WTE
Pb
DF150S – DF1510S
POWER SEMICONDUCTORS
1.5A SURFACE MOUNT GLASS PAS S IVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction G
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability - +
Designed for Surface Mount Application B ~ ~ A D E
Plastic Material – UL Recognition Flammability
Classification 94V-O C
L DF-S
Dim Min Max
A 7.80 8.50
B 6.20 6.50
C 0.20 0.35
D 0.076 0.33
E — 10.40
G 1.02 1.53
H 8.13 8.80
J 2.20 2.50
K 5.00 5.20
L 1.00 1.20
All Dimensions in mm
H
Mechanical Data J
Case: DF-S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 K
Polarity: As Marked on Case
Weight: 0.38 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol DF
150S DF
151S DF
152S DF
154S DF
156S DF
158S DF
1510S Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TA = 40°C IO 1.5 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 50 A
Forward Voltage per element @IF = 1.5A VFM 1.1 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 125°C IRM 5.0
500 µA
Typical Junction Capacitance per element (Note 1) Cj 25 pF
Typical Thermal Resistance per leg (Note 2) RθJA
RθJL 40
15 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 13mm2 copper pad.
DF150S – DF1510S 1 of 4 © 2006 Won-Top Electronics