
ts
tf
Turn−on Time
Storage Time
Fall Time
VCC = 90 V, IC = 8 A
VBE = −6 V, IB1 = 0.8 A
RBB = 3.75 W
0.4
0.5
0.12
0.8
1.2
0.25
ms
ms
ms
Inductive Load
ts
tf
ts
tf
Storage Time
Fall Time
Storage Time
Fall Time
VCC = 90 V, IC = 8 A
IB1 = 0.8 A, VBE = −5 V
LB = 1 mH
VCC = 90 V, IC = 8 A
IB1 = 0.8 A, VBE = −5 V
LB = 1 mH, TJ = 125°C
0.6
0.04
2.0
0.15
ms
2. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2%
BUV27
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3
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
ZqJC(t) = r(t) RqJC
RqJC = 1.785C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) ZqJC(t)
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 1. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02 100 200
0.1
0.02
0.01
20
2.0
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
16
10
0.02 20 120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
IC
, COLLECTOR CURRENT (AMP)
dc
100 ms
5.0 10 150
1.0
50
0.1
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 2 is based on T J(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 1.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0
Figure 3. Power Derating
T, TEMPERATURE (°C)
040 60 100 120 160
40
TC
20
60
PD, POWER DISSIPATION (WATTS)
0
2.0
TA
1.0
3.0
80 140
TC
TA
20
BUV27
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4
PACKAGE DIMENSIONS
CASE 221A−09
ISSUE AA
TO−220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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BUV27/D
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