OOe?s7b O FATRCHILD SEMICONDUCTOR 64 DE by S4b9b74 MPS9392/FTSO3392 MPS3393/FTSO3393 NPN Small Signal General Purpose PAIncHiLD A Schlumberger Company Amplifiers Te 4 43 Veeo... 25V (Min) PACKAGE fre ... 150-300 (MPS/FTSO3392), 90-180 (MPS/FTSO3393) MPS3392 TO-92 @ 2.0 mA MPS3393 TO-92 Complements ... 2N4125, 2N4126 FTSO3392 TO-236AA/AB FTSO3393 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature ~55 to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25 C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25C Case Temperature 1.0 W Voltages & Currents Veco Collector to Emitter Voltage 25V (Note 4) Vceo Collector to Base Voltage 25 V Veso Emitter to Base Voltage 5.0 V Ic Collector Current 100 mA ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC MIN MAX MIN MAX UNITS TEST CONDITIONS BVceo _| Collector to Emitter Breakdown | 25 25 Vv | lc = 1.0 mA, la =0 Voltage lego Emitter Cutoff Current 100 100 nA Ves = 5.0 V, lc =0 Icgo Collector Cutoff Current 100 100 nA Vea = 18 V, le =0 Ree DC Current Gain (Note 5) 150 | 300 90 180 Ilo =2.0 mA, Vce = 4.5 V Cop Output Capacitance 3.6 3.5 pF Vea = 10 V, le =0, f = 1.0 MHz Ate Small Signa! Current Gain 150 | 500 90 400 c oe Voce = 4.5 V, =1, Zz 3. These ratings give a maximum Junction temperature of 150 6 and (10-92) junction-to-case thermal resistance of 125 CW (derating factor of 8.0 mW C), junction-to-ambrent thermat resistance of 200 C/W (derating factor of 5.0 mW? C); (TO-236) junction-to-ambient thermal resistance of 357 CAV (derating factor of 2.8 mW? C}. 4 Rating reters toa high current point where collector to emitter voltage is lowest. 5 Pulse conditions: length = 300 us, duly cycle = 1% 6 For product family characterishc Curves, refer to Curve Set T144, ead ~ | Betay ercammemesnT9 HE a ae Se eet? o FAIRCHILD SEMICONDUCTOR MPS3702/FTSO3702 MPS3703/FTSO3703 PNP Small Signal General Vceo .. -30 V (Min) (MPS/FTSO3703) hre ... 60-300 @ 50 mA (MPS/FTSO3702) Veeteay .. -0.25 V (Max) @ 50 mA Complements ... MPS/FTSO3704, MPS/FTSO3705 eo & & Purpose Amplifier TA = Ab PACKAGE MPS3702 TO-92 MPS3703 TO-92 FTSO3702 TO-236AA/AB FTSO3703 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (M PS3702, MPS3703) (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25C Case Temperature 1.0 W Voltages & Currents 3702 3703 Veeo Collector to Emitter Voltage -25V -30 V (Note 4) Vero Collector to Base Voltage -40 V -50 V Veso Emitter to Base Voltage -5.0V -5.0V lc Collector Current 200 mA 200 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3702 3703 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown | 25 -30 Vv Ig = 10 mA, Is =0 Voltage (Note 5) BVcso Collector to Base Breakdown =| 40 -50 Vv Io = 100 pA, le = 0 Voltage BVeso Emitter to Base Breakdown |-5.0 -5.0 Vv le = 100 pA, Ic = 0 Voltage Iczo Collector Cutoff Current 100 100 nA Voa = 20V, le =O leso Emitter Cutoff Current 100 100 nA Ves = 3.0 V, Ic = 0 NOTES: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92} junction-to-case thermal resistance ot 125 C/W (derating factor of 8.0 mW/? GC}; junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/C); (TO-236)} junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW?? GC). 