NTE3027
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3027 Infrared Emitting Diode is a high intensity diode using AlGaAs/GaAs technology molded
in a blue transparent plastic standard T-1 3/4 (5mm) package. This device is spectrally matched for use
with phototransistor, photodiode and infrared receiver modules.
Features:
DHigh Radiant Intensity
DPeak Wavelength = λP = 940nm
DLow Forward Voltage
DHigh Reliability
Applications:
DFree Air Transmission System
DInfrared Remote Control Units with High Power Requirements
DSmoke Detector
DInfrared Applied Sytem
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, IF
Continuous 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (TA ≤ +25°C), PD210mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Soldering Temperature (Note 2), Tsol +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr -55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg -55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During soldering, 4mm from mold body, 5sec Max.), TL+260°C. . . . . . . . . . . . .
Note 1. Pulse Width = 100μs, Duty Cycle = 1%
Electrical Characteristics: (TA = +25°C unless otherwis specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Radient Intensity IeIF = 50mA 50 60 - mW/sr
IF=100mA, tp = 50μs, tp/T= 0.01 130 - mW/sr
IF = 1A, tp = 100μs, tp/T = 0.01 1400 - mW/sr
Peak Wavelength λpIF = 20mA - 940 - nm
Spectral Bandwidth Δλ IF = 20mA - 50 - nm
Forward Voltage VFIF = 50mA 1.30 1.35 1.50 V
IF=100mA, tp =50μs, tp/T = 0.01 - 1.55 1.85 V
IF = 1A, tp = 100 μs, tp/T = 0.01 - 2.6 4.0 V
Reverse Current IRVR = 5V - - 10 μA
View Angle of Half Power 2 Φ 1/2 IF = 20mA - 45 - deg
Tolerance ±.010 (.254)
.343
(8.7)
.039
(1.0)
.196 (4.98) Dia
.019 (0.5) .078 (2.0) Min
.100 (2.54)
1.102
(28.0)
.228
(5.8)
Dia
Flat Denotes
Cathode
