BSS123W
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summa r y
V(BR)DSS RDS(ON)
I
D
TA = +25°C
100V
6.0Ω @ VGS = 10V
170mA
Description
This MOSFET is designed to minimize the on-
state
resistance (RDS(ON))
and yet maintain superior switching performance,
m aking it ideal for high eff ici ency power managem ent applic ations.
Applications
• Small Servo Motor Control
• Power MOSFET Gate Drivers
• Switching Applications
Features
• Low Gate Threshold Voltage
• Low Input Capacit ance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammabilit y Classification Rating 94V-0
• Moisture Sensitivi t y: Level 1 per J-STD-020
• Terminal Connecti ons: See Diagram
• Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderabl e per MIL-STD-202, Method 208
• Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Compliance
Case
Standard
SOT323
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2002
2003
2004
2005
2006
…
2012
2013
2014
2015
2016
2017
2018
2019
Code
N P R S T … Z A B C D E F G
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT323
Top View
Equivalent Circui t
Top View
GS
D
e3
D
S
G
K23
YM
K23 = Product Type Marking Code
YM = Date Code Marking
Y
or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
BSS123W
Document number: DS30368 Rev. 12 - 2 1 of 5
www.diodes.com August 2014
© Diodes Incorporated
BSS123W
Maximum Ratings (@TA = +25°C, unless otherwise specifi ed. )
Characteristic
Symbol
Value
Units
Drain-Source V olt age
VDSS
100 V
Drain-Gate Voltage RGS
≤
20KΩ
VDGR
100 V
Gate-Source Voltage Continuous
VGSS
±
20
V
Drain Current (Note 5) Continuous
Pulsed ID
IDM
170
680 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified. )
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
625
°C/W
Operating and Storage Tem perature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condi tion
OFF CH ARACTERISTICS (Note 6)
Drain-Source B reakdown Volt age BV
DSS
100 V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current IDSS 1.0
10 µA
nA VDS = 100V, VGS = 0V
VDS = 20V, VGS = 0V
Gate-Body Leakage, Forward
IGSSF
50
nA
VGS = 20V, VDS = 0V
ON CHARACTERIS TICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.8
1.4
2.0
V
VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON)
6.0
10 Ω VGS = 10V, ID = 0.17A
V
GS
= 4.5V, I
D
= 0.17A
Forward Transconduct ance
gFS
80
370
mS
VDS = 10V, ID = 0.17A, f = 1.0KHz
Drain-Source Di ode F orward Volt age
VSD
0.84
1.3
V
VGS = 0V , IS = 0.34A
DYNAMIC CH ARACTERISTICS (Note 7)
Input Capacitance
C
iss
29
60
pF
VDS = 25V, VGS = 0V, f = 1. 0MH z
Output Capacit ance C
oss
10 15 pF
Reverse Transfer Capaci t ance Crss 2 6 pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Rise Time
tr
8 ns
VDD = 30V, ID = 0.28A,
RGEN = 6.0Ω, VGS = 10V
Turn-Off Fall Time
tf
16 ns
Turn-On Delay Time t
D(ON)
8 ns
Turn-Off Delay Time t
D(OFF)
13 ns
Notes: 5. Part mounted on FR-4 board with recom m end ed pad layout , whi ch can be found on our webs ite at htt p:// w ww. di od es .com .
6. Short duration pulse test used to minimize self-heating ef fe ct.
7. Guaranteed by design. Not subject to production testing.
BSS123W
Document number: DS30368 Rev. 12 - 2 2 of 5
www.diodes.com August 2014
© Diodes Incorporated
BSS123W
0
0.2
0.7
01345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1 0.2
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variati on with Gat e Voltage
and Drain-Source Cu rrent
D
2.0
2.4
0.3 0.4 0.5 0.6
0.7
0.8
0.9
-50 0 75 100 125 150
V NORMALIZED THRESHOLD VOLTAGE
GS(th),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25 25 50
V = V
I = 250 A
DS GS
Dµ
0.4
0.8
1.2
-50 075 100 125 150
R NORMALIZED ON-RESISTANCE
DS(ON),
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25 25 50
0.6
1
1.4
2
0
50
0515 20 25
C, CAPACITANCE (pF)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
0
50
100
100 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 6 Power Der ating C urve, Tot al Package
A
150
200
250
0
BSS123W
Document number: DS30368 Rev. 12 - 2 3 of 5
www.diodes.com August 2014
© Diodes Incorporated
BSS123W
Package Ou t lin e Dimensions
Please see AP02002 at http://www.diodes.c om/ dat asheets / ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.c om/ dat asheets / ap02001.pdf for lat est versi on.
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.650 BSC
F
0.375
0.475
0.425
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.00
0.10
0.05
K
0.90
1.00
0.95
L
0.25
0.40
0.30
M
0.10
0.18
0.11
a
8°C
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
XE
Y
C
Z
CB
K
J
M
H
L
A
G
D
a
BSS123W
Document number: DS30368 Rev. 12 - 2 4 of 5
www.diodes.com August 2014
© Diodes Incorporated
BSS123W
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(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTIO N).
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Copyright © 2014, Diodes Incorporated
www.diodes.com
BSS123W
Document number: DS30368 Rev. 12 - 2 5 of 5
www.diodes.com August 2014
© Diodes Incorporated