STW7NB80
N - CHANNEL 800V - 1.6Ω - 6.5A - TO-247
PowerMESH MOSFET
PRELIMINARY DATA
■TYPICAL RDS(on) = 1.6 Ω
■EXTREMELY HIGH dv/ dt CAPABI LIT Y
■100% AVALANCHE TESTED
■VERY LOW INTRINSIC CAPACITANCES
■GATE CHARGE MINIMIZED
DESCRIP TION
Using the latest high voltage MESH O VERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLIC A TION S
■SWIT CH MO DE POWER SUPPL I ES (SMPS)
■DC-AC CONVERTERS FOR WELDING
EQUIPME NT AND UNINT ERR UPTIBLE
POWER SUPPLIES AND MOTOR DR IVE
■HIGH CURRE NT, HIGH SPEE D SWITCH ING
INTERNAL SCHEMATIC DIAGRAM
September 1998
123
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain- gate Voltage (RGS = 20 kΩ)800 V
VGS Gate-source Voltage ± 30 V
IDDrain Current (continuous) at Tc = 25 oC 6.5 A
IDDrain Current (continuous) at Tc = 100 oC 4.1 A
IDM(•) Drain Current (pulsed) 26 A
Ptot Total Dissipation at Tc = 25 oC 160 W
Derating Factor 1.28 W/oC
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulse width limited by safe operating area (1) ISD ≤ 6 Α, ≤ 200 A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX
TYPE VDSS RDS(on) ID
STW7NB80 800 V < 1.9 Ω6.5 A
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.78
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CH ARACTE RIST ICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or No t-Repetitive 6.5 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V) 260 mJ
ELECTRICAL CHARACTERI STICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 250 µA VGS = 0 800 V
IDSS Zero Gate Vo ltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating Tc = 100 oC1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 30 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage VDS = VGS ID = 250 µA345V
R
DS(on) Static Drain-source On
Resistance VGS = 10V ID = 3 A 1.6 1.9 Ω
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V 6.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs ( ∗) Forward
Transconductance VDS > ID(on) x RDS(on)max ID = 3 A 2.5 4.7 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 1250
145
16
1625
190
21
pF
pF
pF
STW7NB80
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ELECTRICAL CHARACTERI STICS (continued)
SWI TCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD = 400 V ID = 3 A
RG = 4.7 Ω VGS = 10 V 19
927
13 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V ID = 6 A VGS = 10 V
RG = 4.7 Ω V
GS =
10 V 33
11
14
47 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640 V ID = 6 A
RG = 4.7 Ω VGS = 10 V 11
9
16
16
13
23
ns
ns
ns
SOURCE DRA IN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
6.5
26 A
A
VSD ( ∗) Forward On Voltage ISD = 6 A VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC700
5.8
16.5
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STW7NB80
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
P025P
TO-247 MECHANICAL DATA
STW7NB80
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ar e not aut horized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STW7NB80
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