Product Overview Reflowable Thermal Protection Solutions for Power Electronics Designs in Rugged Environments TE Reflowable Thermal Protection (RTP) device is a low resistance, robust surface mountable thermal protector. It has a set open temperature and can be installed using reliable, lead-free, Surface Mount Device (SMD) assembly and reflow processes. Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity The RTP device described in this overview can withstand the demanding environmental, life, and reliability requirements of automotive and industrial applications, including shock, vibration, temperature cycling, and humidity exposures. In the field, the RTP device opens if its internal junction exceeds the device's specified open temperature. Temperature increases can have multiple sources, one of which is component failure (i.e. when using power components such as a power FET, capacitor, resistor, triac, etc.). The RTP device open temperature is selected so that the device does not open within normal component operating windows, but it does open in a thermal runaway event and before the melt temperature of typical lead free solders. To simplify installation, improve reliability, and optimize thermal coupling with the PCB, the RTP device is surface mountable. No special SMD installation is required. Instead, after installation, the RTP device utilizes a one time electronic arming process to become thermally sensitive. Before the arming procedure, the device can go through installation KEY FEATURES temperatures up to 260C without going open. After arming, the device will open when the critical junction exceeds the open temperature. Arming can occur during test, or in * Opens at temperature below critical thermal threshold the field. * Compatible with up to 3 Pb-free solder reflow processes with peak temperatures up to 260C APPLICATIONS * Low series resistance * DC interrupt voltage capable * Robust design for harsh environment tested per stringent qualification specification * RoHS compliant, lead and halogen free * Helps provide protection against thermal runaway for power FETs and other components if failure occurs in applications such as automotive HVAC, ABS, power steering, DC/DC converters, PTC heaters, etc. or IT servers, telecom power, converters, etc. * Other DC thermal protection BENEFITS * Helps protect the system from thermal runaway damage due to failed power components * Allows use of standard surface-mount production methods with no special assembly costs * Low power dissipation and voltage drop * Supports DC electronic circuits * Suitable for rugged environment applications (automotive and industrial) * Green design circuitprotection.com/rtp-launch Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity TYPICAL APPLICATION BLOCK DIAGRAM Failed powerFET or other heat source PTH + RTP Load 1 ARM - Battery P1 Thermal Coupling PIN CONFIGURATION & DESCRIPTION PAD LAYOUT RECOMMENDATIONS Pin Description Pin Number Pin Name 1 P1 2 PTH 3 ARM Pin Function Power I/O pin (Main power current path) Thermally sensitive power I/O pin Intended to share protected component heat sink Electronic arming pin Configuration PinPin Configuration (Bottom View Device) (Bottom View of of Device) Pad Dimensions mm Pad Dimensions in in mm (Top View - Through Component) (Top View - Through Component) 9.34 9.34 7.707.70 4.144.14 ARM ARM 2.39 2.39 PTHPTH P1 P1 1.071.07 2.26 2.26 0.98 0.98 DEFINITION OF TERMS / DEVICE BLOCK DIAGRAM Junction The internal interface which must achieve the "Open Temperature" for the RTP device to open