MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE CM50MX-24A IC ..................................................................... 50A VCES ......................................................... 1200V CIB (3-phase Converter + 3-phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 55 29 56 28 57 27 58 26 59 25 60 24 61 23 2 3 4 5 6 7 8 TERMINAL t = 0.8 4.3 1.5 30 1 (3.81) 1.15 0.65 81.67 85.48 89.29 93.1 96.91 66.43 70.24 47.38 51.19 54 (7.4) 1.2 15.48 19.28 30.72 34.52 2.5 2.1 12.5 11.66 15.48 23.1 26.9 34.52 38.34 20.5 17 13 7 3.75 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 SECTION A 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Pin positions with tolerance A 91.2 95 75.96 79.76 60.72 64.52 45.48 49.28 0.8 30.24 34.04 (7.75) 15 18.8 0 (3) 3.5 0.5 0.8 LABEL Tolerance otherwise specified TH1(29) P(52~53) P1(54~55) GuP(49) GvP(44) GwP(39) Division of Dimension NTC 58.4 0 4-5.5 MOUNTING HOLES 39 50 0.5 57.5 62 4.2 28.33 32.14 0 4.06 13.09 16.9 121.7 118.1 110 0.5 99 94.5 to 3 0.2 TH2(28) EuP(48) R(1~2) S(5~6) T(9~10) U(13~14) B(24~25) GB(35) EvP(43) GuN(34) GvN(33) Tolerance 0.5 EwP(38) over 3 to 6 0.3 V(17~18) over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 W(21~22) GwN(32) N(57~58) N1(60~61) Es(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM 2FW. 20 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PWRW IE (Note.3) IERM(Note.3) (Tj = 25C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 97C Collector current Pulse Maximum collector dissipation TC = 25C Emitter current TC = 25C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 1200 20 50 100 355 50 100 Unit Rating 1200 20 30 60 260 1200 30 60 Unit Rating 1600 440 50 Unit V 9 V A W A BRAKE PART Symbol VCES VGES IC ICRM PWRW VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 106C Collector current Pulse Maximum collector dissipation TC = 25C Repetitive peak reverse voltage TC = 25C Forward current Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) V A W V A CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 1C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time 500 A 1040 A2S Rating -40 ~ +150 -40 ~ +125 2500 0 ~ +100 2.5 ~ 3.5 270 Unit MODULE Symbol Tj Tstg VisoO -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness 0RXQWLQJWorque Weight Conditions Terminals to base plate, f = 60Hz, AC for 1 min506 (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) C 9 m N*m g +convex -concave - Y + Heat sink side Note. 8: The base plate flatness measurement points are in the following figure. X - + Heat sink side 2FW. 20 2 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25C, unless otherwise specified) Parameter Conditions ICES VGE(th) IGES VCE = VCES, G-E Short Collector cutoff current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate-emitter leakage current VGE = VGES, C-E Short VCEsat Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Input capacitance Output capacitance Reverse transfer capacitance Gate charge Turn-on delay time 5ise time Turn-off delay time )all time Reverse recovery time Reverse recovery charge VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)D UJ RG (Note. 6) IC = 50A, VGE = 15V IC = 50A, VGE = 15V VCE = 10V G-E Short Tj = 25C Tj = 125C Chip (Note. 6) VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = 15V, RG = 6.2 Inductive load (IE = 50A) IE = 50A, G-E Short (Note. 6) IE = 50A, G-E Short Thermal resistance per 1/6 IGBT (Note. 1) (Junction to case) per 1/6 free wheeling diode Internal gate resistance TC = 25C, per switch External gate resistance Tj = 25C Tj = 125C Chip Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6 Limits Typ. -- 7 -- 2.0 2.2 1.9 -- -- -- 250 -- -- -- -- -- 2 2.6 2.16 2.5 -- -- 0 -- Max. 1 8 0.5 2.6 -- -- 8.5 0.75 0.17 -- 100 50 300 600 200 -- 3.4 -- -- 0.35 0.63 -- 62 Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 Limits Typ. -- 7 -- 2.0 2.2 1.9 -- -- -- 150 -- 2.6 2.16 2.5 -- -- 0 -- Max. 1 8 0.5 2.6 -- -- 5.1 0.45 0.1 -- 1 3.4 -- -- 0.48 0.79 -- 100 Min. -- -- Limits Typ. -- 1.2 Max. 6 1.6 -- -- 0.33 Unit mA V A V nF nC ns C V K/W BRAKE PART Symbol Parameter Conditions ICES VGE(th) IGES VCE = VCES, G-E Short Collector cutoff current Gate-emitter threshold voltage IC = 3mA, VCE = 10V GateHPLWWHU leakage current VGE = VGES, C-E Short VCEsat Collector-emitter saturation voltage (Note. 6) IC = 30A, VGE = 15V IC = 30A, VGE = 15V Cies Coes Cres QG IRRM(Note.3) Input capacitance Output capacitance Reverse transfer capacitance Gate charge Repetitive peak reverse current VF(Note.3) Forward voltage Rth(j-c)Q Rth(j-c)D UJ RG IF = 30A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25C Internal gate resistance External gate resistance VCE = 10V G-E Short Tj = 25C Tj = 125C Chip (Note. 6) VCC = 600V, IC = 30A, VGE = 15V VR = VRRM (Note. 6) IF = 30A Tj = 25C Tj = 125C Chip Unit mA V A V nF nC mA V K/W CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Repetitive peak reverse current VR = VRRM, Tj = 150C IF = 50A Forward voltage Thermal resistance per Diode (Note. 1) (Junction to case) Unit mA V K/W Jan. 2009 3 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R25 R/R B(25/50) P25 Parameter Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C Zero power resistance Deviation of resistance B constant Power dissipation (Note. 7) Min. 4.85 -7.3 -- -- Limits Typ. 5.00 -- 3375 -- Max. 5.15 +7.8 -- 10 Min. Limits Typ. Max. -- 0.015 -- Unit k % K mW MODULE Symbol Rth(c-s) Parameter Conditions Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) per 1 module (Note. 2) Unit K/W Note.1: Case temperature (TC), heat sink temperature (Ts) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCEsat and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K] Dimensions in mm (tolerance: 1mm) Chip Location (Top view) (121.7) 97.6 101.2 102.8 85.8 91.3 70.4 75.9 63.9 47.9 38.8 0 29.7 (110) 0 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Tr Br 55 CR C R C R RP S P T P 2 3 4 5 6 7 44.9 0 1 35.8 61 26.7 60 42.0 8 30 29 28 27 26 25 24 23 18.6 26.7 (Tr/UP, Tr/VP, Tr/WP) 27.4 (Di/Br) 27.9 (Th) 34.9 (Di/UP, Di/VP, Di/WP) 35.6 (Tr/UN, Tr/VN, Tr/WN) 43.3 9 10 11 12 13 14 15 16 17 18 19 20 21 22 99.4 59 93.5 58 78.1 83.1 86.5 57 Tr Tr Di Tr UP VP B r WP Th Di Tr Di Tr Di Tr UP UN VP VN WP WN Di Di Di WN UN VN 72.1 CR C R C R RN S N T N 56 62.7 (50) (62) 54 27.4 28.4 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Oct. 2011 4 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE P1 V VGE = 15V P1 U B G-E short IC GuP P1 GuP EuP EuP U G-E short VGE = 15V GuN IC GuN Es VGE = 15V V N1 Es V IC GB N1 Es N1 P side Inverter part Tr N side Inverter part Tr (example of U arm) (example of U arm) G-E short G-E short (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) B r Tr G-E short (GuP-EuP, GvP-EvP, GwP-EwP, GuN-Es, GvN-Es, GwN-Es) VCE(sat) test circuit P1 V P1 G-E short G-E short IE GuP P1 V GuP EuP IF EuP B U U G-E short G-E short GuN GuN Es Es IE G-E short V GB Es N1 N1 N1 N side Inverter part Di P side Inverter part Di (example of U arm) (example of U