2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (Continued)
Collector Cutof f Current
(VCB = 150 Vdc, IE = 0) 2N6515
(VCB = 200 Vdc, IE = 0) 2N6519
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520
ICBO —
—
—
50
50
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520
IEBO —
—50
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
hFE 35
30
20
50
45
30
50
45
30
45
40
20
25
20
15
—
—
—
—
—
—
300
270
200
220
200
200
—
—
—
—
Collector–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) —
—
—
—
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat) —
—
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc) VBE(on) —2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb —6.0 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517
2N6519, 2N6520
Ceb —
—80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton —200 µs
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff —3.5 µs
1. Pulse Test: Pulse Width ≤ 300
m
s, Duty Cycle ≤ 2.0%.