STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier * High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. * High Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * RoHS compliant Applications * General Purpose * Switching Mode Power Supply * Boost Diode in continuous mode power factor corrections * Power switching circuits Pin Assigments TO-220-2L 1. Cathode 1. Cathode 2. Anode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage VRWM VR IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Parameter Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 30 A @ TC = 103oC 300 Operating and Storage Temperature Range A o -65 to +150 C Thermal Characteristics Symbol RJC Parameter Ratings Maximum Thermal Resistance, Junction to Case Units o 1.1 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F30S60S FFP30S60STU TO-220-2L - - 50 (c)2012 Fairchild Semiconductor Corporation FFP30S60S Rev.C0 1 www.fairchildsemi.com FFP30S60S February 2012 TM Symbol Min. Typ. Max. Units VFM1 IF = 30A IF = 30A Parameter TC = 25oC TC = 125oC - 2.1 1.6 2.6 - V IRM1 VR = 600V VR = 600V TC = 25oC TC = 125oC - - 100 500 A trr IF = 1A, di/dt = 100A/s, VR = 30V TC = 25oC - 25 35 ns 25oC - 28 2.4 0.9 34 40 - ns A - 75 6.3 0.9 236 - nC 20 - - mJ trr Irr S factor Qrr IF = 30A, di/dt = 200A/s, VR = 390V trr Irr S factor Qrr IF = 30A, di/dt = 200A/s, VR = 390V WAVL Avalanche Energy ( L = 40mH) TC = TC = 125oC nC ns A Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2% Test Circuit and Waveforms FFP30S60S Rev.C0 2 www.fairchildsemi.com FFP30S60S Electrical Characteristics TC = 25oC unless otherwise noted FFP30S60S Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop vs. Forward Current Figure 2. Typical Reverse Current vs. Reverse Voltage 1000 200 o o TC = 125 C o 75 C o 25 C 10 0 1 o TC = 25 C 0.1 1 2 3 4 Forward Voltage, VF [V] 10 5 Figure 3. Typical Junction Capacitance Reverse Recovery Time, trr [ns] 280 210 140 70 1 10 Reverse Voltage, VR [V] 600 o o TC = 75 C 60 o TC = 25 C 40 20 100 150 200 di/dt [A/s] 250 300 Figure 6. Forward Current Derating Curve 70 8 Average Forward Current, IF(AV) [A] 10 o TC = 125 C 6 o TC = 75 C 4 o TC = 25 C 2 FFP30S60S Rev.C0 500 TC = 125 C 80 100 Figure 5. Typical Reverse Recovery Current vs. di/dt 0 100 200 300 400 Reverse Voltage, VR [V] 100 Typical Capacitance at 0V = 271 pF 0 0.1 100 Figure 4. Typical Reverse Recovery Time vs. di/dt 350 Capacitances , Cj [pF] o TC = 75 C 10 0.01 1 Reverse Recovery Current, Irr [A] TC = 125 C 100 Reverse Current , IR [A] Forward Current, IF [A] 100 150 200 di/dt [A/s] 250 60 50 40 30 20 10 0 25 300 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFP30S60S Typical Performance Characteristics Figure 7. Normalized Maximum Transient Thermal Impedance ZJA, NORMALIZED THERMAL IMPEDANCE 1.0 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE 0.01 10-5 FFP30S60S Rev.C0 10-4 PEAK TJ = PDM x ZJA x RJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 4 100 101 www.fairchildsemi.com FFP30S60S Mechanical Dimensions TO-220-2L Dimensions in Millimeters FFP30S60S Rev.C0 5 www.fairchildsemi.com FFP30S60S TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2CoolTM F-PFSTM PowerTrench(R) The Power Franchise(R) (R) PowerXSTM AccuPowerTM FRFET(R) Global Power ResourceSM Programmable Active DroopTM AX-CAPTM* (R) (R) QFET BitSiC Green BridgeTM TinyBoostTM Build it NowTM QSTM Green FPSTM TinyBuckTM CorePLUSTM Quiet SeriesTM Green FPSTM e-SeriesTM TinyCalcTM CorePOWERTM RapidConfigureTM GmaxTM TinyLogic(R) CROSSVOLTTM GTOTM TM TINYOPTOTM CTLTM IntelliMAXTM TinyPowerTM Current Transfer LogicTM ISOPLANARTM Saving our world, 1mW/W/kW at a timeTM TinyPWMTM DEUXPEED(R) Marking Small Speakers Sound Louder SignalWiseTM TinyWireTM Dual CoolTM and BetterTM SmartMaxTM TranSiC(R) EcoSPARK(R) MegaBuckTM SMART STARTTM TriFault DetectTM EfficentMaxTM MICROCOUPLERTM Solutions for Your SuccessTM TRUECURRENT(R)* ESBCTM MicroFETTM SPM(R) SerDesTM STEALTHTM MicroPakTM (R) SuperFET(R) MicroPak2TM SuperSOTTM-3 MillerDriveTM Fairchild(R) UHC(R) SuperSOTTM-6 MotionMaxTM Fairchild Semiconductor(R) Ultra FRFETTM SuperSOTTM-8 Motion-SPMTM FACT Quiet SeriesTM UniFETTM SupreMOS(R) mWSaverTM FACT(R) VCXTM (R) SyncFETTM OptoHiTTM FAST (R) VisualMaxTM Sync-LockTM OPTOLOGIC FastvCoreTM (R) VoltagePlusTM OPTOPLANAR (R)* FETBenchTM XSTM FlashWriter(R) * (R) FPSTM tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FFP30S60S Rev.C0 6 www.fairchildsemi.com