thermally after arming. This interface (thermal element) is located directly above the PTH pad. Open Temp The device will open when the junction temperature achieves this value. IARM and RARM Current and resistance levels measured between the ARM pin and either the P1 or PTH pin. These values are relevant only pre device arming. RPP and IPP Current and resistance levels measured between the P1 and PTH pins. circuitprotection.com/rtp-launch IARM ARM RARM P1 Thermal Protection Device Element IPP PTH Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity METHOD OF OPERATION - ELECTRONIC ARMING The RTP device is a unique thermal protector. It can be reflowed at temperatures up to 260C without opening, yet in operation it will open at temperatures well below 260C. To achieve this functionality, the RTP device uses an electronic arming mechanism. Electronic arming must be done after reflow, and can be done during final test. The device is armed by sending a specified arming current through the ARM pin of the device. Arming is a time- & current-dependent event. Arming times vs. current are provided in the "Arming Characteristics" section of this overview. Current can flow in either direction through the ARM pin. Prior to arming, RARM should have typical resistance as specified in the "Arming Characteristics" section. Once armed, the ARM pin will be electrically open relative to the P1 or PTH pins. Arming has been successful once RARM exceeds the post-arming minimum resistance specified in the "Arming Characteristics" section. RTP devices must be armed individually and cannot be armed simultaneously in series. Once "armed", the RTP device will permanently open when the device junction achieves its specified opening temperature. Although multiple options exist, below is one simple arming option. Sample Arming Options During Test Current Flow Description P1 RTP ARM pin connected between two test points PTH PowerFET ARM Test Point 1 PTH ARM = Arming Test Point 2 In this case, pin P1 is left "floating", and arming can occur during test, at a user defined time, by connecting to the Test Points and applying sufficient current (IARM) between Test Point 1 and Test Point 2 until the device is armed. ABSOLUTE MAX RATINGS Absolute Max Ratings RTP200R060SA RTP140R060SD Max Max 32 32 Max DC Open Voltage (1) VDC @ 16 VDC 200 200 @ 24 VDC 130 130 @ 32 VDC 100 100 25 25 KV Max Reflow Temperature (pre-arming) 260 260 C Operating temperature limits, post-arming, non-opening -55 +175 -40 +105 C Max DC Interrupt Current (1) ESD rating (Human Body Model) (1) Units Performance capability at these conditions can be influenced by board design. Performance should be verified in the user's system. circuitprotection.com/rtp-launch A Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity PERFORMANCE CHARACTERISTICS RTP200R060SA Resistance and Open Characteristics P1 to PTH RPP (Resistance from P1 to PTH) Operating Voltage Open Temperature, post-arming Thermal Resistance: Junction to Case Installation dependent Operating Current, post-arming (2)(3) Moisture Sensitivity Level Rating (4) RTP140R060SD Units Min Typ Max Min Typ Max @ 23+/-3C - 0.6 0.8 - 0.7 1.1 @ 105+/-3C - - - - 0.9 1.2 @ 175+/-3C - 0.8 1.2 - - - - - 32 - - 32 - VDC IPP = 0 196 205 213 135 140 145 C Case = PTH pad - 0.5 - - 0.5 - C/W @ 23+/-3C 32 - - 25 - - @ 100+/-3C 27 - - - - - @ 105+/-3C - - - 12 - - @ 175+/-3C 9 - - - - - - - 1 - - 1 - m A - ARMING CHARACTERISTICS RTP200R060SA Arming Characteristics ARM Min Arming Type RARM (Resistance from ARM to P1 or PTH) Arming Current (IARM) (2) Arming