Vi e i 2 Lbd Vv) 9.92 Info4im 42. doghis information note is intended to provide technical information on the S an nd iMix4 bit DYNAMIC RANDOM ACCESS MEMORIES HYBS141 i YES 4qAARA ISP eee ee eee = technology, layout and design aspects for prever rede due to electrostatic discharge. ELECTRO STATIC DISCHARGE (ESD) 2 IEMENS places a lot of emphasis on reliability and quality assurance. As electrostatic diceharnase (RS ic ane af the mnet dannerciic nroklearme in moerlarn slartranie cuctarme ae PA ye {oer Be? SR Re PR ag ee Or ee BER PRP See ee ae ap rr ey education and guidelines regarding ESD probiems and their management and controi are critical to the reliability of present al and future electronic systems. eee cor oF Pere i AWAIT ALIA Aiki CE ATID AC BOA TOR TIAA Pio oY LATWU! AN Veo Fea! WAS VP PAV ee iN WIAA The CICRACRIG Ah MARA Bhai Mhicd aera ratinn neliodan meartiondlar danine ae el Det ee ne CCN 4 WVRA Oey, B wes Lert reat ation) ivi MuGeS (ecu Lane) aesign SUNOS bel yaa protection is a fast operating input protection structure (field oxide = ch throuch device Ad. Fig. 1} which clamos the aoolied ootential for ' oe tet Fe er Prt Pier oe Fr} ap pe Bhar Bt Pee Pee about i5V and therefore protects tne gate oxide irom damage. The very bonding nad, The worst case series resistance between a | a aa et a =~ rete bras om me Me om. nie a VSS and VCC power supply bu _ do { no ae Further optimisation is achieved for 00 Tala onae va relawed design rule for the dista ae of contact hole to poly gate DASS transistor and the a ESD CHARACTERISATION At the device level, the ESD event is usually simulated by three different models, namely the human body modei (HBM), the charged device modei (CDM) and the fieid induced model (FIM). Li MAA Bama be) PUA PQA Ge PP i Pee The ideas af mndAoslinga thea Kiirman hRadwy Hiv a eansrAitar dieseharainna Hireuinhk a eemkined PE is Terk ROA Ad a body contact resistance had been widely accepted by the industry. The standard HBM jicae a eoneacitanes nf AWInE in eoriae with a 1 Ab racictanns fhAll TOA Monae nt Aart a a | rt at hel fa VOD ee WP ee Bee eR et lt el elU ia i | _ a | an & | u ia i | a. o = a ow a i = a a 3 a i o it a pit = a. Q - oo 4 a = rm ~ ra a a ta 3 suificient magnitude to cause E Fi woret agesih ea rees weaiida Ae Ui we FY Pe tt ta hs oe + the other lead tled to ground. A common real world example is a device in a tube with one side tou ching a gro! inded surface. upon discharge of the induced potential. The kK iiss be. eer wath & a I ke Poti Feit 7 For in evaluation of in 4M DRAM Aev.6 (inird generation) eiecirosiatic sensitivity SIEMENS uses the standardized human body model (HBM, MIL-STD-883C, Method auT oS). The different measurement setups are shown in Fig.2. For each measurement standard test equipment (IMCS Model 5000) is used 2 three times twelve devices from three different According to the four test setups of Fig. ces nassed an ESD stress of 2OOOY. Five devices out ot water lots were tested, All device tested pa an ESD stress of 2000 thirty six failed at an ESD stress of 4000 Volts. The results are summarized in Fig.3. ee REFEHENLES AH, Tareteki and L. Risch "ELECTROSTATIC DISCHARGE TEST STRUCTURES FOR CMOS CIRCUITS", Proc, ICMTS 89, Vol2, No. 1, March 1989, pp. 255-260. f2) H. Teretzki,"SCHUTZMASSNAHMEN GEGEN ESD IN MEGABIT DRAMs" Design & Elektronik, Heft 17 und 12, MaifJuni 1990), nn. 84-87 ae, 0.60 Dp. Woews, pata, a ee (3) W. Reezek and H. Terietzki," ZUVEARLASSIGKEITSASPEKTE DYNAMISCHER SPEICHER IN SUBMICRON CMOS TECHNOLOGIE", Prac. WME BO Vienna Austria, Sant. 89 on, Pay-272_ far Ly ttt | "EIMRIE! | lee nce Scores ANnCHGTARINED MMU kl mui fy fF DSTA, CIP Lo WS SORIA IVS DA Ge ee VERSORGUNGSLEIT TUNGEN AUF DAS ESD VERHALTEN EINES GAUSTEINS", Proc. 2.ESD Forum, Neuss, Germany, Oct. 1991, pp. 12-133. heSo ae . 32S: alt 4M-DRAM input protection circuit: Li 7 Diffusion Resistor ., Doce et oe AA PE A OB ee tk ee z pool, Vm ee1.5 ka ,C = 100 pF R Vas a rl f- eseeee= } i YEE UP B: FF ETUP C: UP D: Electrostatic discharge models:4M DRAM Rev IMCS MODEL 5000 TEST EQUIPMENT: 1.5k2, C = 100pF i RESULTS: 92 ey] cu] ou) ov a ae ae a s o|o|o)c 3 eu] cul ou] ew _ | ee eel eel 5 o)o)a)o A ou} ty] ou) ow So] | So) o e1o,5| oc pn Sp | | Se) af Solos Ow 23 |) c3o) re ep | | Co) tu) fe | Od) st ey na, i i i o IslsaS