Rugged Power MOSFETs File Number 1995 Avalanche Energy Rated N-Channel Power MOSFETs 3.5A and 4.0A, 60V-100V fos(on) = 0.60 and 0.80 Features: I Single pulse avalanche energy rated i SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance The IRF510R, IRF511R, IRF512R and {RF513R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings IRFS10R, IRF511R, IRF512R, IRF513R N-CHANNEL ENHANCEMENT MODE oO 9208-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE Lt DRAIN oor DRAIN (FLANGE) | O TOP VIEW GATE 92CS-39826 JEDEC TO-220AB Parameter IRF510R IRF51iR (RF512R IRF513R Units Vos Drain - Source Voltage @ 100 60 100 60 Vv Voor Drain - Gate Voltage (Res = 20 KQ) @ 100 60 100 60 Vv lo @ Tc = 26C Continuous Drain Current 4.0 4.0 3.5 3.5 A lp @ Te = 100C Continuous Drain Current 2.5 2.5 2.0 2.0 A lon Pulsed Drain Current @ 16 16 14 14 A Ves Gate - Source Voltage +20 v Po @ Tc = 26C Max. Power Dissipation 20 (See Fig. 14) Ww Linear Derating Factor 0.16 (See Fig. 14) Ww/C Eu Single Pulse Avalanche Energy Rating @ 19 mj the Sern ante a age 55 0 160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 8-77Rugged Power MOSFETs IRFS10R, IRF511A, IRF512R, IRF513R Electrical Characteristics @ Tc = 25C (Uniess Otherwise Specified) + Parameter Type Min. Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRFS10R = IRF512R | 100 - - Vv Vas = OV IRF511R - IRF513R| 8 - - Vv Ip = 250uA Vesm Gate Threshold Voltage ALL 2.0 = 40 Vos = Vas, ln = 2500 A less Gate-Source Leakage Forward ALL _ _ 500 nA Vas = 20V lass Gate-Source Leakage Reverse ALL _ _ -500 nA Vas = -20V loss Zero Gate Voltage Drain Current A = _ 250 pA Vos = Max. Rating, Vas = OV. tL [= [ooo | ua | Vos = Max. Rating x 0.8, Vos = OV, Te = 125C fon On-State Drain Current @ IRF510R mmFsuin| 9 | {| | A Vos > toton X Rosion max, Vas = 10V tRFS12R| 3g _ _ A IRF513R . Rosion Static Drain-Source On-State , IRFS10R| 05 06 Q Resistance @ IRF511R " : = = Ves = 10V, In = 2.0A IRF512R _ 06 08 Q IRF513R 2 " Qn Forward Transconductance @ ALL 1.0 15 _ S()_| Vps > lotom X Rosionmax, Ip = 2.0A _ | Cian Input Capacitance ALL = 135 = PF | Vos = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL ~ 80 =_ pF See Fig. 10 Cre Reverse Transter Capacitance ALL - 20 - pF toon ___ Turn-On Oslay Time ALL = 19 20 ns Voo = 0.5 BVoss, fo = 2.0A, Zo = 500 t, Rise Time ALL _ 15 25 ns See Fig. 17 toon Turn-Off Delay Time ALL = 15 25 ns (MOSFET switching times are essentially tt Fall Time ALL ~ 10 20 ns independent of operating temperature.) Q Total Gate Charge ALL _ 5.0 rr nc Ves = 10V, ln = 8.0A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) _ . See Fig. 18 for test circuit. (Gate charge is Q Gate-Source Charge ALL _ 20 nc pssanually independent of operating - Qua ___Gate-Drain (Miller) Charge ALL | 30 | nc maakt Lo internal Drain Inductance - 3.5 _ nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL _ 45 - nH Measured from the inductances. drain tead, 6mm (0.25 6 in.) from package to Lo center of die. Ls Internal Source Inductance ALL _- 7.5 - nH Measured from the 6 source lead, 6mm us (0.25 in.) from : package to source sate. eases bonding pad. Thermal Resistance RaJC Junction-to-Case ALL = = 6.4 ecw RnCS Case-to-Sink ALL _ 1.0 = C/W _| Mounting surface flat, smooth, and greased. ReJA Junction-to-Ambient ALL _ _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current (RFS510R | _ 40 A Modified MOSFET symbol (Body Diode) IRF511R . showing the integral IRF512R 35 A reverse P-N junction rectifier. g IRF513R| ~~ : Iona Pulse Source Current IRF510R | __ _ 16 A 6 (Body Diode) @ IRF511R IRF12R IRF513R _ _ 14 A ente-asese Vso Diode Forward Voltage @ IRES10R _ _ 