Time (@23 +/-3C) (2) Typ RTP140R060SD Max Min Electronically Armed Typ Max Electronically Armed Units - Pre-Arming - 300 - - 300 - m Post-Arming 10 - - 10 - - K @ 23 +/-3C 2 - 5 2 - 5 A @ 2A - 0.10 - - 0.10 - @ 5A - 0.01 - - 0.01 - Sec (2) Results were obtained on 44.5 x 57.2 x 1.6 (mm) single layer FR4 boards with 70m (2oz) Cu traces, and a 645mm2, 70m (2oz) Cu heat spreader connected to the PTH pad of the RTP device. (See RTP device test board drawing) Results will vary based on user's configuration and should be validated by the user in the end system. (3) Operating current is measured on the RTP test boards at the specified temperature. It is a highly installation dependent value. (4) As per JEDEC J-STD-020C. circuitprotection.com/rtp-launch Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity TYPICAL ELECTRICAL PERFORMANCE CHARACTERISTICS Typical Resistance (RPP) Vs Temperature (Passive Testing) Typical Resistance (RPP1.0 ) Vs Temperature Typical Resistance (R ) Vs Temperature RTP200R060SA PP (Passive Testing) (Passive Testing) RTP140R060SD 1.0 1.0 1.0 RPP (mOhms) RPP (mOhms) RPP (mOhms) RPP (mOhms) 1.0 0.5 0.5 RPP (mOhms) RTP200R060SA Typical Resistance ) Vs Temperature PP Typical Resistance (RPP) Vs (R Temperature RTP200R060SA RTP140R060SD (Passive(Passive Testing)Testing) RTP140R060SD 0.5 0.5 RTP200R060SA RTP200R060SA RTP140R060SD RTP140R060SD 0.0 -50 0 50 100 150 200 Temperature (C) 0.0 -50 0.0 -50 0 0 0.0 -50 0 0.0 -50 0.5 50 100 150 200 50 100 Temperature (C)150 Temperature (C) 50 100150 INSTALLATION 100 0 50 200 150200 200 DEPENDENT PERFORMANCE CHARACTERISTICS Typical Time-to-Open Vs F RTP200R0 Operating Current Vs Temperature Temperature for Temperature (C)44.5 x(C) Note: Results were obtained on 57.2 x 1.6 (mm) single FR4 boards with 70m (2oz) Cu traces, and a 645mm2, 70m (2oz) (Mounted aslayer described in above notice) (Mounted Typical Time-to-Open Vs Fault Current (I Open)as describe 100 -50 20 30 20 10 10 20 0 -50 0 50 10 100 101 0.1 1 100 Temperature (C) 0 10 -50 0 0 0 -50 0 0 -50 RTP200R060SA RTP200R060SA RTP140R060SD RTP140R060SD 50 50 100 100 150 200 150 200 Temperature (C) Temperature (C) 0 50 50 100 Time-to-Open (sec) as described in above notice) RTP140R060SD (Mounted(Mounted as described in above notice) Time-to-Open Time-to-Open (sec) (sec) 10 20 30 40 Typical Time-to-Open Fault (IPP Open) 10 Current Typical Time-to-Open Vs FaultVs Current (IPP Open) -55C for RTP200R060SA -55C for RTP200R060SA Device Device 100 RTP200R060SA Time-to-Open (sec) Time-to-Open (sec) 20 30 30 Operating Vs Temperature RTP200R060SA Operating Current Current Vs Temperature RTP140R060SD OperatingOperating Current (A) Current (A) Operating Current (A) Operating Current (A) 30 40 Operating Current (A) 40 40 PP 40 board drawing) Cu heat spreader connected the PTH pad of the RTP device. (See RTP device 100 Typicaltest Time-to-Open Vs Fault Current (I Open) Operating Current to Vs Temperature for RTP200R060SA Device PP RTP200R060SA Operating Current Vson Temperature Results will vary based user's user infor theRTP200R060SA end system. Device (Mounted as described in configuration above notice) and should be validated by the (Mounted as described in above notice) RTP140R060SD (Mounted as described in above notice) (Mounted as described in above notice) 100 0.01 0.1 as described in above notice) 23C (Mounted(Mounted as described in above notice) 23C 10 100 1 10 0.1 1 1 +175C -55C 23C 23C +175C +175C 0.1 0.01 150 0.01 0.1 0 200 0 50 Temperature (C) Temperature (C) 150200 0 50 50 100 050 50 100 100 150 200 150Fault Current 200 (A) 250 0 Typical Arming Time @ 23 +/-3C 100 150 150 200 200 250 Fault Current (A) Typical Fault Current (A) 4.0 4.0 2.0 3.0 3.0 4.0 4.0 ActivationActivation Current - ICurrent (A) - IARM (A) ARM circuitprotection.com/rtp-launch 5.0 5.0 5.0 5.0 0.01 50 Time-to-Open (sec) 0.01 50 5.0 0.1 0.01 50 70 +105C -40C 23C 23C +105C +105C 1 0.1 4.0 0.01 50 0.1 70 90 110 70 90 0.01 7050 90 110 110 130 130 150 150 170 Fault Current (A) Fault Current (A) 4x .100 170 190 190 210 210 .100 (1.00) 210 110 130 4x 150 170 .039 190 9070 11090 130 150 170 190 210 3X o.030.003 Fault Current (A) 4x .100 Fault Current (A) 3X o.030.003 AFTER PLATING 4x .100 4x .100 .039 (1.00) AFTER PLATING PLATED THRU HOLE 4x .100 .039 (1.00) PLATED THRU HOLE 4x .100 4x .100 4x .100 4x .100 .039 (1.00).039 (1.00) 1.750 130 Fault Curr 3X o.030.003 3X o.030.003 AFTER PLATING AFTER 1.750 PLATING PLATED THRU HOLE PLATED (44.5) THRU HOLE t Board 3.0 Activation Current - IARM (A) Activation Current - IARM (A) 23C +105C -40C CONNECTIVITY 225 Rev.2 JAN 2010 2.0 3.0 0.01 3.0 Activation Current - IARM0.1 (A) 2.0 2.0 2.0 as described in above notice) 23C (Mounted(Mounted as described in above notice) oard 0.01 1 0.1 10 1 TIVITY 2 JAN 2010 RTP200R060SA RTP200R060SA RTP140R060SD RTP140R060SD 10 1 Time-to-Open Time-to-Open (sec) (sec) 0.01 0.1 IVITY AN 2010 0.01 RTP140R060SD 0.1 300 (Mounted as described in above notice) RTP140R060SD 10 RTP200R060SA as described in above notice) RTP140R060SD (Mounted(Mounted as described in above notice) 0.1 250 300 Time-to-Open Vs F for RTP140R06 Typical Time-to-Open Fault Current (IPP Open) Typical Time-to-Open Vs FaultVs Current (IPP Open) -40C for RTP140R060SD 1 Device for RTP140R060SD Device -40C 10 Time-to-Open (sec) Time-to-Open (sec) 0.1 0.01 Arming Time (sec) Arming Time Arming (sec) Time (sec) Arming Time (sec) Arming Time (sec) 0.1 300 (Mounted Typical Time-to-Open Vs Fault Current (I Open)as describe PP 10 (I Typical Time-to-Open Fault Current Open) for Vs RTP140R060SD Device PP for RTP140R060SD Device RTP200R060SA (Mounted as described in above notice) Typical Arming @ 23RTP200R060SA +/-3C Typical Arming Time @ Time 23 +/-3C 1 250 300 0.01 0.01 200 (Mounted as described in above notice) 1 150 Fault Current (A) 100150 Typical Arming Time 1@ 23 +/-3C Typical(Mounted Arming Time @ 23 +/-3C as described in above notice) 1 100 Fault Curr (Mounted as described in above notice) 1 +175C -55C Time- TE Connectivity 4.0 0.1 0.01 50 5.0 Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments 70 90 110 130 150 170 190 210 Fault Current (A) Current - IARM (A) Test Board: 44.5 x 57.2 x 1.6 mm, 70m (2oz) Cu 4x .100 4x .100 FR4 RTP Test Board Cu 2.0 oz TE CONNECTIVITY T4225 Rev.2 JAN 2010 1.750 (44.5) 3X o.030.003 AFTER PLATING PLATED THRU HOLE .039 (1.00) P1 PTH ARM 4X o.065.003 NON PLATED HOLE .039 (1.00) 2.250 (57.2) PTH pad area = 661mm2, P1 pad area = 393mm2, ARM pad area = 169mm2 MECHANICAL DIMENSIONS Length RTP200R060SA Units Min Max Height 6.00 6.35 mm Length 11.60 12.00 mm Width 5.25 5.50 mm Height Width MATERIAL CONSTRUCTION RoHS Compliant ELV Compliant Pb-Free Halogen Free* Directive 2002/95/EC Compliant Directive 2000/53/EC Compliant Pb HF * Halogen Free refers to: Br900ppm, Cl900ppm, Br+Cl1500ppm. circuitprotection.com/rtp-launch Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity RECOMMENDED REFLOW PROFILE Classification Reflow Profiles Reflow Profile Profile Feature Pb-Free Assembly tp Tp Critical Zone TL to Tp Ramp up Average Ramp-Up Rate (TsMAX to Tp) 3C/second max. TL * Temperature Min (TsMIN) 150C * Temperature Max (TsMAX) 200C * Time (tsMIN to tsMAX) 60-180 seconds Time maintained above: * Temperature (TL) 217C * Time (tL) 60-150 seconds Peak/Classification Temperature (Tp) 260C Temperature Preheat tL TsMAX TsMIN ts Preheat 25 Ramp down t 25C to Peak Reflow Profile Time Time within 5C of actual Peak Temperature Time (tp) 20-40 seconds Ramp-Down Rate 6C/second max. Time 25C to Peak Temperature 8 minutes max. LAYOUT RECOMMENDATIONS Intimate thermal contact with the potential heat source is critical to achieve the desired protection performance. The RTP device should be used so that the PTH pin shares a copper mounting pad with the primary thermal pin or heat sink of the FET or protected component. Board layout recommendations for appropriate thermal coupling are provided below. 1. The RTP device PTH pad must be placed as close to the FET heat sink as practical. 2. Connect the PTH pad to the FET heat sink with as thick and wide a copper trace as practical. 3. Additional copper layers should NOT be placed directly underneath the PTH pad, and if possible, pull additional copper layers away from the RTP device PTH pad. These additional copper layers work to pull heat away from the RTP device and decrease its thermal sensitivity. 4. Pull top layer "cooling" traces as far away from RTP device PTH pad as practical. Example layout of an RTP device mounted near to a typical powerFET package on an FR4 type PCB RTP device pads FET pads Via to GND or TP ARM PTH P1 Note: Thermal conductivity between the RTP device and the heat source is highly dependent on board layout, heat sink structures, and relative placement and design of co-located components. It is the responsibility of the user to verify that the RTP device provides sufficient protection in the user's specific final device implementation. circuitprotection.com/rtp-launch Reflowable Thermal Protection for Power Electronics Designs in Rugged Environments TE Connectivity Load Resistance ALTERNATE & MULTI-FET SCHEMATIC IMPLEMENTATIONS P1 N-Channel PowerFET Load Resistance PTH RTP P1 S G D PTH D * Note: Load may limit "arming" current. G P1 D S ARM G D Load 1 PTH P1 S PTH ARM RTP PTH D S G ARM Load 1 Load 1 Battery * Low side N-Channel FET architectures allow only one FET to be installed per RTP device. S G ARM RTP P1 S N-Channel PowerFET ARM RTP PTH RTP Solution Considerations N-Channel PowerFET ARM Battery Battery Battery P1 Battery Battery Single FET D Schematic RTP G P1 RTP P1 Load 2 Load 2 S S G G D PTH ARM D D RTP P1 S * In the Multi-FET configuration, care must be taken to assure proper thermal response can be achieved with each FET. D G S Load 1 D * High Side FET designs allow multiple FETs to be installed with 1 RTP device while all sharing the same copper mounting pad (heat sink). PTH ARM RTP D G S Load 1 Load 1 Load 2 Battery S Battery Battery Multi FET High Side, N-Channel FET Protection Low Side, N-Channel Single FET Protection Load Resistance Note: The degree of thermal connectivity between the heat PTHsource and the RTP device is highly dependent on board layouts, PCB material, heat sink structures, and relative placement and design of co-located components. It is the responsibility of the user to verify that the RTP device ARM provides sufficient protection in the user's specific final device implementation. G G QUALIFICATION TESTING The Qualification testing plan for this series of RTP devices is built upon AEC automotive grade testing for ICs (AEC-Q100), discrete semiconductors (AEC-Q101), and passive components (AEC-Q200), with the intent to demonstrate survivability to the