FAST DMOS FET Switches N-Channel Enhancement-Mode CORPORATION a $S7211 /SST213 /SST215 FEATURES @ High Speed Switching..........-......... ta(ony Ins @ Low Capacitance.................0005 2.4pF typical @ Low ON Resistance..............-00055 50Q typycal @ High Gain @ Surface Mount Package APPLICATIONS @ Ultra High Speed Analog Switching @ Sample and Hold @ Multiplexers @ High Gain Amplifiers DESCRIPTION Designed for audio, video and high frequency applications, the SST211 Series is a high speed, ultra low capacitance SPST analog switch. Utilizing Calogics proprietary DMOS processing the SST211 Series features an integrated zener diode designed to protect the gate from electrical over stress. ORDERING INFORMATION Part Package Temperature Range SST211 SOT-143 Surface Mount $S8T213 SOT-143 Surface Mount $S8T215 SOT-143 Surface Mount XSST211 Sorted Chips in Carriers XSST213 Sorted Chips in Carriers XSST215 Sorted Chips in Carriers -55C to +125C -55C to +125C -58C to +125C -55C to +125C -55C to +125C -55C to +125C PIN CONFIGURATION cD1-1 PRODUCT MARKING S8T211 211 SST213 213 SST215 215 SCHEMATIC DIAGRAM GATE (3) DRAIN (2) BODY (4) SOURCE (1) po 9-62 CORPORATION: calogic SST21T /SST213 /SST215 ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise noted) Parameter Breakdown Voltages ssT211 $ST213 SST215 Unit Vps +30 +10 +20 Vv Vsp +10 +10 +20 Vv VpB +30 +18 +25 v Vss +15 +15 +25 Vv Ves 15 -15 -25 Vv +25 +25 +30 Vv Ves -0.3 -0.3 -0.3 Vv +25 +25 +30 Vv Veo -30 -15 -25 Vv +25 +25 +30 Vv Ip Continous Drain Current .................0... 50mA T; Operating Junction Temperature Range . . -55 to +125C Pr Power Dissipation (at or below Tc = +25C) .... 360mW Ts Storage Temperature Range ........... -55 to +150C Linear Derating Factor3.6mW/ ELECTRICAL CHARACTERISTICS (T, = +25C unless otherwise noted) SST2t1 $ST213 $ST215 SYMBOL CHARACTERISTICS UNIT TEST CONDITIONS MIN | TYP |MAX| MIN |TYP/MAxX| MIN | TYP |MAX STATIC Drain-Source 30 | 35 Ip = 10H1A, Ves = Ves = 0 Bvps Breakdown Voltage ge 10 | 25 10 | 25 20 | 25 Ip = 10nA, Vas = Vas = -5V Bysp Source-Drain Breakdown Voltage] 10 10 20 Is= 10NA, Vap = Vap = -5V v Drain-Body Ip = 10nA, Vas = 0 Source Bvps Breakdown Voltage 15 1s 25 OPEN 1g Source-Body _ _ . BvsB Breakdown Voltage 15 15 25 ls = 10}A, Vas = 0 Drain OPEN Drain-Source 0.2) 10 0.2] 10 Vos = 10V lo(orr Ves = Ves = -5V om OFF Current 02] 10] |, [Vos=20v Source-Drain 0.6 | 10 0.6 | 10 Vsp = 10V _ _. IS(OFF) OFF Current 061 10 Vs 2 20V Veo = Vep = -5V Gate-Body 10 10 Vas = 25V _ _ Iebs Leakage Current 10 HA Ves = 30V Vp = Vee = 0 Veastth) Gate Threshold Voltage 0.5] 1.0] 2.0] 0.1 2.0 | 0.1 | 1.0 | 2.0 Vv Vos = Vas, Ip = 1nA, Vsp = 0 ta Drain-Source ' 50 | 70 50 | 70 50 | 70} ms Vas = 5V ip=1mA sen ON Resistance 30 | 45 30 | 45 30 | 45 Ves= tov | Vse=0 DYNAMIC Common-Source ' Vos = 10V, Ip = 20mA Os Foward Transcond. 10 | 12 10 | 12 10) 12 ms f = 1KHz, Vse = 0 Cigs +gd+qb) | Gate Node Capacitance 2.4 | 3.5 24135 24/135 j i Vos = 10V 1. ; . Crag + db) Drain Node Capacitance 1.31 1.5 1.3] 1.5 1.3] 1.5 pF | Vas = Ves = -15V Cigs + sb) Source Node Capacitance 3.5 | 4.0 3.5 | 4.0 3.5 | 4.0 = {MHz Crag) Reverse Transfer Capacitance 0.3 | 0.5 0.3 | 0.5 0.3 | 0.5 td(ONn) Turn ON Delay Time 0.7 | 1.0 0.7 | 1.0 0.7 | 1.0 V i T Von = 5V, Vaion) = 10 t Rise Time 0.8 | 1.0 0.8 | 1.0 0.8 | 1.0 ns Pi = 680, Re = 51 tOFF) Turn OFF Time 10 10 10 NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle Typical Performance Characteristics: See $D211-215 Series 9-63