1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MAXIMUM RATINGS
Rating Symbol 2N6515 2N6519 2N6517
2N6520 Unit
Collector–Emitter Voltage VCEO 250 300 350 Vdc
Collector–Base Voltage VCBO 250 300 350 Vdc
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO 6.0
5.0
Vdc
Base Current IB250 mAdc
Collector Current — Continuous IC500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD625
5.0 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0) 2N6515
2N6519
2N6517, 2N6520
V(BR)CEO 250
300
350
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 ) 2N6515
2N6519
2N6517, 2N6520
V(BR)CBO 250
300
350
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0) 2N6515, 2N6517
2N6519, 2N6520
V(BR)EBO 6.0
5.0 —
—
Vdc
1. Pulse Test: Pulse Width ≤ 300
m
s, Duty Cycle ≤ 2.0%.
Order this document
by 2N6515/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Voltage and current are negative
for PNP transistors
Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN PNP
REV 1
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Continued)
Collector Cutof f Current
(VCB = 150 Vdc, IE = 0) 2N6515
(VCB = 200 Vdc, IE = 0) 2N6519
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520
ICBO —
—
—
50
50
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520
IEBO —
—50
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
hFE 35
30
20
50
45
30
50
45
30
45
40
20
25
20
15
—
—
—
—
—
—
300
270
200
220
200
200
—
—
—
—
Collector–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) —
—
—
—
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat) —
—
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc) VBE(on) —2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb —6.0 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517
2N6519, 2N6520
Ceb —
—80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton —200 µs
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff —3.5 µs
1. Pulse Test: Pulse Width ≤ 300
m
s, Duty Cycle ≤ 2.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
hFE, DC CURRENT GAIN
200
100
20
30
50
70
VCE = 10 V TJ = 125
°
C
25
°
C
–55
°
C
2N6515
NPN
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
hFE, DC CURRENT GAIN
200
100
20
30
50
70
VCE = –10 V TJ = 125
°
C
25
°
C
–55
°
C
2N6519
PNP
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
200
100
10
20
50
70
VCE = 10 V TJ = 125
°
C
25
°
C
–55
°
C
2N6517
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
VCE = –10 V TJ = 125
°
C
25
°
C
–55
°
C
2N6520
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
2N6519, 2N6520
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10
100
20
30
50
70
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
TJ = 25
°
C
VCE = –20 V
f = 20 MHz
30
200
100
10
20
50
70
30
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
2N6515, 2N6517
NPN
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
2N6519, 2N6520
PNP
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
2N6519, 2N6520
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOL TS) 2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
2N6515, 2N6517
VR, REVERSE VOLTAGE (VOL TS)
2N6519, 2N6520
C, CAPACITANCE (pF)
1.0
V, VOLTAGE (VOLTS)
0.4
0.2
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0
–1.4
–1.2
0
–0.6
–0.8
–1.0
–0.4
–0.2
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
RV, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
RV, TEMPERATURE COEFFICIENTS (mV/ C)
°
θ
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
R
θ
VC for VCE(sat)
R
θ
VB for VBE
25
°
C to 125
°
C
–55
°
C to 25
°
C
–55
°
C to 125
°
C
IC
IB
+
10
R
θ
VC for VCE(sat)
R
θ
VB for VBE
25
°
C to 125
°
C
–55
°
C to 25
°
C
–55
°
C to 125
°
C
IC
IB
+
10
C, CAPACITANCE (pF)
7.0
10
20
30
50
–200–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
TJ = 25
°
C TJ = 25
°
C
Ccb
Ceb
Ccb
Ceb
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
100
2.0
3.0
5.0
70
1.0
7.0
10
20
30
50
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 7. Turn–On Time
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (ns)
1.0 k
20
10
2N6515, 2N6517
NPN
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
2N6519, 2N6520
PNP
Figure 8. Turn–Off Time
IC, COLLECTOR CURRENT (mA) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA) –100–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70
2N6519, 2N6520
30
50
70
100
200
300
500
700
t, TIME (ns)
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25
°
C
td @ VBE(off) = 2.0 V
tr
VCE(off) = –100 V
IC/IB = 5.0
TJ = 25
°
C
t, TIME (ns)
10 k
100
200
300
500
700
1.0 k
2.0 k
3.0 k
5.0 k
7.0 k
20
30
50
70
100
200
300
500
700
1.0 k
2.0 k
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25
°
C
VCE(off) = –100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25
°
C
ts
tf
ts
tf
1.0 k
20
10
30
50
70
100
200
300
500
700
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 9. Switching Time Test Circuit
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t), TRANSIENT THERMAL
RESIST ANCE (NORMALIZED)
10 k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k
t, TIME (ms)
Figure 10. Thermal Response
500
200
100
50
20
10
5.0
2.0
1.0
0.5
IC, COLLECTOR CURRENT (mA)
0.5 1.0 2.0 5.0 10 20 50 100 200 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTY CYCLE
+
t1f
+
t1
tP
PEAK PULSE POWER = PP
TA = 25
°
C
1.0 ms
10
µ
s
TC = 25
°
C
100
µ
s
100 ms
+10.8 V
–9.2 V
+VCC
2.2 k 20 k
50
50
Ω
SAMPLING SCOPE
1/2MSD7000
1.0 k
VCC ADJUSTED
FOR VCE(off) = 100 V
APPROXIMATELY
–1.35 V (ADJUST FOR V(BE)off = 2.0 V)
PULSE WIDTH
≈
100
µ
s
tr, tf
≤
5.0 ns
DUTY CYCLE
≤
1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
Z
θ
JC(t) = r(t)
•
R
θ
JC TJ(pk) – TC = P(pk) Z
θ
JC(t)
Z
θ
JA(t) = r(t)
•
R
θ
JA TJ(pk) – TA = P(pk) Z
θ
JA(t)
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25
°
C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
2N6515
2N6519
2N6517, 2N6520
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola
was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
2N6515/D
◊
