Philips Semiconductors Product specification Damper-Modulator fast, high-voltage FEATURES * Low forward volt drop * Ultra fast switching * Soft recovery characteristic * High thermal cycling performance * Isolated mounting tab BYM358X SYMBOL damper QUICK REFERENCE DATA modulator 1 3 2 GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in PC monitors. The BYM358X contains diodes with performance characteristics designed specifically for applications from 32kHz to 120kHz DAMPER MODULATOR VR=1500 V VR=600 V VF 1.5 V VF 1.08 V IF(peak) =7 A IF(peak) = 7 A IFSM 66 A IFSM 70 A trr 170 ns trr 60 ns PINNING PIN SOT186A DESCRIPTION case 1 damper cathode 2 common anode/cathode 3 modulator anode. The BYM358X series is supplied in the conventional leaded SOT186A package. 1 2 3 LIMITING VALUES Tj = 25 C unless otherwise stated DAMPER SYMBOL PARAMETER VRSM MIN MAX MIN MAX UNIT - 1500 - 600 V VRRM Peak non-repetitive reverse voltage. Peak repetitive reverse voltage - 1500 - 600 V VRWM Crest working reverse voltage - 1300 - 600 V IF(peak) Peak forward current 31-70 kHz monitor. - 7 - 7 A IF(RMS) RMS forward current sinusoidal;a=1.57 - 15.7 - 14.1 A IFSM Peak non-repetitive forward current t = 10 ms t = 8.3 ms sinusoidal;with reapplied VRWM(MAX) - 60 66 - 70 77 A A Tstg TJ Storage temperature Operating junction temperature -40 - 150 150 -40 - 150 150 C C March 2000 CONDITIONS MODULATOR 1 Rev 1.000 Philips Semiconductors Product specification Damper-Modulator fast, high-voltage BYM358X ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 10 - pF THERMAL RESISTANCES DAMPER MODULATOR SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT Rth j-hs Thermal resistance junction to heatsink with heatsink compound - 4.8 - 5.5 K/W Rth j-a Thermal resistance junction to ambient in free air. 55 - 55 - K/W STATIC CHARACTERISTICS OF DAMPER Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP MAX. UNIT VF Forward voltage IR Reverse current IF = 6.5 A IF = 6.5 A; Tj = 125C VR = VRWM VR = VRWM Tj = 100 C 1.3 1.2 10 300 1.6 1.5 100 500 V V A A STATIC CHARACTERISTICS OF MODULATOR Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP MAX. UNIT VF Forward voltage IR Reverse current. IF = 8 A IF = 8 A; Tj = 150C IF = 20 A VR = VRWM VR = VRWM Tj = 100 C 1.2 0.95 1.3 10 100 1.3 1.08 1.45 50 350 V V V A A March 2000 2 Rev 1.000 Philips Semiconductors Product specification Damper-Modulator fast, high-voltage BYM358X ELECTRICAL CHARACTERISTICS OF DAMPER Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT trr Reverse recovery time 130 170 ns Qs Vfr Reverse recovery charge Peak forward recovery voltage IF = 1 A; VR 30 V; -dIF/dt = 50 A/s 2 A,30 V,20 A/s IF = 6.5 A; dIF/dt = 50 A/s 0.65 29 0.9 - C V TYP. MAX. UNIT 35 60 ns 3.0 5.5 A 40 5.0 70 - nC V ELECTRICAL CHARACTERISTICS OF MODULATOR Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS trr Reverse recovery time Irrm Peak reverse recovery current Qs Vfr Reverse recovery charge Peak forward recovery voltage IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C 2 A,30 V,20 A/s IF = 10 A; dIF/dt = 10 A/s March 2000 3 Rev 1.000 Philips Semiconductors Product specification Damper-Modulator fast, high-voltage I dI F BYM358X I F F dt t rr time time VF Q I I R 10% s 100% V fr VF rrm time Fig.4. Definition of Vfr Fig.1. Definition of trr, Qs and Irrm Modulator I dI F 1000 F Qs / nC dt 10A 2A trr IF=2A time 10 Qs I I R 25% 25 C 150 C 100% rrm 1 1 Fig.2. Definition of trr, Qs and Irrm Damper 10 10A 100 -diF / dt 10 100 Fig.5. Modulator maximum Qs at Tj = 25C and 150C Irrm / A 100 Cd / pF IF=10A 1 IF=1A 10 0.1 Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 1 100 1 Fig.3. Modulator maximum Irrm at Tj = 100C March 2000 10 VR / V 100 1000 Fig.6. Modulator typical junction capacitance Cd at f = 1 MHz; Tj = 25C 4 Rev 1.000 Philips Semiconductors Product specification Damper-Modulator fast, high-voltage 10 BYM358X Transient thermal impedance, Zth j-hs (K/W) 1 1 0.1 0.1 PD 0.01 tp D= 10us tp T 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359F 10s Fig.10. Damper transient thermal impedance Zth = f(tp) BYW29 IF / A D= T 0.001 1us 10s Fig.7. Modulator transient thermal impedance Zth = f(tp) 30 tp PD 0.01 t T 0.001 1us Transient thermal impedance, Zth j-hs (K/W) 10 IF / A BY359 30 Tj=150 C Tj=125C Tj=25 C Tj=25C 20 20 typ max 10 typ 10 max 0 0 0.5 1 VF / V 1.5 2 0 0 1.0 2.0 VF / V Fig.8. Modulator typical and maximum forward characteristic; IF = f(VF); parameter Tj Fig.11. Damper forward characteristic IF = f(VF); parameter Tj trr / ns 1000 10A 100 1A Tj = 25 C Tj = 150 C 10 10 -diF/dt 100 Fig.9. Modulator maximum trr measured to 25% of Irrm; Tj = 25C and 150C March 2000 5 Rev 1.000 Philips Semiconductors Product specification Damper-Modulator fast, high-voltage BYM358X MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 max. 19 max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 2000 6 Rev 1.000 Philips Semiconductors Product specification Damper-Modulator fast, high-voltage BYM358X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 2000 7 Rev 1.000