F0118J - OSRAM Opto Semiconductors

F 0118J

GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power)

GaAs Infrared Emitting Diode (950 nm, Enhanced Power)

Vorläufige Date n / Preliminary Da ta

2003-04-10 1

Wesentliche Merkmale

• Typ. Gesamtleistung: 24 mW @ 100 mA im

TOPLED® Gehäuse

•Chipgröße 300 x 300 µm2

•Emissionswellenlänge: 950 nm

•GaAs-LED mit sehr hohem Wirkungsgrad

•Gute Linearität (Ie = f [IF]) bei hohen Strömen

•Gleichstrom- oder Impulsbetrieb möglich

•Hohe Zuverlässigkeit

•Hohe Impulsbelastbarkeit

Anwendungen

•IIR-Fernsteuerung von Fernseh-, Rundfunk-

und Videogeräten, Licht dimm ern

•Gerätefernsteuerungen für Gleich- und

Wechsellichtbetrieb

•Lichtschranken bis 500 kHz

•Sensorik

Typ

Type Bestellnummer

Ordering Code Beschreibung

Description

F 0118J Q67220C1350 Infrarot emittierender Chip, Oberseite Anodenanschluß,

Infrared emitting die, top side anode connection

Features

•Typ. total radiant power: 24 mW @ 100 mA in

TOPLED® package.

•Chip size 300 x 300 µm2

•Peak wavelength: 950 nm

•Very highly efficient GaAs LED

•Good linearity (Ie = f [IF]) at high currents

•DC or pulsed operations are possible

•High reliability

•High pulse handling capability

Applications

•IR remote control for hifi and TV sets, video

tape recorder, dimmers

•Remote control for steady and varying

intensity

•Light-reflection switches (max. 500 kHz)

•Sensor technology

2003-04-10 2

F 0118J

Elektrische Werte (TA = 25 °C)

Electrical values1) (TA = 25 °C)

Bezeichnung

Parameter Symbol

Symbol Wert

Value2) Einheit

Unit

min. typ. max.

Emissionswellenlänge

Peak wavelength

IF = 10 mA

λpeak 950 nm

Spektrale Bandbreite bei 50% von Imax,

Spectral bandwidth at 50% of Imax

IF = 10 mA

∆λ 55 nm

Schaltzeiten, Ie von 10% auf 90% und von 90% auf

10%, bei IF = 100 mA, RL = 50 Ω

Switching times, Ie from 10% to 90% a nd from 90%

to 10%, IF = 100 mA, RL = 50 Ω

tr, tf0.5/0.4 µs

Sperrspannung

Reverse voltage

IR = 1µA

VR5V

Durchlaβspannung

Forward voltage

IF = 60 mA

VF1.3 1.5 V

Strahlungsleistung

Radiant Power3)

IF = 20 mA

Φe2.4 mW

Photostrom (Spezifikationsparameter Helligkeit)

Photocurrent (specified parameter brightness)

IF = 10 mA

Ie0.08 a.u.

1) Measurement l i mit s d e scribe actual set t in gs an d d o not include measuremen t unce r ta in ti es. Each waf er a nd f ragment

of a wafer is subj ect to final testi ng. The wafer o r its pieces are i ndividually at tached on foils (ri ngs). Sample chips a re

picked from each foi l and pla ced on a sp ecial carri er for measuremen t purpo ses. The sampli ng densi ty is one chip p er

2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample

fails in that measurement, an area of 0,5 cm² around each fail ed sample is marked by pen. All el. values are referenced

to the vendor's measurement system (correlation to customer product(s) is required)

2) Typical (re fere d to as ty p.) dat a a re def i ned as l on g- te rm production mean values and ar e onl y given for informa tion .

This is no t a specified value

3) Radiant power is measured on TO-18 header in integrating sphere.

F 0118J

2003-04-10 3

Mechanische Werte

Mechanical values

Bezeichnung

Parameter Symbol

Symbol Wert

Value1) Einheit

Unit

min. typ. max.

Chipkantenlänge (x-Richtun g)

Length of chip edge (x-direction) Lx0.28 0.30 0.32 mm

Chipkantenlänge (y-Richtun g)

Length of chip edge (y-direction) Ly0.28 0.30 0.32 mm

Durchmesser des Wafers

Diameter of the wafer D76.2 mm

Chiphöhe

Die height H220 240 260 µm

Bondpaddurchmesser

Diameter of bondpad d130 µm

Weitere Informationen

Additional information2)

Vorderseitenmetallisierung

Metallization frontside Aluminium

Aluminum

Rückseitenmetallisierung

Metallization backside AuGe Eutektikum

AuGe eutectic alloy

Trennverfahren

Dicing Sägen

Sawing

Verbindung Chip - Träger

Die bonding Legieren

Eutectic bonding

1) Typical (ref ered t o a s typ.) d at a are def in ed a s long-term pro duc ti on mean v al ues a nd a r e onl y g iv en f or inf orma tion.