arm) G-E short G-E short (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) B r Di G-E short (GuP-EuP, GvP-EvP, GwP-EwP, GuN-Es, GvN-Es, GwN-Es) VEC/VF test circuit Arm VGE IE IE 90% 0V 0% trr Load -VGE + VCC IC 0A 90% +VGE 0V RG VGE -VGE t VCE Irr IC 10% 0A td(on) tr td(off) Switching time test circuit and waveforms 1/2 Irr Qrr = 1/2 Irr trr tf trr, Qrr test waveform Oct. 2011 5 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part VGE = 90 20V 13 80 70 12 60 50 40 11 30 20 10 10 9 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tj = 25C 15 0 1 2 3 4 5 6 7 8 9 10 VGE = 15V 3.5 3 2.5 2 1.5 1 Tj = 25C Tj = 125C 0.5 0 0 20 40 60 80 100 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 10 103 Tj = 25C 7 5 8 6 4 IC = 100A IC = 50A 2 IC = 20A 0 6 8 10 12 14 16 18 3 2 102 7 5 3 2 101 7 5 3 2 100 20 101 SWITCHING TIME (ns) Cies Coes 7 5 3 2 7 5 3 2 1 1.5 2 2.5 3 3.5 4 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 7 5 3 2 10-1 0.5 CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 103 100 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 Tj = 25C Tj = 125C GATE-EMITTER VOLTAGE VGE (V) 7 5 3 2 CAPACITANCE (nF) 4 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Inverter part Cres G-E short 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 tf td(off) 102 7 5 3 2 td(on) tr Conditions: 101 VCC = 600V 7 5 VGE = 15V 3 RG = 6.2 2 Tj = 125C Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Oct. 2011 6 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 5 3 2 7 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) 103 tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = 15V IC = 50A Tj = 125C Inductive load 101 7 5 3 2 100 0 10 2 3 5 7 101 2 3 3 2 7 5 3 2 2 3 5 7 101 5 7 102 REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 lrr (A), trr (ns) Eon 7 Eoff 5 trr 102 7 5 3 2 Irr Conditions: VCC = 600V VGE = 15V RG = 6.2 Tj = 25C Inductive load 101 7 5 3 2 3 2 Err 2 3 5 7 101 2 3 100 0 10 5 7 102 GATE RESISTANCE RG () 3 5 7 101 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) IC = 50A VCC = 400V 15 VCC = 600V 10 5 50 2 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 0 3 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 20 2 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Conditions: VCC = 600V 5 VGE = 15V 3 IC, IE = 50A Tj = 125C 2 Inductive load 100 0 10 GATE-EMITTER VOLTAGE VGE (V) Conditions: VCC = 600V VGE = 15V RG = 6.2 Tj = 125C Inductive load GATE RESISTANCE RG () 7 0 Eoff Err Eon 100 10-1 0 10 5 7 102 102 SWITCHING LOSS (mJ/pulse) 5 100 150 200 250 300 350 GATE CHARGE QG (nC) 7 Single pulse, 5 TC = 25C 3 2 10-1 7 5 3 2 10-2 Inverter IGBT part : Per unit base = Rth(j-c) = 0.35K/W Inverter FWDi part : Per unit base = Rth(j-c) = 0.63K/W Converter-Di part : Per unit base = Rth(j-c) = 0.33K/W Brake IGBT part : Per unit base = Rth(j-c) = 0.48K/W Brake Clamp-Di part : Per unit base = Rth(j-c) = 0.79K/W -3 10 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57 100 2 3 57 101 7 5 3 2 TIME (s) Oct. 2011 7 MITSUBISHI IGBT MODULES CM50MX-24A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) FORWARD CURRENT lF (A) 102 7 5 3 2 101 7 5 3 2 100 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 4 VGE = 15V 3.5 3 2.5 2 1.5 1 0 2.0 Tj = 25C Tj = 125C 0.5 0 10 20 30 40 50 60 COLLECTOR CURRENT IC (A) FORWARD VOLTAGE VF (V) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part FORWARD CURRENT IF (A) 102 7 5 3 2 101 7 5 3 2 100 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FORWARD VOLTAGE VF (V) Oct. 2011 8