4. Rating refers to a high current point where collector to emitter voltage is lowest s Pulse conditions: length = 300 ps: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set 7212, Package mounted on 99.5% alumina 8mm x 8mm x 0.6 mm. xg EE FETE ET z EOI a 3-97 134b4b74 O02737? cane ee NESE FAIRCHILD SEMICONDUCTOR Sia b?4 00273748 4 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3702 3703 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS hre DC Current Gain (Note 5) 60 |; 300 | 30 150 te = 50 mA, Vee = -5.0 V Veetsat) Collector to Emitter Saturation 0.25 0.26 Vv lc = 50 mA, le = 5.0 mA Voltage (Note 5) Vecrom Base to Emitter "On" Voltage |-0.6 | -1.0 | -0.6 |-1.0 Vv Ic = 50 MA, Vce = ~5.0 V (Note 5) fr Current Gain Bandwidth Product} 100 100 MHz | Ic = 50 mA, Vce = -5.0 V, f = 20 MHz Cob Output Capacitance 12 12 pF Ves = ~10 V, f = 1.0 MHz 3-98 f { taa SHEE ee ee eee een eee cee eccceceee een een eee eee eee a eee s = FAIRCHILD SEMICONDUCTOR 3469674 00273749 &b MPS3704/FTSO3704 MPS3705/FTSO3705 NPN Small Signal General Purpose Amplifiers TG. 4.3 FAIRGHILD Schlumberger Company i i t Vceo ... 30 V (Min) PACKAGE here... 100-300 @ 50 mA (MPS/FTSO3704) MPS3704 TO-92 @ Vcewav -.. -0.6 V (Max) @ 100 mA (MPS/FTSO3704) MPS3705 TO-92 Complements ... MPS/FTSO3702, MPS/FTSO3703 FTSO3704 TO-236AA/AB FTSO3705 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25C Ambient Temperature 0,625 W 0.350 W* 70 C Ambient Temperature 0.400 W 25C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 30 V (Note 4) Vcso Collector to Base Voltage 50V Veso Emitter to Base Voltage 5.0 V lo Collector Current 600 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3704 3705 SYMBOL | GHARACTERISTIC MIN MAX] MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown; 30 30 v Io = 10 mA, le = 0 Voltage (Note 5) BVceo Collector to Base Breakdown 50 50 Vv lo = 100 pA, le =O Voltage BVeno Emitter to Base Breakdown 5.0 5.0 Vv le = 100 pA, ic =O Voltage lcso Collector Cutoff Current 100 700 nA Vos = 20 V, le = 0 leo Emitter Cutoff Current 100 100 nA Ves = 3.0 V, Ic =O re DC Current Gain (Note 5) 100 | 300 50 150 Io = 50 mA, Vee = 2.0 V NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state timits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal! resistance of 125C/W (derating factor of 8.0 mW/C}; junction-to-ambient thermal resistance of 200 C/W (derating factor of 50 mW/? C); (TO-236) junction-to-ambient thermal resistance of 357C/W (derating factor of 28 mW/ C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ps; duty cycle = 1% 6 For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.S FAIRCHILD SEMICONDUCTOR MPS3704/FTSO3704 T. doy. ay MPS3705/FTSO3705_ ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 3704 3705 | SYMBOL} CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS Veetsau Collector to Emitter Saturation 0.6 0.8 v le = 100 mA, fp = 5.0 mA Voltage (Note 5) Veeton Base to Emitter On" Voitage 0.5 1.0 0.5 1.0 Vv lc = 100 mA, Vee = 2.0 V (Note 5) fr Current Gain Bandwidth Product] 100 100 MHz | te = 50 mA, Voce = 2.0 V, f = 20 MHz Cob Output Capacitance 12 12 PF | Veg =10V, le =0, f= 1.0 MHz rena ante Te EU PO, EE ES ee ae at ee ee SE, 3-100FAIRCHILD SEMICONDUCTOR aR 3469674 O0273541 4 MPS5172/F TSOS172 NPN Small Signal General Purpose Amplifier T2044 Sa A Schlumberger Company @ hee ... 100-500 @ Ic = 10 mA PACKAGE Veet ... 0.25 V (Max) @ [c= 10 mA MPS5172 TO-92 Complements ... 2N4126, FTSO4126 FTSO5172 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage 26 Vv (Note 4) Veso Collector to Base Voltage 25V Veso Emitter to Base Voltage 5.0V le Collector Current 100 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Coilector to Emitter Breakdown Voltage| 25 Vv lc = 10 mA, Ip =0 Ices Collector Cutoff Current 100 nA | Vce = 25 V, Vee = 0 lcpo Collector Cutoff Current 100 nA | Vea = 25 V, le = 0 : 10 HA | Ves = 25 V, le = 01, Ta = 100C . leso Emitter Cutoff Current 100 | nA | Vee=5.0V, Ic=0 ; hee DG Current Gain (Note 5) 100 | 500 lc = 10 MA, Voz = 10 V i Veetsan Collector