©2012 Fairchild Semiconductor Corporation
FFP30S60S Rev.C0
tm
FFP30S60S
www.fairchildsemi.com1
STEALTH II Rectifier
TM
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 103oC 30 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 300 A
TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC
Symbol Parameter Ratings Units
RθJC Maximum Thermal Resistance, Junction to Case 1.1 oC/W
Device Marking Device Package Reel Size Tape Width Quantity
F30S60S FFP30S60STU TO-220-2L - - 50
1. Cathode 2. Anode
1. Cathode 2. Anode
TO-220-2L
Pin Assigments
FFP30S60S
Features
• High Speed Switching, trr < 40ns @ IF = 30A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
30A, 600V STEALTHTM II Rectifier
The FFP30S60S is STEALTHTM II rectifier with soft recovery
charac-teristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling o f boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
February 2012
FFP30S60S Rev.C0
FFP30S60S
www.fairchildsemi.com2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
VFM1IF = 30A
IF = 30A TC = 25oC
TC = 125oC-
-2.1
1.6 2.6
-V
IRM1VR = 600V
VR = 600V TC = 25oC
TC = 125oC-
--
-100
500 µA
trr IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 25 35 ns
trr
Irr
S factor
Qrr
IF = 30A, di/dt = 200A/µs, VR = 390V TC = 25oC
-
-
-
-
28
2.4
0.9
34
40
-
-
-
ns
A
nC
trr
Irr
S factor
Qrr
IF = 30A, di/dt = 200A/µs, VR = 390V TC = 125oC
-
-
-
-
75
6.3
0.9
236
-
-
-
-
ns
A
nC
WAVL Avalanche Energy ( L = 40mH) 20 - - mJ
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
FFP30S60S Rev.C0
FFP30S60S
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current
vs. Forward Current vs. Reverse Voltage
Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 5. Typical Reverse Recovery Figure 6. Forward Current Derating Curve
Current vs. di/dt
012345
1
10
100
75oC
TC = 125oC
Forward Current, IF [A]
Forward Voltage, VF [V]
25oC
200
100 200 300 400 500 600
0.01
0.1
1
10
100
1000
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Current , IR [µA]
Reverse Voltage, VR [V]
10
0.1 1 10 100
0
70
140
210
280
350 Typical Capac itance
at 0V = 271 pF
Capacitances , Cj [pF]
Rev e rse V olta ge, V R [V] 100 150 200 250 300
20
40
60
80
100
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Recovery Time, trr [ns]
di/dt [A/µs]
25 50 75 100 125 150
0
10
20
30
40
50
60
70
Average Forward Current, IF(AV) [A]
Case temperature, TC [oC]
100 150 200 250 300
0
2
4
6
8
10
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Recovery Current, Irr [A]
di/d t [A/µs]
FFP30S60S Rev.C0 4
FFP30S60S
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Normalized Maximum Transient Thermal Impedance
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01 10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUT Y FA C TOR : D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
5
FFP30S60S Rev.C0
FFP30S60S
www.fairchildsemi.com
Mechanical Dimensions
Dimensions in Millimeters
TO-220-2L
FFP30S60S
FFP30S60S Rev.C0 www.fairchildsemi.com6
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