Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Ease of Paralleling BVDSS 500V
▼ Fast Switching Characteristic RDS(ON) 0.85Ω
▼ Simple Drive Requirement ID8A
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 3.6 ℃/W
Rthj-a Maixmum Thermal Resistance, Junction-ambient 65 ℃/W
Data & specifications subject to change without notice
8
32
35
8
5.1
320
-55 to 150
201024071-1/4
±20
Rating
500
RoHS-compliant Product
Parameter
IRF840I
Parameter
Storage Temperature Range -55 to 150
G
D
S
A
PEC MOSFET provide the power designer with the best combination
of fast switching , lower on-resistance and reasonable GDSTO-220CFM(I)
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=4.8A - - 0.85 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4.8A - 4.2 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=500V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=400V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge3ID=8A - 45 72 nC
Qgs Gate-Source Charge VDS=400V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 25 - nC
td(on) Turn-on Delay Time3VDD=250V - 12 - ns
trRise Time ID=8A - 31 - ns
td(off) Turn-off Delay Time RG=9.1Ω,VGS=10V - 48 - ns
tfFall Time RD=31Ω-33-ns
Ciss Input Capacitance VGS=0V - 1250 2000 pF
Coss Output Capacitance VDS=25V - 270 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3Tj=25℃, IS=8A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=8A, VGS=0V, - 515 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.6 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
IRF840I
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
2/4
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
IRF840I
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
4
8
12
16
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
6.0V
5.0V
VG=4.5V
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=4.8A
VG=10V
0
2
4
6
8
0 4 8 12 16 20 24
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
6.0V
5.0V
VG=4.5V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
IRF840I
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
1s
100us
1ms
10ms
100m
0
2
4
6
8
10
12
0 102030405060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=8A
VDS =100V
V DS =250V
V DS =400V
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
DC
Package Outline : TO-220CFM
Millimeters
MIN NOM MAX
A4.50 4.70 4.90
A1 2.30 2.65 3.00
b0.50 0.70 0.90
b1 0.95 1.20 1.50
c0.45 0.65 0.80
c2 2.30 2.60 2.90
E9.70 10.00 10.40
L3 2.91 3.41 3.91
L4 14.70 15.40 16.10
φ---- 3.20 ----
e---- 2.54 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220CFM
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Package Code
IRF840I
Part Number
r
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
YWWSSS
LOGO
A1
A
c
E
φ
b
b1
L4
c2
A1
A
c
E
φ
b
b1
L4
c2
L3