This is no t a specified value

2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection

A63501-Q0013-N001-*-76G3:

The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The

visual inspec tion of chip backs ide is p erformed by e ye fo r 100% of the area of ea ch wafer. I f decisio ns (goo d/bad) a re

not possibl e additional a stereo microscop e with incident l ight with 40x-80 x magnificatio n is used. Areas grea ter than

¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from

backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip

frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of

each wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2

cm² which ha ve an amount of more th an 25% failed dies will be marked. The quality inspection (final visual inspection)

is performed by production. An additional visual inspection step as special release procedure by QM after the final

visual inspection is not in stalled.

F 0118J

2003-04-10 4

Grenzwert1)

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Maximaler Betriebstemperaturbereich

Maximum Operating temperature range Top -40...+85 °C

Maximaler Lagertemperaturbereich

Maximum storage temperature range Tstg -40...+85 °C

Maximaler Durchlaßstrom

Maximum forward current IF60 mA

Maximaler Stoßstrom

Maximum surge current

tp = 10 µs, D = 0.005

IS1A

Maximale Sperrschichttemperatur

Maximum junction temperature Tj125 °C

1)Maximum ratings are strongly package dependent and may differ between different packages. The values given

represent the chip in a TO-18 package.

F 0118J

2003-04-10 5

Relati ve Sp ectral Emission1) IFrel= f (λ)

TA = 25 °C

Forward Cu rrent1)

IF= f (VF), Single pulse, tp = 20 µs, TA = 25 °C

1) Based on typ.(see page 2, footnote 2 for explanation)

data measured in OSRAM Opto Semiconductor’s

TOPLED® package.

Radiant Intensity1) Ie/Ie(100mA) = f (IF)

TA = 25 °C, single pulse: tp = 20 µs

Permissible Pulse Po wer1)

Duty cycle D = parameter, TA = 25 °C

OHR01938

rel

0880 920 960 1000

1060

100

OHR01554

-3

-2

-1

0123456V8

OHR01551

10-3

-2

10-1

100

101

102

Ιe 100 mA

-2

10 -1

10 0

10 1

10A

OHR00860

-5

0.2

0.5

0.1

0.005

0.01

0.02

0.05

-4

-3

-2

-1

10s

2003-04-10 6

F 0118J

Maßzeichnung

Chip Outlines

Maße werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as

follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or

detaile d sp ec if ic at ion.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substanc es . For information on the types in question ple as e c ont ac t our s ales organization.

Handling and Storage Conditions:

The hermetically sealed shipment lot shall be opened under temperature and moisture controlled cleanroom

environment only. Customer has to follow the according rules for disposition of material that can be hazardous for

humans and environment.

Packing

Chips are placed on a blue foil, wh ic h is fixed in a yellow frame of 5” diameter.

For shipment the wafers of a shipment lot are arranged to stacks. The top and bottom of the stack is covered by a

dummy disk to protect the top and bottom wafer from damage. The whole package is fixed by rubber strings and

hermetically sealed in a plastic bag for storage and shipment. Please use the recycling operators known to you. We can

also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is

sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are

not oblig ed t o ac c ept , we shall have to invoice y ou f or any costs incurred.

Further Conditions:

If not otherwise arranged, the “General Conditions for the supply of products and services of the electrical and

electronics industry” apply for any shipment, just as the Supplier Addendum " Chip business" to the “General Conditions

for the supply of products and services of the electrical and electronics industry”. If this document is not familiar to you,

please request it at our neares t s ales office.

Com pon en ts used in life-su pport device s or systems must be ex pressly autho r ized b y us for such purpose!

Critical components2), may only be used in life-support devices or systems3) with the express written approval of

OSRAM OS.

1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.

This is no t a specified val ue.

2)A critical comp onent is a component used in a life-supp ort device or system whose fail ure can reasonably be expec ted to

cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

3)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered

GCOY6878

0.24 (0.0094)

0.13 (0.0051)

p-contact

n-contact

0.3 (0.0118)