BZW03D...
Vishay Semiconductors
Rev. 3, 12-Mar-01 1 (4)
www.vishay.com
Document Number 85603
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping sealed package
Applications
Voltage regulators and transient suppression circuits 94 9588
Order Instruction
Type Ordering Code Remarks
BZW03D6V8 BZW03D6V8–TAP Ammopack
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Power dissi
p
ation
l=10 mm, TL=25
°
C PV6.0 W
Power
dissipation
Tamb=45
°
C PV1.85 W
Repetitive peak reverse power dissipation PZRM 20 W
Non repetitive peak surge power dissipation tp=100
m
s, Tj=25
°
C PZSM 1000 W
Junction temperature Tj175
°
C
Storage temperature range Tstg –65...+175
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient
l=25 mm, TL=constant RthJA 30 K/W
Junction
ambient
on PC board with spacing 37.5 mm RthJA 70 K/W
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A VF1.2 V
BZW03D...
Vishay Semiconductors
Rev. 3, 12-Mar-012 (4)
www.vishay.com Document Number 85509
Type VZ ± 10% rzj and TKVZ at IZIR at VR
BZW03D... V
W W
%/K %/K mA
m
A V
Typ. Typ. Max. Min. Max. Max.
7V5 7.5 0.7 1.5 0 0.07 175 1500 5.3
8V2 8.2 0.8 1.5 0.03 0.08 150 1200 5.8
9V1 9.1 0.9 2.0 0.03 0.08 150 40 6.5
10 10.0 1.0 2.0 0.05 0.09 125 20 7.1
11 11.0 1.1 2.5 0.05 0.10 125 15 7.9
12 12.0 1.1 2.5 0.05 0.10 100 10 8.6
13 13.0 1.2 2.5 0.05 0.10 100 4 9.3
15 15.0 1.2 2.5 0.05 0.10 75 2 10.6
16 16.0 1.3 2.5 0.06 0.11 75 2 11.6
18 18.0 1.3 2.5 0.06 0.11 65 2 12.6
20 20.0 1.5 3.0 0.06 0.11 65 2 14.4
22 22.0 1.6 3.5 0.06 0.11 50 2 15.8
24 24.0 1.8 3.5 0.06 0.11 50 2 17.2
27 27.0 2.5 5.0 0.06 0.11 50 2 19.4
30 30 4 8 0.06 0.11 40 2 21.5
33 33 5 10 0.06 0.11 40 2 23.5
36 36 6 11 0.06 0.11 30 2 25.8
39 39 7 14 0.06 0.11 30 2 28
43 43 10 20 0.07 0.12 30 2 31
47 47 12 25 0.07 0.12 25 2 33.5
51 51 14 27 0.07 0.12 25 2 36.5
56 56 18 35 0.07 0.12 20 2 40
62 62 20 42 0.08 0.13 20 2 44.5
68 68 22 44 0.08 0.13 20 2 49
75 75 25 45 0.08 0.13 20 2 54
82 82 30 65 0.08 0.13 15 2 59
91 91 40 75 0.09 0.13 15 2 65
100 100 45 90 0.09 0.13 12 2 71
110 110 65 125 0.09 0.13 12 2 79
120 120 90 170 0.09 0.13 10 2 86
130 130 100 190 0.09 0.13 10 2 93
150 150 150 330 0.09 0.13 8 2 106
160 160 180 350 0.09 0.13 8 2 116
180 180 210 430 0.09 0.13 5 2 126
200 200 250 500 0.09 0.13 5 2 144
220 220 350 700 0.09 0.13 5 2 158
240 240 450 900 0.09 0.13 5 2 172
270 270 600 1200 0.09 0.13 5 2 194
2) Exp. falling pulse, tp = 500
m
s down to 37%
BZW03D...
Vishay Semiconductors
Rev. 3, 12-Mar-01 3 (4)
www.vishay.com
Document Number 85603
Characteristics (Tj = 25
_
C unless otherwise specified)
37.5
50 3
2
50
794 9087
Figure 1. Epoxy glass hard tissue, board thickness
1.5 mm, RthJA
x
70 K/W
0
0
2
4
6
8
95 9608
40 80 120 160
P – Total Power Dissipation ( W )
tot
Tamb – Ambient Temperature ( °C )
200
ll
TL=constant
l=10mm
see Fig.1
15mm
20mm
Figure 2. Total Power Dissipation vs.
Ambient Temperature
0 0.5 1.0 1.5
0
1
2
3
4
6
2.0
95 9609
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
5
Tj=25°C
Figure 3. Forward Current vs. Forward Voltage
0.01 0.1 1 10
10
100
1000
10000
P – Non-Repetitive Surge Power
ZSM
tp – Pulse Length ( ms )
100
95 9610
Dissipation ( W )
tp
Tj=25°C
Figure 4. Non Repetitive Surge Power Dissipation vs.
Pulse Length
Dimensions in mm
Cathode Identification ∅ 4.3 max.
∅ 1.35 max.
4.2 max.
Sintered Glass Case
SOD 64
Weight max. 1.0g technical drawings
according to DIN
specifications
94 9587
26 min. 26 min.
BZW03D...
Vishay Semiconductors
Rev. 3, 12-Mar-014 (4)
www.vishay.com Document Number 85509
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