25 v Te = 25C, ts = 4.0A, Ves = OV IRSA} | | 20 | V_ | Te=25C, ls=3.5A, Vos = OV te Reverse Recovery Time ALL _ 230 ~ ns Ts = 150C, Ie = 4.0A, die/dt = 100A/ys Quan Reverse Recovered Charge ALL = 1.4 = BC Ts = 150C, Ir = 4.0A, dis/dt = 100A/yss ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ Ty = 26C to 190C. Pulse Test: Pulse width < 300ys, Duty Cycle <= 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = 25V, starting T, = 25C, L = 910g, Rys = 250, Ipeax = 5.62. See figures 15, 16 6-78Rugged Power MOSFETs Zensctll/ Ryne, NORMALIZED EFFECTIVE TRANSIENT THEAMAL IMPEDANCE (PEA UNIT} ip. ORAIN CURRENT (AMPERES) fp, ORAIN CURRENT AMPERES IRF510R, IRF511R, IRF512R, IRF513R 12 v Vos > 'Otont Rosion) max. oe 56 as 40 32 14 Ip, ORAIN CURRENT (AMPERES) 16 a8 4 0 10 20 x a 50 a 2 4 6 a 19 Vig. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vag. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics AREA IS LIMITED BY Roston) a 3 @ 2 =z < c z z = = > 3 z < < a 2 Te = 15 Ty= 150C MAX 10 ms Ang = 6: ri SINGLE PULSE 100 ons IRFSIOR, 6 05 10 15 20 25 30 35 40 45 50 10 2 5 Ww 20 500 Vag, DRAIN-TO- SOURCE VOLTAGE {VOLTS} Vos, GRAIN. TO- SOURCE VOLTAGE (vot TS} Fig. 3 ~ Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area SP LPL - 1. OUTY FACTOR, 0+ z . 2. PER UNIT BASE Ringe * 6.4 DEG. CW. THERMAL IMPEDANCE} 3. Ty Te Pow Zinacitt. , 2 5 wt 2 5 yd 2 5 we 2 6 wl 2 5 1 2 5 10 ty, SQUARE WAVE PULSE QUAATION (SECONDS) Fig. 5 Maxi Effective Ti ient Thermal f d: J ion-to-Case Vs. Pulse Duration 6-79Rugged Power MOSFETs IRFS10R, JRF511R, IRF512R, IRF513R 6-80 DRAIN-TO-SOURCE BREAKDOWN VOLTAGE BVoss 2 & Hs. TRANSCONDUCTANCE (SIEMENS) 0 08 16 24 32 40 48 56 64 72 80 Jp, ORAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current V2 (NORMALIZED) : = = =~ ra 2 8 2 s & 8 2 Fa a & & 20 0 2 4 60 80 100 120 140 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature =O f= 1 MHz | I Cing = Cop + Ogg, Cys SHORTED Crm * Cog Com = Cds * ont Ces gy C, CAPACITANCE (pF) Qo 10 20 Eo) a0 sa Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage ing. REVERSE ORAIN CURRENT (AMPERES) 01 0 G2 O4 O06 O8 10 12 14 16 18 20 Vgq. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 ~ Typical Source-Drain Diode Forward Voltage 2.80 N-TO-SOURCE ON RESISTANCE (WORMALIZED} zr or cr yg 8 & 6 2 BB Rpston). DRAI 2 a 80 40 -20 #0 2 4 60 80 100 120 140 Ty, JUNCTION TEMPERATURE (c) Fig. 9 -- Normalized On-Resistance Vs. Temperature i = B0V, IRFS10A, $12R Vgs. GATE-TO-SQUACE VOLTAGE (VOLTS! Ip = 8A FOR TEST CIRCUIT SEE FIGURE 18 0 2 4 6 a 0 Q,, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageRugged Power MOSFETs 20 , r = Rosion) MEASURED WITH CURRENT PULSE OF 3 2A SPC URATION. INITIAL Ty = 25C, (HEATING z EFFECT OF 2.0 us PULSE (S MINIMAL} 3 we = Zs a & = 2 Vgg = Inv z z = o e aw Zz = 10 = 8 | a 2 2 -- < = 3 < a S 5 o5 ae a 3" Ves * 20V 3 ao 0 5 10 15 20 {p. GRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current 20 Pg, POWER DISSIPATION {WATTS) 0 20 0 3) 80 100 Tc, CASE TEMPERATURE (C) 120 140 Fig. 14 Power Vs. Temperature Derating Curve 92CS- 42660 Fig. 16 Unclamped Energy Waveforms IRFS10R, IRF511R, IRF512R, IRF513R 36 Vggt10 ! Fre] CURRENT REGULATOR lav BATTEAY O.2uf L 's CURRENT SHUNT 50 5 100 Te. CASE TEMPERATURE (9C) 125 150 Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK [, 92CS- 42659 ~ Fig. 15 Unclamped Energy Test Circuit ADJUST Ry TO OBTAIN SPECIFIED Ip Vv; PULSE GENERATOR ; rr 7 { WW 4 1 eo TO SCOPE o.012 i { son3 HIGH FRE QUENCY | a ee | 1 SHUNT Fig. 17 Switching Time Test Circuit Vos (ISOLATED SUPPLY) SAME TYPE AS OUT vO ~Yos + 10 = CURRENT SHUNT Fig. 18 Gate Charge Test Circuit 6-81