STW7NB80 N - CHANNEL 800V - 1.6 - 6.5A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW7NB80 V DSS R DS(on) ID 800 V < 1.9 6.5 A TYPICAL RDS(on) = 1.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Value Unit Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 k) Gate-source Voltage 800 V 30 V ID Drain Current (continuous) at T c = 25 o C 6.5 A ID o Drain Current (continuous) at T c = 100 C 4.1 A Drain Current (pulsed) 26 A Total Dissipation at T c = 25 o C 160 W Derating Factor 1.28 W/ o C 4 V/ns V GS I DM (*) P tot dv/dt ( 1 ) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (*) Pulse width limited by safe operating area September 1998 -65 to 150 o C 150 o C ( 1) ISD 6 , 200 A/s, VDD V(BR)DSS, Tj TJMAX 1/5 STW7NB80 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 0.78 30 0.1 300 C/W oC/W o C/W o C Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive 6.5 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) 260 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Typ. Max. 800 V GS = 0 I DSS Min. Unit V T c = 100 o C V GS = 30 V 1 50 A A 100 nA ON () Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 A R DS(on) Static Drain-source On Resistance V GS = 10V ID = 3 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 1.6 1.9 6.5 A DYNAMIC Symbol g fs () C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A V GS = 0 Min. Typ. 2.5 4.7 1250 145 16 Max. Unit S 1625 190 21 pF pF pF STW7NB80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 400 V R G = 4.7 Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V I D = 6 A V GS = 10 V R G = 4.7 V GS = 10 V Min. ID = 3 A VGS = 10 V Typ. Max. Unit 19 9 27 13 ns ns 33 11 14 47 nC nC nC Typ. Max. Unit 11 9 16 16 13 23 ns ns ns Typ. Max. Unit 6.5 26 A A SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 640 V ID = 6 A R G = 4.7 V GS = 10 V SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A di/dt = 100 A/s V DD = 100 V T j = 150 o C V GS = 0 1.6 V 700 ns 5.8 C 16.5 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STW7NB80 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/5 STW7NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5