Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop DAMPER MODULATOR
• Ultra fast switching
• Soft recovery characteristic VR=1500 V VR=600 V
• High thermal cycling
performance VF 1.5 V VF 1.08 V
• Isolated mounting tab IF(peak) =7 A IF(peak) = 7 A
IFSM 66 A IFSM 70 A
trr 170 ns trr 60 ns
GENERAL DESCRIPTION PINNING SOT186A
Combined damper and modulator PIN DESCRIPTION
diodes in an isolated plastic
envelopeforhorizontaldeflectionin 1 damper cathode
PC monitors.
The BYM358X contains diodes 2 common anode/cathode
with performance characteristics
designed specifically for 3 modulator anode.
applications from 32kHz to 120kHz
The BYM358X series is supplied in
the conventional leaded SOT186A
package.
LIMITING VALUES
Tj = 25 ˚C unless otherwise stated DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX UNIT
VRSM Peak non-repetitive reverse - 1500 - 600 V
voltage.
VRRM Peak repetitive reverse voltage - 1500 - 600 V
VRWM Crest working reverse voltage - 1300 - 600 V
IF(peak) Peak forward current 31-70 kHz monitor. - 7 - 7 A
IF(RMS) RMS forward current sinusoidal;a=1.57 - 15.7 - 14.1 A
IFSM Peak non-repetitive forward t = 10 ms - 60 - 70 A
current t = 8.3 ms - 66 - 77 A
sinusoidal;with
reapplied
VRWM(MAX)
Tstg Storage temperature -40 150 -40 150 ˚C
TJOperating junction temperature - 150 - 150 ˚C
13
2
damper modulator
123
case
March 2000 1 Rev 1.000
Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES DAMPER MODULATOR
SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink - 4.8 - 5.5 K/W
heatsink compound
Rth j-a Thermal resistance junction to in free air. 55 - 55 - K/W
ambient
STATIC CHARACTERISTICS OF DAMPER
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP MAX. UNIT
VFForward voltage IF = 6.5 A 1.3 1.6 V
IF = 6.5 A; Tj = 125˚C 1.2 1.5 V
IRReverse current VR = VRWM 10 100 µA
VR = VRWM 300 500 µA
Tj = 100 ˚C
STATIC CHARACTERISTICS OF MODULATOR
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP MAX. UNIT
VFForward voltage IF = 8 A 1.2 1.3 V
IF = 8 A; Tj = 150˚C 0.95 1.08 V
IF = 20 A 1.3 1.45 V
IRReverse current. VR = VRWM 10 50 µA
VR = VRWM 100 350 µA
Tj = 100 ˚C
March 2000 2 Rev 1.000
Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
ELECTRICAL CHARACTERISTICS OF DAMPER
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
trr Reverse recovery time IF = 1 A; VR 30 V; 130 170 ns
-dIF/dt = 50 A/µs
QsReverse recovery charge 2 A,30 V,20 A/µs 0.65 0.9 µC
Vfr Peak forward recovery voltage IF = 6.5 A; 29 - V
dIF/dt = 50 A/µs
ELECTRICAL CHARACTERISTICS OF MODULATOR
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
trr Reverse recovery time IF = 1 A; VR 30 V; 35 60 ns
-dIF/dt = 100 A/µs
Irrm Peak reverse recovery current IF = 10 A to VR 30 V; 3.0 5.5 A
dIF/dt = 50 A/µs; Tj = 100˚C
QsReverse recovery charge 2 A,30 V,20 A/µs4070nC
Vfr Peak forward recovery voltage IF = 10 A; 5.0 - V
dIF/dt = 10 A/µs
March 2000 3 Rev 1.000
Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
Fig.1. Definition of trr, Qs and Irrm
Modulator
Fig.2. Definition of trr, Qs and Irrm
Damper
Fig.3. Modulator maximum Irrm at Tj = 100˚C
Fig.4. Definition of Vfr
Fig.5. Modulator maximum Qs at Tj = 25˚C and 150˚C
Fig.6. Modulator typical junction capacitance Cd at
f = 1 MHz; Tj = 25˚C
Qs100%
10%
time
dI
dt F
IR
IF
Irrm
trr
time
time
VF
Vfr
VF
IF
100%
time
dI
dt F
IR
IF
Irrm
trr
25%
Qs
Qs / nC
1
10
100
1000
110100
-diF / dt
IF=2A
10A
2A
10A
25 C
150 C
10
1
0.1
0.01
Irrm / A
110 100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100 C
Cd / pF
1
10
100
1 10 100 1000
VR / V
March 2000 4 Rev 1.000
Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
Fig.7. Modulator transient thermal impedance
Zth = f(tp)
Fig.8. Modulator typical and maximum forward
characteristic; IF = f(VF); parameter Tj
Fig.9. Modulator maximum trr measured to 25% of Irrm;
Tj = 25˚C and 150˚C
Fig.10. Damper transient thermal impedance
Zth = f(tp)
Fig.11. Damper forward characteristic IF = f(VF);
parameter Tj
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYV29F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BY359F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
0 1 2
30
20
10
0
typ max
IF / A
0.5 1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
0
30
20
10
0 1.0 2.0
IF / A
VF / V
max
typ
Tj=125C
Tj=25C
BY359
trr / ns
10
100
1000
10 100
-diF/dt
1A
1
0A
Tj = 25 C
Tj = 150 C
March 2000 5 Rev 1.000
Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
123
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max. 19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
1.3
March 2000 6 Rev 1.000
Philips Semiconductors Product specification
Damper-Modulator BYM358X
fast, high-voltage
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 2000 7 Rev 1.000