BSS123W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID TA = +25C 170mA making it ideal for high efficiency power management applications. * * * * * * * * Applications Mechanical Data * * * * * V(BR)DSS RDS(ON) 100V 6.0 @ VGS = 10V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) * * * * D SOT323 D G G S S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS123W-7-F Notes: Compliance Standard Case SOT323 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Date Code Key Year 2002 Code N Month Code Jan 1 2003 P 2004 R Feb 2 BSS123W Document number: DS30368 Rev. 12 - 2 Mar 3 K23 YM Marking Information 2005 S 2006 T Apr 4 K23 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) ... ... May 5 2012 Z 2013 A Jun 6 1 of 5 www.diodes.com Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D 2017 E Oct O 2018 F Nov N 2019 G Dec D August 2014 (c) Diodes Incorporated BSS123W Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS 100 V Drain-Gate Voltage RGS 20K VDGR 100 V Gate-Source Voltage Continuous VGSS 20 V Drain Current (Note 5) Continuous Pulsed ID IDM 170 680 mA Symbol Value Units PD 200 mW RJA 625 C/W TJ, TSTG -55 to +150 C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 100 V VGS = 0V, ID = 250A A nA VDS = 100V, VGS = 0V VDS = 20V, VGS = 0V Zero Gate Voltage Drain Current IDSS 1.0 10 Gate-Body Leakage, Forward IGSSF 50 nA VGS = 20V, VDS = 0V VGS(th) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA RDS(ON) 6.0 10 VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A Forward Transconductance gFS 80 370 mS Drain-Source Diode Forward Voltage VSD 0.84 1.3 V Input Capacitance Ciss 29 60 pF Output Capacitance Coss 10 15 pF Reverse Transfer Capacitance Crss 2 6 pF Turn-On Rise Time tr 8 ns Turn-Off Fall Time tf 16 ns Turn-On Delay Time tD(ON) 8 ns Turn-Off Delay Time tD(OFF) 13 ns ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = 10V, ID = 0.17A, f = 1.0KHz VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS (Note 7) VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS(Note 7) Notes: VDD = 30V, ID = 0.28A, RGEN = 6.0, VGS = 10V 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. BSS123W Document number: DS30368 Rev. 12 - 2 2 of 5 www.diodes.com August 2014 (c) Diodes Incorporated BSS123W 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 4 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 1.6 1.2 0.2 0.3 0.4 0.5 0.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current 1.2 2.2 VDS = VGS ID = 250A 1.1 1 0.9 0.8 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.7 -50 0.4 -50 0 -25 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 4 On-Resistance Variation with Temperature 50 -25 25 0 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 3 Gate Threshold Variation with Temperature 50 250 40 200 PD, POWER DISSIPATION (mW) C, CAPACITANCE (pF) 2.0 0.8 0.1 5 RDS(ON), NORMALIZED ON-RESISTANCE VGS(th), NORMALIZED THRESHOLD VOLTAGE 2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 0.7 30 20 10 0 0 10 20 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 5 BSS123W Document number: DS30368 Rev. 12 - 2 150 100 25 3 of 5 www.diodes.com 50 0 0 200 100 TA, AMBIENT TEMPERATURE (C) Fig. 6 Power Derating Curve, Total Package August 2014 (c) Diodes Incorporated BSS123W Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. H SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.650 BSC F 0.375 0.475 0.425 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.00 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11 a 8C All Dimensions in mm K M a D J L A C B G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. Y Z C X BSS123W Document number: DS30368 Rev. 12 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 4 of 5 www.diodes.com August 2014 (c) Diodes Incorporated BSS123W IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2014, Diodes Incorporated www.diodes.com BSS123W Document number: DS30368 Rev. 12 - 2 5 of 5 www.diodes.com August 2014 (c) Diodes Incorporated