A Business Partner of Renesas Electronics Corporation. PS2861B-1 Data Sheet R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110C DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP (Small Outline Package) for high density applications. Due to the high isolation voltage between the input and output, the PS2861B-1 is suitable for interface and signal transfer circuits that require surface or high-density mounting. FEATURES * * * * * * * * Operating ambient temperature: 110C Isolation distance (0.4 mm MIN.) High isolation voltage (BV = 3 750 Vr.m.s.) Shrink SOP (Small Outline Package) type High-speed switching (tr = 4s TYP., tf = 5s TYP.) Embossed tape product: PS2861B-1-F3: 3 500 pcs/reel Pb-Free product Safety standards * UL approved: No. E72422 * CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) * BSI approved (BS EN 60065, BS EN 60950) * SEMKO, NEMKO, DEMKO, FIMKO approved (EN 60065, EN60950) * CQC approved (GB8898, GB4943) * DIN EN 60747-5-5 (VDE 0884-5) approved (Option) PIN CONNECTION (Top View) 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 APPLICATIONS * Power supply * Programmable logic controllers The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 1 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 PACKAGE DIMENSIONS (UNIT: mm) 2.70.3 4 3 1 2 7.00.3 0.15+0.10 -0.05 2.00.1 0.10.1 4.4 0.50.3 1.27 0.40.1 0.12 M PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 5.0 mm Creepage Distance Isolation Distance 5.0 mm 0.4 mm R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 2 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 MARKING EXAMPLE Company initial Made in Taiwan Last 2 numbers of type No. : 1B Assembly Lot 301 Week Assembled Year Assembled (Last 1 digit) Made in Taiwan Halogen free " " (Vertical bar) :Made in Taiwan & Halogen free " " (Square) :Made in Japan " " (Horizontal bar) :Made in Japan & Halogen free Made in Japan Made in Japan Halogen free R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 3 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 ORDERING INFORMATION Part Number Order Number PS2861B-1-F3 PS2861B-1Y-F3-A PS2861B-1-V-F3 PS2861B-1Y-V-F3-A Note: Solder Plating Specification Pb-Free and Halogen Free Packing Style Safety Standard Approval Embossed Tape 3 500 pcs/reel Standard products (UL, CSA, BSI, SEMKO, NEMKO, DEMKO, FIMKO, CQC approved) Embossed Tape 3 500 pcs/reel DIN EN 60747-5-5 (VDE 0884-5) approved (Option) Application Part Number*1 PS2861B-1 *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Diode Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V PD/C 0.6 mW/C Power Dissipation Derating Power Dissipation PD 60 mW Peak Forward Current *1 IFP1 2.5 A Peak Forward Current *2 IFP2 1.0 Collector to Emitter Voltage VCEO 70 V Emitter to Collector Voltage VECO 5 V IC 50 mA PC/C 1.2 mW/C PC 120 mW BV 3 750 Vr.m.s. Operating Ambient Temperature TA -55 to +110 C Storage Temperature Tstg -55 to +150 C Transistor Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *3 Notes: *1. PW = 10 s, Duty Cycle = 1% *2. PW = 100 s, Duty Cycle = 1% *3. AC voltage for 1 minute at TA = 25C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 4 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Forward Voltage Reverse Current Diode Symbol VF IR Terminal Capacitance TYP. 1.1 Collector to Emitter Dark Current ICEO IF = 0 mA, VCE = 24 V Coupled Current Transfer *1 Ratio (IC/IF) CTR IF = 5 mA, VCE = 5 V 50 150 IF = 1 mA, VCE = 5 V 10 50 Collector Saturation Voltage VCE (sat) Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz Rise Time*2 tr 1011 100 nA 300 % 0.3 V 0.4 pF 4 s VCC = 5 V, IC = 2 mA, RL = 100 tf 5 ton 5 *2 toff 5 Turn-off Time Unit V A pF IF = 10 mA, IC = 2 mA *2 Turn-on Time MAX. 1.4 5 15 Transistor Fall Time MIN. V = 0 V, f = 1 MHz Ct *2 Conditions IF = 5 mA VR = 5 V Notes: *1. CTR rank CTR rank CTR (%) L M N Conditions 100 to 300 IF = 5 mA, VCE = 5 V 20 and larger IF = 1 mA, VCE = 5 V 50 to 150 IF = 5 mA, VCE = 5 V 10 and larger IF = 1 mA, VCE = 5 V 50 to 300 IF = 5 mA, VCE = 5 V 10 and larger IF = 1 mA, VCE = 5 V *2. Test Circuit for Switching Time Pulse Input VCC Input PW = 100 s Duty cycle = 1/10 ton td IF In monitor toff ts VOUT 50 RL = 100 90% Output 10% tr R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 tf Page 5 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 0.6 mW/C 80 60 40 20 0 25 50 75 100110 125 160 140 120 100 80 60 40 20 25 50 100110 125 75 Ambient Temperature TA (C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 TA = +100C +60C +25C 10 5 0C -25C -55C 1 0.5 25 20 IF = 10 mA 15 10 5 mA 3 mA 5 2 mA 1 mA 0.1 0.05 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 Forward Voltage VF (V) 1 2 3 4 5 6 7 8 9 10 Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 10 000 COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100.0 VCE = 24 V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 150 Ambient Temperature TA (C) Collector Current IC (mA) Forward Current IF (mA) 1.2 mW/C 180 0 150 100 50 200 100 10 1 0.1 0 20 40 60 80 100 120 Ambient Temperature TA (C) 10.0 IF = 10 mA 5 mA 3 mA 2 mA 1.0 0.1 0 1 mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector Saturation Voltage VCE (sat) (V) Remark The graphs indicate nominal characteristics. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 6 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 CTR = 160%@TA = 25C 1.4 1.2 1.0 0.6 0.4 Normalized to 1.0 0.2 at TA = 25C, IF = 1 mA, VCE = 5 V 0 -60 -40 -20 0 20 40 60 80 100 120 100%@TA = 25C 1.2 1.0 0.8 CTR = 160%@TA = 25C 0.6 0.4 Normalized to 1.0 0.2 at TA = 25C, IF = 5 mA, VCE = 5 V 0 -60 -40 -20 0 20 40 60 80 100 120 SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 1 000 IC = 2 mA, VCC = 5 V, CTR = 100% IF = 5 mA, VCC = 5 V, CTR = 100% 10 td ts 1 0.1 10 250 1.4 Ambient Temperature TA (C) tf tr 300 1.6 Ambient Temperature TA (C) Switching Time t ( s) Switching Time t ( s) 100%@TA = 25C 0.8 100 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR 1.6 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 100 1 000 tf 100 ts 10 tr td 1 0.1 0.1 10 000 1 10 100 Load Resistance RL () Load Resistance RL (k) CURRENT TRANSFER RATIO vs. FORWARD CURRENT FREQUENCY RESPONSE 5 VCE = 5 V, n=3 0 Normalized Gain GV Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 200 150 Sample A B C 100 100 -10 300 -15 RL = 1 k -20 50 0 0.1 -5 IF = 5 mA, VCE = 5 V 1 10 100 Forward Current IF (mA) -25 0.1 1 10 100 1 000 Frequency f (kHz) Remark The graphs indicate nominal characteristics. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 7 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 TAPING SPECIFICATIONS (UNIT: mm) 2.00.1 1.5+0.1 -0 16.00.3 7.50.1 4.00.1 7.550.1 1.750.1 Outline and Dimensions (Tape) 2.8 MAX. 0.3 1.550.1 2.30.1 2.850.1 4.00.1 Tape Direction PS2861B-1-F3 R1B 301 R1B 301 R1B 301 R1B 301 R1B 301 Outline and Dimensions (Reel) R 1.0 21.00.8 1001.0 2.00.5 13.00.2 3302.0 2.00.5 17.51.0 21.51.0 Packing: 3 500 pcs/reel R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 15.9 to 19.4 Outer edge of flange Page 8 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) 1.27 0.8 1.45 6.25 Remark All dimensions in this figure must be evaluated before use. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 9 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature * Time of peak reflow temperature * Time of temperature higher than 220C * Time to preheat temperature from 120 to 180C * Number of reflows * Flux 260C or below (package surface temperature) 10 seconds or less 60 seconds or less 12030 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature * Time * Preheating conditions * Number of times * Flux 260C or below (molten solder temperature) 10 seconds or less 120C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron * Peak Temperature (lead part temperature) 350C or below * Time (each pin) 3 seconds or less * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 10 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collectoremitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 11 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.6 x UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices) Upr = 1.875 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) Material group (DIN EN 60664-1 VDE0110 Part 1) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25C VIO = 500 V dc at TA MAX. at least 100C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = Tsi R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Spec. Unit 55/110/21 UIORM Upr 710 1 136 Vpeak Vpeak Upr 1 331 Vpeak UTR 6 000 2 Vpeak CTI 175 Tstg TA III a -55 to +150 -55 to +110 C Ris MIN. Ris MIN. 1012 11 10 Tsi Isi Psi 175 400 700 C mA mW Ris MIN. 109 C Page 12 of 13 A Business Partner of Renesas Electronics Corporation. PS2861B-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. * Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. * Do not burn, destroy, cut, crush, or chemically dissolve the product. * Do not lick the product or in any way allow it to enter the mouth. R08DS0100EJ0300 Rev.3.00 Jan 23, 2013 Page 13 of 13 Revision History Rev. 1.00 3.00 Date Jan 28, 2009 Jan 23, 2013 PS2861B-1 Data Sheet Description Summary Page - Throughout p.1 p.3 p.4 p.5 p.8 p.10 p.12 This data sheet was released as PN10742EJ01V0DS Renesas format is applied to this data sheet. The safety standards are revised. The explanation in MARKING EXAMPLE is revised. ORDERING INFORMATION is modified with the revision of the safety standards. Turn-on Time (ton) and Turn-off Time(toff) are added to the table in ELECTRICAL CHARACTERISTICS. The image in Tape Direction is revise. The note about temperature condition of the recommended soldering conditions is deleted. The value of Upr is changed from the value, 1 065 and the factor, 1.5 of UIORM is changed from 1 136 and 1.6, respectively. All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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