Order this document by 2N6515/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector - Emitter Voltage VCEO 250 300 350 Vdc Collector - Base Voltage VCBO 250 300 350 Vdc Emitter - Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 VEBO Rating Vdc 6.0 5.0 Base Current IB 250 mAdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Operating and Storage Junction Temperature Range Voltage and current are negative for PNP transistors 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 250 300 350 -- -- -- 250 300 350 -- -- -- 6.0 5.0 -- -- Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter - Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 Vdc 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max -- -- -- 50 50 50 -- -- 50 50 2N6515 2N6519 2N6517, 2N6520 35 30 20 -- -- -- (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 -- -- -- (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 300 270 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 45 40 20 220 200 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 25 20 15 -- -- -- -- -- -- -- 0.30 0.35 0.50 1.0 -- -- -- 0.75 0.85 0.90 Characteristic Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6519 2N6517, 2N6520 ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6519, 2N6520 nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE -- Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) -- 2.0 Vdc fT 40 200 MHz Ccb -- 6.0 pF -- -- 80 100 Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6519, 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton -- 200 s Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff -- 3.5 s 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN PNP 2N6515 2N6519 200 VCE = 10 V TJ = 125C 100 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 25C 70 - 55C 50 30 20 1.0 VCE = -10 V TJ = 125C 25C 100 70 - 55C 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 1. DC Current Gain 2N6517 2N6520 200 200 TJ = 125C VCE = -10 V 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 10 V 25C 70 50 - 55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 25C 70 - 55C 50 30 20 10 -1.0 50 70 100 TJ = 125C - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 2N6515, 2N6517 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 2N6519, 2N6520 100 70 50 TJ = 25C VCE = - 20 V f = 20 MHz 30 20 10 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 3. Current-Gain -- Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 NPN PNP 2N6515, 2N6517 2N6519, 2N6520 1.4 -1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 2.0 TJ = 25C VCE(sat) @ IC/IB = 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100 IC, COLLECTOR CURRENT (mA) 0 -1.0 Figure 4. "On" Voltages IC IB 2.0 1.5 + 10 25C to 125C 1.0 0.5 0 2N6519, 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) 2N6515, 2N6517 2.5 RVC for VCE(sat) - 55C to 25C - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 1.0 - 55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.5 IC IB 2.0 1.5 + 10 25C to 125C 1.0 0.5 RVB for VBE - 55C to 25C 0 - 0.5 - 1.0 - 1.5 RVC for VCE(sat) - 55C to 125C - 2.0 - 2.5 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 5. Temperature Coefficients 2N6515, 2N6517 2N6519, 2N6520 100 70 50 TJ = 25C Ceb 30 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 20 10 7.0 5.0 Ccb 20 10 7.0 5.0 3.0 2.0 2.0 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 TJ = 25C 30 3.0 1.0 0.2 Ceb 1.0 - 0.2 Ccb - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN PNP 2N6515, 2N6517 1.0 k 700 500 2N6519, 2N6520 1.0 k 700 500 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 300 200 t, TIME (ns) t, TIME (ns) 200 tr 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tr 100 70 50 20 10 1.0 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 10 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 7. Turn-On Time 2N6515, 2N6517 10 k 7.0 k 5.0 k 2N6519, 2N6520 2.0 k ts ts 1.0 k 700 3.0 k 500 t, TIME (ns) 2.0 k 1.0 k 700 500 tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 tf VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 100 70 50 300 200 30 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 8. Turn-Off Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Time Test Circuit 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 SINGLE PULSE 0.05 0.1 0.1 0.07 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 10. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25C 200 100 PP PP 100 ms 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.5 1.0 t1 2N6515 2N6519 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area 6 tP 1.0 ms TC = 25C 50 FIGURE A 10 s 100 s 1/f DUTY CYCLE 500 + t1 f + ttP1 PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data Motorola Small-Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD Motorola Small-Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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