D1616, 2SD1616A NEC / NPN SILICON TRANSISTORS 2S DESCRIPTION The 2S5D1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters FEATURES Low Collector Saturation Voltage. 22 MAX. Vce(sat) = 0.15 V TYP. (@ Ic = 1.0 A, Ig = 50 mA) @ High Break Down Voltage. . Vceo = 50 V/60 V (25D1616/2SD 1616A) < High Total Power Dissipation. : Py = 0.75 W (T, = 25 C) 2 Complementary to the NEC 25B1116/2SB1116A PNP Transis- tor. a5 = r = ABSOLUTE MAXIMUM RATINGS aoe hh = Maximum Temperatures u l Storage Temperature ..... 0... e eee eee 55 to +150 C 2.54 Junction Temperature .. 0.0.0.0... 000 eee eee 150 C Maximum 1.27 Maximum Power Dissipation (T, = 25 C) 4 Total Power Dissipation ........0 000: c cence eee ee eee 0.75 W i= < Maximum Voltages and Currents (T, = 25 C) 2SD 1616/2SD1616A 3 y Vego Collector to Base Voltage .........--220005 60 V/120 V ol Vceo Collector to Emitter Voltage. .........-05- 50 V/60 V 1. Emitter EC 11082, Vepo Emitter to Base Voltage ............0 0002 6.0V 3. Base IEC : PA33 le Collector Current (DC) ............20006 10A Ic Collector Current (pulse)* ..........2.005 2.0A *PW <10 ms, Duty Cycle < 50 % ELECTRICAL CHARACTERISTICS (Ta = 25 C) 28D1616/2SD1616A SYMBOL CHARACTERISTIC MIN. TYP, MAX. UNIT TEST CONDITIONS hee1** OC Current Gain 135 - 600 - VcE = 2.0 V, Ic = 100 mA hre2** OC Current Gain 81 - Voce =2.0V, IC =1.0A fr Gain Bandwidth Product 100 160 MHz VcE=2.0V, Ic =100mA Cob Output Capacitance 19 pF Vcg = 10 V, le = 0, f = 1.0 MHz IcBo Collector Cutoff Current . 100 nA Vogp=60V/120V,ig=0 - lEBO ' Emitter Cutoff Current 100 nA Vep=6.0 V, Ic =0 Vee** Base to Emitter Voltage 600 700 mV Vce = 2.0 V, Ic = 50 mA VcElsat)** Collector Saturation Voltage 0.15 0.3 Vv ic = 1.0 A, 1g =50mA VBE(sat)"" Base Saturation Voltage 0.9 1.2 Vv ic = 1.0 A, lg =50mA ton Turn-On Time 0.07 BS Veco = 10 V, Ic = 100 mA tstg Storage Time 0.95 us (s =Igog=10mA te Fall Time 0.07 aS VBE (off) = 2to3 V **Pulsed PW <350 us, Duty Cycle 52% Classification of hee, Rank L K u Range 135 to270 200 to 400 300 to 600 Test Conditions: VcE = 2.0 V, ic = 100mA 478 NEC 2$D1616,2SD1616A TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air PyTotal Power Dissipation W TaAmbient Temperature C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE iCollector CurrentA 0 1.0 VcE Collector to Emitter VoltageV GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT VcE=2.0 V f>-Gain Bandwidth Product -MHz I ICollector CurrentA hpe-DC Current Gain Cob Output CapacitancepF SAFE OPERATING AREAS (TRANSIENT THERMAL RESISTANCE METHOD) I Collector CurrentA 0.01 Vce~ Collector to Emitter VoltageV DC CURRENT GAIN vs. COLLECTOR CURRENT VoE=2.0 V 0.1 1 I~-Collector CurrentA OUTPUT CAPACITANCE vs. COLLECTORTO BASE VOLTAGE le=0 f=10 MHz Vcp-Coliector to Base VoltageV 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1 tCollector CurrentmA o | 4 Voge Collector to Emitter VoltageV COLLECTOR AND BASE SATURA- TION VOLTAGE vs, COLLECTOR EN Ic=20-lp oO oo u Voe(sat) Collector Saturation VoltageV go o VBE(sat) Base Saturation Voltagev ICoilector Current ~A SWITCHING TIME vs. COLLECTOR CURRENT Yoo= Ic = LO+Igy= ~ L0+Ig2 VBE (aft) = 2to3V PW42 us Cycle S2 % tsw Switching Timeys IqCollector Current~A 479