2N3583, 2N3584, 2N3585
Silicon NPN Transistors
High Voltage, Medium Power Switch
TO66 Type Package
Description:
The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high−
speed switching and linear amplifier applications for high−voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
DTO66 Type Package
DContinuous Collector Current: IC = 2A
DPower Dissipation: PD = 35W @ TC = +25C
DCollector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
2N3583 175V....................................................................
2N3584 250V....................................................................
2N3585 300V....................................................................
Collector−Base Voltage, VCB
2N3583 250V....................................................................
2N3584 375V....................................................................
2N3585 500V....................................................................
Emitter−Base Voltage, VEB 6V...........................................................
Collector Current, IC
Continuous
2N3583 1A...................................................................
2N3584, 2N3585 2A...........................................................
Peak 5A........................................................................
Base Current, IB 1A....................................................................
Total Power Dissipation (TC = +25C), PD 35W............................................
Derate above 25C 0.2W/C.......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Junction Temperature Range, Tstg −65 to +200C..................................
Thermal Resistance, Junction to Case, RJC 5C/W.........................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
2N3583 VCEO(sus) IC = 200mA, IB = 0, Note 1 175 − − V
2N3584 250 − − V
2N3585 300 − − V
Collector Cutoff Current
2N3583
ICEO VCE = 150V, IB = 0 − − 10 mA
2N3584, 2N3585 − − 5 mA
Collector Cutoff Current
2N3583 ICEX VCE = 225V, VBE(off) = 1.5V − − 1 mA
VCE = 225V, VBE(off) = 1.5V, TC = +150C− − 3 mA
2N3584 VCE = 340V, VBE(off) = 1.5V − − 1 mA
VCE = 300V, VBE(off) = 1.5V, TC = +100C− − 3 mA
2N3585 VCE = 450V, VBE(off) = 1.5V − − 1 mA
VCE = 300V, VBE(off) = 1.5V, TC = +100C− − 3 mA
Emitter Cutoff Current
2N3583 IEBO VEB = 6V, IC = 0 − − 5 mA
2N3584, 2N3585 − − 0.5 mA
ON Characteristics (Note 1)
DC Current Gain
All Devices hFE IC = 100mA, VCE = 10V 40 − −
2N3583 IC = 500mA, VCE = 10V 40 −200
IC = 1A, VCE = 10V 10 − −
2N3584, 2N3585 IC = 1A, VCE = 2V 8−80
IC = 1A, VCE = 10V 25 −100
Collector−Emitter Saturation Voltage
2N3583 VCE(sat) IC = 1A, IB = 125mA − − 5.0 V
2N3584, 2N3585 − − 0.75 V
Base−Emitter Saturation Voltage
2N3584 & 2N3585 Only VBE(sat) IC = 1A, IB = 100mA − − 1.4
V
Base−Emitter ON Voltage VBE(on) IC = 1A, VCE = 10V − − 1.4 V
Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.200
(5.08)
EmitterCollector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