to Emitter Saturation Voltage 0.25 Vv Ic = 10 mA, ls = 1.0 mA | (Note 5) Veen Base to Emitter On Voltage 0.5 1.2 Vv Io = 10 MA, Vce = 10 V Cob Collector to Base Capacitance 1.6 10 pF Ves = 0, le = 0, f = 1.0 MHz hie Small Signal Current Gain 100 | 750 lc =10 MA, Voce = 10 V, f= 1.0 kHz NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W {derating factor of 80 mW/ C); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/ C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 28 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is towest. 5. Pulse conditions: fength = 300 us; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T144. * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm. 3-101FAIRCHILD SEMICONDUCTOR MPS6514/FTSO6514 MPS6515/F TSO6515 NPN Small Signal General FAIRCHILD chlumberger Company Purpose Amplifiers TR. 22.42 ! i Vceo ... 25 V (Min) PACKAGE hre ... 150-300 (MPS/FTSO6514), 250-500 (MPS/FTSO6515) MPS6514 TO-92 @ 2.0 mA . MPS6515 TO-92 fre ... 90 (Min) (MPS/FTSO6514), 150 (Min) FTSO6514 TO-236AA/AB (MPS/FTSO6515) @ 100 mA FTSO6515 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -5C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25 C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25 C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 25V (Note 4) Vceo Collector to Base Voltage 40V Veso Emitter to Base Voltage 40V lc Collector Current 100 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 6514 6515 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown| 30 30 Vv tc =0.5 mA, Ip =0 Voitage BVeso Emitter to Base Breakdown 4.0 4.0 Vv le = 100 wA, Ic = 0 Voltage leso Collector Cutoff Current 50 50 nA | Vcp = 30 V, le =O 1.0 1.0 pA Ves = 30 V, le =0, Ta = 60C hee DC Current Gain (Note 5) 150 | 300 | 250 | 500 le = 2.0 mA, Voce = 10 V 90 150 le = 100 MA, Vce = 10 V Veeisan Collector to Emitter Saturation 0.5 0.5 Vv lc = 50 mA, Ip = 5.0 MA Voltage (Note 5) Cob Output Capacitance 3.5 3.5 pF Vee = 10 V, le = 0, f = 100 kHz NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady slate limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW? C), junction-to-ambient thermal resistance of 200C/AV (derating factor of 50 mW/*C); (TO-236) junction-to-ambient thermal resistance of 357 CW (derating factor of 28 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5 Pulse conditions: length = 300 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set 1144 for MPS6514 & T-1 55 for MPS6515 * Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.Bei ee ee US 3 EFAIRGHIL ED oi ee PNP Small Signal General Purpose Amplifier T= A3 | Vero ... 40 V (Min) PACKAGE he ... 180-300 @ 2.0 mA, 90 (Rin) @ 100 mA MPS6518 70-92 FTSO6518 TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1)- Temperatures Storage Temperature -56 C to 150C Operating Junction Temperature 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25 C Ambient Temperature 0.625 W 0.350 W* 70 C Ambient Temperature 0.400 W 26 C Case Temperature 1.0 W Voltages & Currents Vceo Collector to Emitter Voltage -40V (Note 4) Veso Collector to Base Voltage -40V Veso Emitter to Base Voltage -4.0V lc Collector Current 100 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL| CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown Voltage} 40 v lo =0.5 mA, lp = 0 BVezo Emitter to Base Breakdown Voltage -4.0 Vv le =10 nA, lo =0 Iczo Collector Cutoff Current 50 nA Ves = -30 V, le = 0 1.0 pA Voce =30 V, fe = 0, Ta = 60C Here DC Current Gain (Note 5). 