most stringent of the relevant requirements. Contact TE Circuit Protection for updated qualification status and detailed procedures. *A specific list of tests and conditions is available upon request. ENVIRONMENTAL SPECIFICATIONS RTP200R060SA RTP140R060SD Test Conditions Test Conditions Passive thermal aging 175C, 1000 hours Passive aging 105C, 1000 hours Active thermal aging 175C, 3A bias, 1000hr Humidity aging 85C, 85% RH, 1000 hours Passive humidity aging 85C, 85% RH, 1000 hours Storage humidity Per IPC/JEDEC J-STD020A level 1 (MSL1) Active humidity aging 85C, 85% RH, 5A bias, 1000hr Thermal shock 105C, -40C (300 times) Storage humidity Per IPC/JEDEC J-STD020A level 1 (MSL1) Thermal shock 125C, -55C (300 times) circuitprotection.com/rtp-launch FOR MORE INFORMATION circuitprotection.com/rtp-launch TE Circuit Protection 308 Constitution Drive Menlo Park, CA USA 94025-1164 Tel : (800) 227-7040, (650) 361-6900 Fax : (650) 361-4600 Email : RTP@TE.COM www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.te.com/japan/bu/circuitprotection/ (Japanese) Brazil Tel : 55-11-2103-6090 Fax : 55-11-2103-6216 Japan Tel : 81-44-844-8130 Fax : 81-44-844-8040 China, Beijing Tel : 86-10-6569-3488 x 16526 Fax : 86-10-6569-3206 Thailand / Malaysia / Vietnam Tel : 6-04-217-8112 Fax : 6-04-229-8177 UK / Eire / Benelux / Israel South Africa / Nordic / Baltic / Others Tel : 49-89-6089485 Fax : 49-89-6089394 Korea Tel : 82-2-3415-4654 Fax : 82-2-3486-1786 China, Shanghai Tel : 86-21-6106-7379 Fax : 86-21-6485-3255 Australia / Philippines Tel : 63-2-988-9465 Fax : 63-2-848-0205 Taiwan Tel : 886-2-8768-2788 x 211 Fax : 886-2-8768-1277 China, Shenzhen / Guangzhou Tel : 86-755-2515-4797 Fax : 86-755-2598-0419 India Tel : 91-80-4161-3745 Mobile : 91-99-0248-8886 China, Hong Kong Tel : 852-2738-8181 Fax : 852-2735-1185 Singapore / Indonesia Tel : 65-6590-5089 Fax : 65-6481-9377 Germany / Austria / Switzerland / Eastern Europe / Russia Tel : 49-89-6089584 Fax : 49-89-6089394 France / Italy / Iberia / Greece / Turkey Tel : 33-1-34208455 Fax : 33-1-34208479 Part numbers in this brochure are RoHS Compliant*, unless marked otherwise. *as defined www.te.com/leadfree te.com (c) 2013 Tyco Electronics Corporation, a TE Connectivity Ltd. Company. All Rights Reserved. RCP0095E 03/2013 TE Connectivity and TE connectivity (logo) are trademarks. Other logos, product and/or company names might be trademarks of their respective owners. All information, including illustrations, is believed to be accurate and reliable. Users, however, should independently evaluate the suitability of and test each product selected for their application. Tyco Electronics Corporation and/or its Affiliates in the TE Connectivity Ltd. family of companies ("TE") makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use. TE only obligations are those in the TE Standard Terms and Conditions of Sale and in no case will TE be liable for any incidental, indirect, or consequential damages arising from the sale, resale, use, or misuse of its products. Specifications are subject to change without notice. In addition, TE Connectivity reserves the right to make changes to materials or processing that do not affect compliance with any applicable specification without notification to Buyer. Without expressed or written consent by an officer of TE, TE does not authorize the use of any of its products as components in nuclear facility applications, aerospace, or in critical life support devices or systems. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TE Connectivity: RTP200R060SA-2 RTP200R060SA