Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 1 of 5 November 2005
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information
The Communications Edge
TM
Product Features
x 1800 – 2200 MHz
x 26 dB Gain
x +30 dBm P1dB
x +46 dBm Output IP3
x +5V Single Positive Supply
x Internal Active Bias
x Lead-free/green/RoHS-compliant
SOIC-8 Package
Applications
x Mobile Infrastructure
Product Description
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is housed in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH212 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Functional Diagram
AH212-S8G
Function Pin No.
Vc1 1
Input 3
Output 6, 7
Vbias1 2
Vbias2 4
Vcc2 6, 7
GND Backside Paddle
N/C or GND 5, 8
Specifications (1)
Parameters Units
Min Typ
Max
Operational Bandwidth MHz 1800 2200
Test Frequency MHz 2140
Gain dB 25
Input Return Loss dB 25
Output Return Loss dB 9
Output P1dB dBm +29.5
Output IP3 (2) dBm +46
Noise Figure dB 6.0
W-CDMA Channel Power
@ -45 dBc ACLR dBm +21
Operating Current Range , Icc mA 400
Device Voltage, Vcc V 5
1. Test conditions unless otherwise noted: 25ºC, +5V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 qC
Storage Temperature -65 to +150 qC
RF Input Power (continuous) +26 dBm
Device Voltage +7 V
Device Current 900 mA
Device Power 6 W
Junction Temperature +250 ºC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameters Units Typical
Frequency MHz 1960 2140
Gain dB 25.8 25.0
Input Return Loss dB 15 25
Output Return Loss dB 11 9
Output P1dB dBm +30 +29.5
Output IP3 dBm +48.5 +46
IS-95A Channel Power
@ -45 dBc ACPR dBm +23.5
W-CDMA Channel Power
@ -45 dBc ACLR dBm +21
Noise Figure dB 5.5 6.0
Supply Bias +5 V @ 400 mA
Ordering Information
Part No. Description
AH212-S8G 1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Package)
AH212-S8PCB1960 1960 MHz Evaluation Board
AH212-S8PCB2140 2140 MHz Evaluation Board
1
2
3
4
8
7
6
5
8
7
6
5
N/C
Vcc2 / RF Out
N/C
Vcc2 / RF Out
Vc1
Vbias1
RF In
Vbias2
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 2 of 5 November 2005
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25
C, calibrated to device leads)
0.05 0.55 1.05 1.55 2.05 2.55 3
Frequency (GHz)
Gain
5
10
15
20
25
30
35
Gain (dB)
DB(|S(2,1)|)
AH212
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
3GHz
Swp Min
0.05GHz
S(1,1)
AH212
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
3GHz
Swp Min
0.05GHz
S(2,2)
AH212
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected
that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz
increment.
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25
C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -9.19 -130.35 17.61 65.80 -64.44 122.93 -2.71 -145.39
100 -4.58 -125.96 21.86 69.36 -58.42 -135.96 -2.92 -160.72
200 -0.92 -169.81 27.39 14.98 -55.39 49.47 -3.04 -166.12
400 -2.81 160.59 26.96 -55.64 -50.75 78.75 -1.13 -169.23
600 -4.10 134.99 26.35 -69.83 -49.90 59.30 -0.86 -179.36
800 -10.08 97.76 30.19 -108.08 -46.20 44.46 -0.93 172.84
1000 -14.20 -174.16 31.30 -167.40 -49.63 25.99 -1.05 164.98
1200 -7.51 146.36 29.49 141.86 -44.88 48.15 -1.97 159.52
1400 -6.58 101.88 27.14 99.61 -45.19 29.86 -2.76 156.95
1600 -6.67 65.24 25.02 63.05 -46.75 33.97 -2.82 154.08
1800 -7.87 37.31 23.35 28.87 -47.96 24.08 -2.53 150.05
2000 -11.42 19.84 22.01 -5.81 -44.88 70.88 -2.08 143.86
2200 -18.51 69.85 20.56 -44.21 -40.54 52.01 -1.45 134.91
2400 -8.70 105.38 18.40 -84.80 -38.49 31.21 -1.02 123.57
2600 -4.43 93.47 15.61 -122.39 -38.94 23.84 -0.89 113.66
2800 -2.78 84.89 12.91 -156.41 -39.25 -2.01 -1.16 106.71
3000 -2.44 81.11 10.51 167.98 -38.27 0.70 -1.34 101.38
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014” FR4, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitor –C7. The markers and vias are spaced in 0.050” increments.