150 | 300 lo =2.0 MA, Vee = -10 V 90 Ic = 100 mA, Voce = -10V Voetsan Collector to Emitter Saturation Voltage -0.5 Vv Ic = 50 mA, Is = 5.0 mA (Note 5) Con Output Capacitance 4.0 pF Vos = 10V, Je = 0, f = 100 kHz NOTES: 1. These ratings are limiting vatues above which the serviceability of any individual semiconductor device may be impaired. 2, These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TQ-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW? C); junction-to-ambient thermal! resistance of 200C/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 28 mW/*C). aS Pulse conditions: length = 300 us; duly cycie = 1% 6. For product family characteristic curves, refer to Curve Set T2165. Package mounted on 99.5% alumina 8 mm x 8mm x 0.6 mm. Rating refers to a high current point where colfector to emitter voltage is lowest. 3-103S4b9b74 OO27384 O ' FAIRCHILD SEMICONDUCTOR a4 Ear MPS6520/FTSO6520 MPS6521/FTSO6521 NPN Small Signal General Purpose Amplifiers Te 2-23 Re EAIRCHILD SES 2 ee Schlumberger Comp y Vceo... 25 V (Min) PACKAGE hee... 100 (Min) (MMPS/FTSO6520), 150 (Min) MPS6520 TO-92 (MPS/FTSO6521) @ 100 vA MPS6521 TO-92 hire... 200-400 (MPS/FTSO6520), 300-600 (MPS/FTSO6521) FTSO6520 TO-236AA/AB @ 2.0mA FTSO6521 TO-236AA/AB o NE... 3.005 (Max) @ Ic = 10 pA, Wide Band ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 25V (Note 4) Vcso Collector to Base Voltage 40V Veso Emitter to Base Voltage 4.0V le Collector Current 100 mA 141 UME) EO ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 6520 6521 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown] 25 25 Vv Ig = 0.5 mA, Is =O Voltage BVeso Emitter to Base Breakdown 4.0 4.0 Vv le = 10 pA, Ie = 90 Voltage leso Collector Cutoff Current 50 50 nA Vos = 30 V, le =0 1.0 1.0 pA Vee = 30 V, le = 0, | Ta = 60C NOTES: 1. These ratings are limiting values above which the serviceability of any individuat semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or tow duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/AW (derating factor of 8.0 mW? C}; junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/ C); (TO-236) junction-to-ambient thermal resistance of 357 CAW (derating factor of 2.8 mW/ C). 4 Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: tength = 300 ps; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T1144. * Package mounted on 99.5% alumina 8 mm x 8mm x 0.6 mm. 3-104T FAIRCHILD SEMICONDUCTOR ay S4b9b74 0027385 bh CPS SHIR RISD DSN TION NI RSI TP DED DPI NPP HOSS SS NTN Neeieet MPS6520/FTSO6520 MPS65217/FTSO6521 T= AN. 23 ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 6520 6521 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX_ | UNITS TEST CONDITIONS hee DC Current Gain 100 150 Io = 100 pA, Vce = 10 V 200 | 400 | 300 | 600 lo = 2.0 MA, Vce = 10 V Veeteat Collector to Emitter Saturation 0.5 0.5 Vv Ip = 50 mA, la = 5.0 MA Voltage (Note 5) Cob Output Capacitance 3.5 3.5 pF Voce = 10 V, le =0, f= 100 kHz NF Noise Figure 3.0 3.0 dB Vee = 5.0 V, le = 10 pA, Rg = 10 ko, Power Bandwidth 15.7 kHz, 3.0 dB pts @ 10 Hz & 10 kHz Geren SEELEY em Sad Te EE PRI I 3-105 xMPSGSS5M T- - 8\~ 23 PNP Small Signal General Purpose Amplifier FAIR 2G HIIL LO A ci anborger Company Pp 625 mW @ Ta= 25C PACKAGE 8 Vceo ... -30 V (Min) MPS6535M TO-92 @ he... 30 (Min) @ 100 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature ~56C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 0.625 W 70 C Ambient Temperature 0.400 W 25 C Case Temperature 1.0 W Voliages & Currents Veco Collector to Emitter Voltage -380 V (Note 4) Vcso Collector to Base Voltage -30 V Veso Emitter to Base Voltage -4.0V Io Collector Current 600 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown Voltage| ~30 Vv Ig = 10 mA, Is = 0 BVcso Collector to Base Breakdown Voltage | -30 Vv le = 10 pA, le = 0 BVeso Emitter to Base Breakdown Voltage 4.0 Vv le = 10 pA, Ie = 0 Icao Collector Cutoff Current 100 nA Vos = 20V, le =0 5.0 vA | Ven = 20V, le = 0, Ta = 60C hre DC Current Gain (Note 5) 30 le = 100 mA, Voce = 1.0 V Veeisan Collector Saturation Voltage (Note 5) 0.5 Vv le = 100 mA, Ils = 10 MA Veetan Base Saturation Voltage (Note 5) ~1.2 Vv le = 100 mA, Ip = 10 MA Cob Output Capacitance 8.0 pF ! Voce =-10V, le = 0, f = 100 kHz NOTES: 4. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 160C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW?" C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys; duty cycle = 2%. 6. For product family characteristic curves, refer to Curve Set T202. 3-106FATRC MPS6560/FTS MiPS6561/FTSO6561 ! MPS6562/F TS O6562 NPN-PNP Small Signal General Purpose Complementary Amplifiers T- IA- A @ Voeo -. MPS/FTS06560/2), PACKAGE 20 V (MPS/FTSO6561) MPS6560 TO-92 fre... 50-200 @ 500 mA (MPS/FTSO6560/2), MPS6561 TO-92 @ 350 mA (MPS/FTSO6561) MPS6562 TO-92 Voge --. 0.5 V (Max) @ 500 mA (MPS/FTSO6560/2), FTSO6560 TO-236AA/AB ABSOLUTE MAXIMUM RATIN GS (Note 1) TO-236AA/AB TO-236AA/AB @ 350 mA (MPS/FTSO6561) FTSO6561 Complements ... MPS/FTSO6560, MPS/FTSO6561 (NPN); FTSO6562 MPS/FTS06562 (PNP) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS FTSO 25C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25C Case Temperature 1.0 W Voltages & Currents 6560/62 6561 Vceo Collector to Emitter Voitage 25V 20V (Note 4) Veso Collector to Base Voltage 25 V 20V Vero Emitter to Base Voltage 40V 4.0V lo Collector Current 600 mA 600 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 6560/62 6561 SYMBOL | CHARACTERISTIC MIN MAX |MIN MAX | UNITS TEST CONDITIONS BVeso Emitter to Base Breakdown 5.0 5.0 Vv je = 100 pA, tc = 0 Voltage Iceo Collector Cutoff Current 100 nA Vce = 25 V, lp =9 100 nA Voce = 20 V, le= 0 Icso Collector Cutoff Current 100 100 nA Vee = 20 V, le = 0 leso Emitter Cutoff Current 100 100 nA Veo = 4.0 V, Ic =O NOTES: These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duly cycle operations. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/* GC}, junction-to-ambient thermal resistance of 200C/W (derating factor of 50 mW? G); (TO-236) junction-to-ambient thermal reststance of 357 C/W (derating factor of 2.8 mW/ C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 ys: duty cycle = 1%. For product family characteristic curves. refar to Curve Set 1124 for MPS6560, MPS6561 & T12 for MPS6562. Package mounted on 99 5% alumina 8 mm x 8mm x 06 mm.FAIRCHILD SEMICONDUCTOR ay pe M@aubab?4 ooe7388 ? MPS6560/FTSO6560 J -A%\-2> MPS6561/FTSO6561 MPS6562/FTSO6562 ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 6560/62 6561 SYMBOL | CHARACTERISTIC MIN MAX |MIN MAX | UNITS TEST CONDITIONS fre DC Current Gain (Note 5) 35 35 lc =10 MA, Vee = 1.0 V 50 50 lc = 100 mA, Vee = 1.0 V 50 | 200 Ic = 500 MA, Voce = 1.0 V 50 | 200 lc = 350 mA, Voce = 1.0 V Veron Collector to Emitter Saturation 05 Vv Ic = 500 mA, ls = 50 mA Voltage (Note 5) 0.5 Vv le = 350 mA, Ile = 35 MA Veeion Base to Emitter On Voltage 1.2 Vv Ic = 500 MA, Vee = 1.0 V (Note ) -1.2 Vv Ilo = 350 mA, Vee = 1.0 V fr Current Gain Bandwidth Product | 60 60 MHz | le =10 MA, Vee = 10 V, f = 30 MHz Cob Output Capacitance 30 30 pF Vee = 10 V, le = 0, f = 100 KHz 3-108 Tors a -LEEEE, FAIRCHILD SEMICONDUCTOR MPS65 NPN Low Level High Gain Amplifier T~24 24 Veco ... -20 V (Min) fire... 250-1000 @ 100 pA ABSOLUTE MAXIMUM RATIN GS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MPS 25C Ambient Temperature 0.625 W 70C Ambient Temperature 0.400 W 25 C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 20V (Note 4) Vceo Collector to Base Voltage 20V Veso Emitter to Base Voltage 3.0V le Collector Current (Continuous) 50 mA FTSO 0.350 W* PACKAGE MPS6571 TO-92 FTSO6571 TO236AA/AB ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN | MAX | UNITS TEST CONDITIONS BVceo Collector to Emitter Breakdown Voltage| 20 Vv le = 1.0 mA, Ip =0 BVcso Collector to Base Breakdown Voltage 25 Vv le = 100 pA, le = 0 IcBo Collector Cutoff Current 50 nA Vop =20V, le =O leso Emitter Cutoff Current 50 nA Vesiorr = 3.0 V, Ilo =0 Nee DC Current Gain (Note 5) 250 | 1000 le = 100 pA, Voce = 5.0 V Veetsati Collector to Emitter Saturation Voltage 0.5 Vv le =10 mA, Is = 1.0 MA (Note 5) Veco Base to Emitter On Voltage 0.8 Vv lo =10 MA, Vce = 5.0 V (Note 5) . fr Current Gain Bandwidth Product 50 MHz | Ilo = 500 wA, Vee = 5.0 V, f = 20 MHz Cop Output Capacitance 4.5 pF Vea = 5.0 V, le = 0, f = 100 kHz NOTES: 1 These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/ C); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/ C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 28 mW/*C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ys; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T144. * Package mounted on $9.5% alumina 8 mm x & mm x 0.6 mm. 3-109FAIRGHILE A Schlumberger Company 3469674 0027390 5 SEieeee rere SES MPSA05/FTSOA0S MPSA06/FTSOA0S NPN Small Signal General Purpose Amplifiers 79 44 6 e @ Veco ... 60 V (Min) (MPS/FTSOA05), 80 V (Min) PACKAGE (MPS/FTSOA06) MPSAOS TO-92 hee ... 80 (Min) @ 10 mA and 100 mA MPSAQ6 TO-92 Vectean ... 0.25 V (Max) @ 100 mA FTSOA0S TO-236AA/AB Complements ... MPS/FTSOA55, MPS/FTSOASE, (PNP) FTSOA0S TO-236AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at MIPS FTSsO 25C Ambient Temperature 0.625 W 0.350 W* 70C Ambient Temperature 0.400 W 25C Case Temperature 1.0W Voltages & Currents A05 A06 Vceo Collector to Emitter Voitage 60 V 80V (Note 4) Veso Collector to Base Voltage 60 V 80 V Veno Emitter to Base Voltage 4.0V 4.0V Ic Collector Current 500 mA 500 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) A05 A06 SYMBOL | CHARACTERISTIC MIN MAX| MIN MAX | UNITS TEST CONDITIONS BV ceo Collector to Emitter Breakdown] 60 80 Vv lo = 1.0 mA, ls =O Voltage BVeso Emitter to Base Breakdown 4.0 4.0 Vv le = 100 pA, Ic = 0 : Voltage t icso Collector Cutoff Current 400 nA Vca = 60 V, le = 0 ; 100 nA Voce = 80 V, le =0 | 1 | L NOTES: These ratings are limiting values above which the servicaability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or tow duty cycle operations. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W {derating factor of 8.0 mW/ C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/C); {TO-236} junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/* C). Rating refers to a high Current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 ys: duty cycle = 1%. For product family characteristic curves, refer to Curve Set T149. Package mounted on 99.5% alumina 8mm x 8 mm x 0.6 mm.MPSA05/FTSOA05 7. 29. -24 MPSA06/FTSOA0G ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) A05 A06 SYMBOL | CHARACTERISTIC MIN MAX | MIN MAX | UNITS TEST CONDITIONS Hee DC Current Gain (Note 5) 50 50 = 100 mA, Voce = 1.0 V 50 50 le =10 mA, Voce = 1.0 V Veeteat) Collector to Emitter Saturation 0.25 0.25 Vv lc = 100 mA, Ils =10 mA Voltage (Note 5) Veeron) Base to Emitter On Voltage 1.2 1.2 Vv le = 100 mA, Vce = 1.0 V fr Current Gain Bandwidth 50 50 MHz | ic= 100 mA, Vce = 1.0 V, Product f = 100 MHz | 5 | ! I Te YET ST OS TT TE ee Ps] 3-111 th Tf i oe