Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=4.8A - - 0.85 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4.8A - 4.2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=500V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=400V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge3ID=8A - 45 72 nC
Qgs Gate-Source Charge VDS=400V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 25 - nC
td(on) Turn-on Delay Time3VDD=250V - 12 - ns
trRise Time ID=8A - 31 - ns
td(off) Turn-off Delay Time RG=9.1Ω,VGS=10V - 48 - ns
tfFall Time RD=31Ω-33-ns
Ciss Input Capacitance VGS=0V - 1250 2000 pF
Coss Output Capacitance VDS=25V - 270 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3Tj=25℃, IS=8A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=8A, VGS=0V, - 515 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
IRF840I
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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