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 3 of 5 November 2005
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information
The Communications Edge
TM
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25 qC
Frequency 1960 MHz
S21 – Gain 25.8 dB
S11 – Input Return Loss -15 dB
S22 – Output Return Loss -11 dB
Output P1dB +30 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing) +48.5 dBm
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd) +23.5 dBm
Noise Figure 5.5 dB
Device / Supply Voltage +5 V
Quiescent Current 400 mA
CAP
ID=C9
C=47 pF
CAP
ID=C10
C=1000 pF
CAP
ID=C7
C=2.7 pF
CAP
ID=C2
C=47 pF
CAP
ID=C11
C=4.7E6 pF
CAP
ID=C5
C=1 000 pF
IN D
ID =L2
L=18 nH
RES
ID=R1
R=10 Ohm
CAP
ID=C8
C=47 pF
CAP
ID=C1
C=47 pF
CAP
ID=C4
C=1000 pF
RES
ID=R3
R=75 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=125 mil
Eeff=4.6
Loss=0
F0=0 MHz
IND
ID=L1
L=18 nH
CAP
ID=C6
C=1000 pF
RES
ID=R2
R=0 Ohm
1
2
3
4
5
6
7
8
NET="AH212"
PORT
P=1
Z=5 0 Ohm
PORT
P=2
Z=50 Ohm
SIZE 1210
C7 is placed between silkscreen marker "2" and "3" on W J’s eval
All passive components are of size 0603
Vcc = +5 V
VBC = +5 V
unless otherwise noted. Board or @ 14 degre es at 1.96GHz away from pins 6 and 7.
Size 0805
S21 vs. Frequency
23
24
25
26
27
28
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
26
27
28
29
30
31
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
OIP3 vs. Frequency
+25° C, +15 dBm/tone
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 1960 MHz, 1961 MHz, +15 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25° C
35
40
45
50
55
12 13 14 15 16 17 18
Output Power (dBm)
OIP3 (dBm)
Noise Figure vs. Frequency
2
3
4
5
6
7
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-70
-65
-60
-55
-50
-45
-40
18 19 20 21 22 23 24 25
Output Channel Power (dBm)
ACPR (dBc)
-40 C +25 C +85 C
6
5
7
8
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 4 of 5 November 2005
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information
The Communications Edge
TM
2140 MHz Application Circuit (AH212-S8PCB2140)
Frequency 2140 MHz
S21 – Gain 25 dB
S11 – Input Return Loss -25 dB
S22 – Output Return Loss -9 dB
Output P1dB +29.5 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing) +46 dBm
Channel Power
(@-45 dBc ACLR, W-CDMA, Test model
1 +64 DPCH, ± 5MHz offset) +21 dBm
Noise Figure 6.0 dB
Device / Supply Voltage +5 V
Quiescent Current 400 mA
CAP
ID=C1
C=47 pF
C AP
ID =C2
C =47 pF
CAP
ID=C4
C=100 0 pF
CAP
ID= C5
C=1000 pF
C AP
ID= C 7
C =2.4 p F
CAP
ID=C6
C=100 0 p F
CAP
ID= C8
C=47 pF
CAP
ID= C9
C=47 pF
CAP
ID=C 10
C=1000 pF
CAP
ID=C11
C=4.7E6 p F
IN D
ID =L 1
L=18 nH IND
ID=L2
L=18 nH
RES
ID=R2
R=0 Ohm
RES
ID= R1
R=10 Ohm
RES
ID=R3
R=75 Ohm
TLINP
ID=TL 1
Z0=50 Ohm
L=110 mil
Eeff=4.6
Loss=0
F0=0 MH z
1
2
3
4
5
6
7
8
NE T=" AH 21 2"
PORT
P=1
Z=5 0 O h m
PORT
P=2
Z=50 Ohm
VBC = +5 V
unless otherwise noted. or @ 12.2 deg at 2.14GHZ away from pins 6 and 7.
SIZE 1 21 0
C7 is placed at silkscreen marker "2" on WJ’s eval board
All passive components are of size 0603
Vcc = +5 V
Size 0805
S21 vs. Frequency
22
23
24
25
26
27
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
25
26
27
28
29
30
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
OIP3 vs. Frequency
+25° C, +15 dBm/tone
35
40
45
50
55
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 2140 MHz, 2141 MHz, +25° C
35
40
45
50
55
12 13 14 15 16 17 18
Output Power (dBm)
OIP3 (dBm)
Noise Figure vs. Frequency
3
4
5
6
7
8
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-60
-55
-50
-45
-40
18 19 20 21 22
Output Channel Power (dBm)
ACLR (dBc)
-40 C +25 C +85 C
5
6
7
8
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com Page 5 of 5 November 2005
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Information
The Communications Edge
TM
AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260qC reflow temperature) and lead (maximum 245qC reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85q C
Thermal Resistance (1), Rth 33 q C / W
Junction Temperature (2), Tjc 156 q C
Notes:
1. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85
C. Tjc is a function of the voltage and the current applied.
It can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85
C
case temperature.
Product Marking
The component will be marked with an
“AH212G” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes
500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260
C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters
