© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 1
1Publication Order Number:
NSA5.0A/D
NSA5.0AT3G
400 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional
The NSA5.0AT3G is designed to protect voltage sensitive
components from high voltage, high energy transients. It has
excellent clamping capability, high surge capability, low zener
impedance and a fast response time. The NSA5.0AT3G is ideally
suited for use in communication systems, automotive, numerical
controls, process controls, medical equipment, business machines,
power supplies and many other industrial/consumer applications.
Features
•Peak Power − 400 W @ 1 ms
•ESD Rating of Class 3 (> 16 kV) per Human Body Model
•ESD Rating IEC 61000−4−2 (> 30 kV)
•Response Time is Typically < 1 ns
•Flat Handling Surface for Accurate Placement
•Package Design for Top Slide or Bottom Circuit Board Mounting
•Low Profile Package
•Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by molded polarity notch or polarity
band
MOUNTING POSITION: Any
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
400 W PEAK POWER
Device Package Shipping†
ORDERING INFORMATION
NSA5.0AT3G
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
CATHODE ANODE
http://onsemi.com
SMA
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
QA
AYWWG
QA = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
NSA5.0AT3G
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 400 W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PD
RqJL
1.5
20
50
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
RqJA
0.5
4.0
250
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ TA = 25°C IFSM 40 A
Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1″ square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
IFForward Current
VFForward Voltage @ IF
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR
VF
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
VRWM
(Note 5)
IR @
VRWM
Breakdown Voltage
VC @ IPP
(Note 7) C Typ.
(Note 8)
VF @ IF
(Note 9)
VBR (Volts) (Note 6) @ ITVCIPP Max
Volts mAMin Nom Max mA Volts Amps pF V
NSA5.0AT3G QA 5.0 400 6.4 6.7 7.0 10 9.2 43.5 2450 3.5
5. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 3.
8. Bias voltage = 0 V, F = 1.0 MHz, TJ = 25°C.
9. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive, IF = 30 A.
NSA5.0AT3G
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3
RATING AND TYPICAL CHARACTERISTIC CURVES
TA = 25°C
PW (ID) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF Ipp.
≤ 10 ms
PEAK VALUE
Ippm
HALF VALUE - Ipp/2
10/1000 ms WAVEFORM
AS DEFINED BY R.E.A.
td
120
100
80
60
40
001 2 3 4
Ippm, PEAK PULSE CURRENT (%)
20
5
10-4
100
0.1 1 10
10
1
0.1
tP
, PULSE WIDTH (ms)
Ppk
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
TA = 25°C
, PEAK POWER (kW)
0.010.001
t, TIME (ms)
120
100
80
60
40
00 40 80 120 160
TA, AMBIENT TEMPERATURE (°C)
PEAK PULSE DERATING IN % OF
20
200
PEAK POWER OR CURRENT
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
10,000
1,000
100
1
1 10 100
BIAS VOLTAGE (VOLTS)
NSA5.0A
TJ = 25°C
F = 1 MHz
0
6
T, TEMPERATURE (°C)
50 100 150
PD, MAXIMUM POWER DISSIPATION (WATTS)
5
4
3
2
0
1
Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform
Figure 3. Pulse Derating Curve Figure 4. Typical Junction Capacitance vs.
Bias Voltage
Figure 5. Steady State Power Derating
C, CAPACITANCE (pF)
@ TL = 75°C
PD = 1.5 W
@ TA = 25°C
PD = 0.5 W
25 75 125
10
NSA5.0AT3G
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4
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE E
4.0
0.157
2.0
0.0787
2.0
0.0787
ǒmm
inchesǓ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.97 2.10 2.20 0.078
INCHES
A1 0.05 0.10 0.15 0.002
b1.27 1.45 1.63 0.050
c0.15 0.28 0.41 0.006
D2.29 2.60 2.92 0.090
E4.06 4.32 4.57 0.160
L0.76 1.14 1.52 0.030
0.083 0.087
0.004 0.006
0.057 0.064
0.011 0.016
0.103 0.115
0.170 0.180
0.045 0.060
NOM MAX
4.83 5.21 5.59 0.190 0.205 0.220
HE
E
bD
Lc
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
HE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
NSA5.0A/D
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